Intel Corporation

International Business Machines Corporation

Hieu T Ngo

Daniel Cummings

Tai Anh Cao

Khanh Tuan Nguyen

Peter Juergen Klim

Christopher McCall Durham

Mohammed Hasan Taufique

Shantanu Ganguly

Daniel J Cummings

Described is an apparatus comprising a plurality of memory arrays, local write assist logic units, and read/write local column multiplexers coupled together in a group such that area occupied by the local write assist logic units and the read/write local column multiplexers in the group is smaller than it would be when global write assist logic units and the read/write global column multiplexers are used. Described is a dual input level-shifter with integrated latch. Described is an apparatus which comprises: a write assist pulse generator operating on a first power supply; one or more pull-up devices coupled to the write assist pulse generator, the one or more pull-up devices operating on a second power supply different from the first power supply; and an output node to provide power supply to a memory cell.

SRAM bit-line and write assist apparatus and method for lowering dynamic power and peak current, and a dual input level-shifter

Embodiments of an apparatus and method to improve power delivery including a pre-charge circuit that may include a first voltage supply rail configured to provide a first voltage amount to perform a first phase of a pre-charge of a bit line and a second voltage supply rail configured to provide a second voltage amount to perform a second phase of the pre-charge of the bit line are described herein. In embodiments, the pre-charge circuit may be a pre charge circuit for a static random-access memory (SRAM) memory cell.

Apparatus and method for improving power delivery in a memory, such as, a random access memory

The present invention provides a method and system for providing observability of memory address access for self-timed cache designs. A system according to the present invention for determining which memory location has been accessed in a self-timed cache comprises a content addressable memory; a secondary memory coupled to the content addressable memory, wherein the secondary memory includes at least one memory location which may be selected by the content addressable memory based upon a self-timed cache access. The system further includes a test circuitry coupled to the content addressable memory, wherein the test circuitry stores a pointer which points to a selected memory location in response to the self-timed cache access of the secondary memory.

Method and system for determining which memory locations have been

An exclusive OR circuit (10) includes an input stage (11) and a control arrangement (12,13) for controlling an exclusive OR logical evaluation. The control arrangement includes a pre-charge stage (12) which responds to a first level clock signal to enable the desired exclusive OR logical evaluation. The input stage (11) is connected to receive a first input signal and a second input signal and is also connected to an evaluation node (23). When the logic state of one input signal is unequal to the logic state of the other input signal, the input stage (11) couples the evaluation node (23) to ground. An output stage (13) of the control arrangement inverts the signal at an internal node (24) to produce the output from the exclusive OR circuit. A pre-charge stage (12) couples the internal node (24) to the evaluation node (23) only in response to a 'high' clock signal. Coupling the internal node (24) and evaluation node (23) allows the internal node to follow the state of the evaluation node and produce the desired exclusive OR evaluation through the output stage (13).

Clock controlled exclusive or circuit

A voltage converter circuit (10) includes a primary P-type FET (20) having its source-drain conduction path connected between an input (22) and a first output node (23). An N-type FET (21) is connected in parallel with the primary P-type device (20) between the input (22) and first output node (23). The gate electrode of the primary P-type device (20) is connected to the first output node (23) while the gate electrode of the N-type device (21) is connected to a second voltage supply at the voltage level of a desired second voltage signal. A first digital signal at a first voltage level is applied to the input (22). The voltage produced at the first output node (23) equals the desired second voltage level and comprises the input signal voltage reduced by the threshold voltage of the primary P-type device (20). One or more additional P-type devices (40) may be connected in series with the primary P-type device (20) to reduce the output voltage level further.

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Austin, TX, United States of America

Hieu T Ngo