Hitachi, Ltd.

Hitachi-high-technologies Corporation

Other

Pentax Corporation

Japan As Represented by Director General of National Research Institute for Metals

Hideyuki Yamamoto

Junichi Tanaka

Akira Kagoshima

Shoji Ikuhara

Hiroyuki Kitsunai

Toshio Masuda

Kazue Takahashi

Daisuke Shiraishi

Tatehito Usui

Seiichiro Kanno

Ryoji Nishio

Mitsuru Suehiro

Hiromichi Enami

Motohiko Yoshigai

Kenji Tamaki

Go Miya

Hiroshi Kanekiyo

Natsuyo Morioka

Tetsuo Ono

Tetsunori Kaji

Takashi Fujii

Tsutomu Tetsuka

Saburou Kanai

Katsumi Setoguchi

Takamitsu Sasaki

Ken Yoshioka

Takeshi Ishizaki

Hironobu Kawahara

Shigeru Miyake

Kazuyuki Ikenaga

Hideki Kihara

Katsuya Watanabe

Muneo Furuse

Terumi Nakamura

Noboru Saito

Kazuo Hiraoka

Koichiro Otani

Toru Takahashi

Hiroyuki Nakano

Koji Nakamura

Manabu Edamura

Nobuo Tsumaki

Takeshi Arai

Ichiro Sasaki

Chiaki Shiga

Yoshimi Torii

Xianchun Xu

An apparatus predicts time-series variations in resource usage for logical structures for a future time period (a schedule period) on the basis of a history representing the history of resource usage by the logical structures. The apparatus attempts to select a plurality of arrangement candidates for which resource usage in each of a plurality of physical machines is equal to or less than a criterion for each of a plurality of time segments comprising the schedule period. The apparatus computes a migration cost of migrating the logical structures between physical machines for an arrangement according to a holistic arrangement plan for each of a plurality of holistic arrangement plans. Each of the plurality of holistic arrangement plans is a combination of a plurality of selected arrangement candidates corresponding to each of the plurality of time segments.

Comparing resource costs between allocation plans in a load balance apparatus

A plasma processing apparatus includes a vacuum vessel with a sample stage having a mounting surface disposed in a process chamber, and a plate having substantially uniform thickness and electric power applied thereto constituting a ceiling of the chamber. The plate is disposed opposite to and substantially parallel with the sample stage so as to cover the whole area of the stage mounting surface and has a through-hole therein. An optical transmitter with a diameter larger than a diameter of the though-hole is disposed inside of the vacuum vessel and has an end face at a position above and spaced a small distance a back surface of the plate so as to receive light from the chamber via the through-hole. The optical transmitter is independently detachable with respect to the back surface of the plate.

Plasma processing system and apparatus and a sample processing method

A plasma processing method for processing a sample by applying a high-frequency bias power periodically for each one period (T) which is divided along a time axis into a first sub-period (T) for which feedback control of a CD gain is executed, a second sub-period (T) for which feedback control of a select ratio is executed, and a third sub-period (T) for which feedback control of both the CD gain and the select ratio are executed. The applied power is set at a large value in the first sub-period, and a duty ratio T/T is controlled in accordance with the CD gain. A plurality of samples are processed with preset process conditions, and feedback control for each processing unit of the samples is executed in accordance with a processing state of each of the samples so that an average applied power over the one period (T) is constant.

Plasma processing method and plasma processing apparatus

A plasma processing system includes a first unit for plasma-processing a sample based on a recipe for plasma processing, and a second unit for modifying the recipe in accordance with a monitored value obtained during the plasma processing of the sample in the first unit. A next sample is plasma processed in the first unit based on the modified recipe.

Disturbance-free, recipe-controlled plasma processing system and method

A detection technique for detecting foreign material on the surface of a plasma processing apparatus, capable of accurately sucking/extracting and measuring foreign material contained in the measurement object surface is provided. The detection device comprises a gauge head or probe having a gas blow out opening for intermittently blowing a gas of a predetermined pressure to a measurement object surface and a gas suction opening for sucking foreign material discharged by the gas blown out from the gas blow out opening a particle counter having a suction pump for continuously sucking in a predetermined amount of gas from the gas suction opening for counting the number of foreign material particles contained in the gas sucked by the suction pump and a pressure adjustment unit for intermittently supplying gas of a predetermined pressure to the gas blowing out opening.

Device and method for detecting foreign material on the surface of plasma processing apparatus

A method of processing a semiconductor which includes providing a process gas supply unit for supplying a process gas to a sample stand to hold a sample in a process chamber and to the process chamber, successively supplying a plurality of samples of a lot to the process chamber to conduct an intra-lot successive process, predicting, before a lot process is started and according to sensor data detected by a state sensor to detect a state in the process chamber, intra-lot variation patterns of results of the intra-lot successive process, and changing, according to a result of the prediction by the intra-lot variation pattern prediction unit, a process condition applied to a sample of the lot and conducting the lot process.

Method for processing semiconductor

The present invention provides techniques for creation, operation, management, and access control of network-based storage services. Specific embodiments provide improved efficiency of the service management tasks used for designing, operating and accounting the robust and profitable network services, for example. In representative embodiments, techniques for constructing integrated network and storage services are provided. In a specific embodiment, the service comprises of three major service components: virtual private networks (VPN), application servers and storage area networks (SAN). Each of these service components has its own customer identification information, such as VPN identifier for VPN services, process identifier for application servers and logical unit number (LUN) for storage devices.

Integrated service management system for remote customer support

A plasma processing method for processing a sample by using plasma on a lot unit basis, including: detecting plural kinds of information as monitor data relating to a processing state of the sample, using a plurality of sensors; selecting a detection time range of the monitor data thus detected; converting the monitor data within the selected detection time range into a converted signal; predicting a pattern shape of the sample based on the converted signal; calculating a correction quantity of a processing parameter, for decreasing a deviation between the predicted pattern shape and a standard value; and converting the correction quantity of a processing parameter obtained by the calculating operation when a kind of a next sample of a next lot is different from the sample, thereby to use a converted correction quantity of the processing parameter for a processing of the next sample.

Process monitoring device for sample processing apparatus and control method of sample processing apparatus

A semiconductor processing apparatus for processing a semiconductor wafer includes a plurality of sensors for monitoring a processing state, a processing result input unit, a model equation generation unit to generate a model equation for predicting a processing result, a processing result prediction unit which predicts a processing result, and a process recipe control unit. Further, a system is provided which comprises the model equation generation unit is provided at a remote location, and transmits the generated prediction model equation to the semiconductor processing apparatus through a network to control the processing condition of the semiconductor processing apparatus by the process recipe control unit.

System for monitoring and controlling a semiconductor manufacturing apparatus using prediction model equation

The invention provides a means for estimating a self-bias voltage under arbitrary etching conditions via a simple procedure. The present invention provides a method for measuring self-bias voltage of an etching apparatus comprising an electrostatic chuck mechanismandfor chucking a sample, a mechanismandfor supplying cooling gasto a rear surface of the sampleand controlling the pressure thereof, and a means for measuring the relative force of electrostatic chuck of the sample based on the rear surface pressure control status of the samplebeing processed, wherein the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control of the samplewhen high-frequency bias power is applied to the samplebeing processed, and the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control status of the sample when high-frequency bias power is not applied to the sample being processed, and the self-bias voltage is estimated using the acquired forces of electrostatic chuck and the electrostatic chuck voltages corresponding to the two statuses.

Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus

An AF control apparatus for a zoom lens system includes a movable lens group serving as a zooming lens group and a focusing lens group in the zoom lens system; a focusing table which stores focusing data for the movable lens group; a zooming table which stores zooming data for the movable lens group, the zooming table having different data from the focusing table; and a driving device for moving the movable lens group in an optical axis direction of the zoom lens system according to data stored in the focusing table and the zooming table.

AF control apparatus for zoom lens system

A method for operating a semiconductor processing apparatus that plasma-processes a semiconductor wafer mounted on a stage placed in a container using a plasma generated therein. The method includes setting a temperature of the semiconductor wafer, and controlling an operation of the semiconductor processing apparatus based on information about the temperature of the semiconductor wafer which is set.

Method for operating a semiconductor processing apparatus

A plasma processing apparatus having a sample stage disposed inside a vacuum chamber and a plate member disposed opposing to a sample which is placed on the sample stage and supplied with electric power. The sample is processed using a plasma generated between the sample stage and the plate member and a measuring port is disposed at a back side of the plate member. The measuring port includes an optical transmitter which receives light from a surface of the sample, and a seal which vacuum-seals between an atmospheric side and vacuum side of the vacuum chamber.

A particle control device and a particle control method are capable of controlling the occurrences of particles in a vacuum reactor. The particle control device is used in a vacuum processing apparatus having a vacuum reactor, a gas delivery unit for supplying processing gases to the vacuum reactor, and a sample table for supporting a sample in the vacuum reactor, wherein the apparatus subjects the sample to vacuum processing. The particle control device detects particles floating inside the vacuum reactor; generates apparatus condition data indicating a condition of the vacuum processing apparatus; and determines a component which is high in a particle occurrence probability based on detected particle data and apparatus condition data, thereby enabling display of the component selected as the particle source.

Particle control device and particle control method for vacuum processing apparatus

A plasma processing apparatus for processing a sample within a vacuum vessel, including: a plurality of sensors for detecting plural kinds of information relating to a processing state of the sample as monitor data; data selecting means for selecting a detection time range of the monitor data thus detected which is used for monitoring the plasma processing apparatus; a signal filter for converting the monitor data within the selected detection time range into an effective signal; a model expression unit for generating a predicted value of a patterned physical-shape of a sample based on the effective signal; and a display screen for displaying the patterned physical-shape predicted value; wherein the display screen displays the patterned physical-shape predicted value without measuring a patterned shape after processing of the sample.

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Kudamatsu, Japan

Hideyuki Yamamoto