Other

National Institute of Advanced Industrial Science and Technology

Agency of Industrial Science and Technology Ministry of International

Agency of Industrial Science & Technology, Ministry of International Trade & Industry

Hideyuki Watanabe

Daisuke Takeuchi

Hideyo Okushi

Koji Kajimura

Masahiko Ogura

Toshiharu Makino

Naoto Kobayashi

Satoshi Yamasaki

Hiromitsu Kato

Norio Tokuda

Masataka Hasegawa

Shinichi Shikata

Hideyo Ookushi

Sadanori Yamanaka

Sung-Gi Ri

Provided is a light emitting device formed of an indirect transition semiconductor configured from a semiconductor material having high exciton binding energy, wherein an active layer of the indirect transition semiconductor or an active region by a pn junction is formed, the light emitting device has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.

High efficiency indirect transition semiconductor ultraviolet light emitting device

A diamond semiconductor has an exciton light-emission intensity characteristic that varies nonlinearly.

Diamond semiconductor and diamond semiconductor light-emitting device that uses the semiconductor

A diamond pn junction diode includes a p-type diamond thin-film layer formed on a substrate and an n-type diamond thin-film layer formed by forming a high-quality undoped diamond thin-film layer on the p-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer, or alternatively includes an n-type diamond thin-film layer formed on a substrate and a p-type diamond thin-film layer formed by forming a high-quality undoped diamond thin-film layer on the n-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer. A method of fabricating a diamond pn junction diode includes the steps of forming a p-type diamond thin-film layer on a substrate, forming a high-quality undoped diamond thin-film layer on the p-type diamond thin-film layer, and making the high-quality undoped diamond thin-film layer an n-type diamond thin-film layer by ion implantation of an impurity, or alternatively includes the steps of forming an n-type diamond thin-film layer on a substrate, forming a high-quality undoped diamond thin-film layer on the n-type diamond thin-film layer, and making the high-quality undoped diamond thin-film layer a p-type diamond thin-film layer by ion implantation of an impurity.

Diamond pn junction diode and method for the fabrication thereof

A method for producing homoepitaxial diamond thin film is provided which includes a step of effecting plasma assisted CVD with the carbon source concentration of a mixed gas of a carbon source and hydrogen set to a first low level for depositing a high-quality homoepitaxial diamond thin film on a substrate at a low film forming rate and a step of thereafter effecting the plasma assisted CVD with said carbon source concentration set to a second level higher than the first level.

Method for producing homoepitaxial diamond thin films

Growing community of inventors

Ibaraki, Japan

Hideyuki Watanabe