Mitsubishi Denki Kabushiki Kaisha

Hideyuki Wakada

Hiroshi Komurasaki

Hisayasu Satoh

Kazuya Yamamoto

Naoyuki Kato

A semiconductor device is arranged by having a shield/planarization portion including a silicided active region formed on the main surface of a semiconductor substrate and a non-active region provided by device-isolation on the surface, and a metal layer such as a pad, wiring layer or inductor having a predetermined pattern, formed on an interlayer insulation film formed on the above shield/planarization portion. Just under the metal layer is disposed the shield/planarization portion in which the area ratio of the active region to the non-active region is given in a predetermined proportion and the active region is electrically grounded.

Semiconductor integrated circuit device

In a variable frequency divider formed of a latch train, a frequency division ratio is set through selective invalidating a feedback signal to a first stage latch from the last stage latch. A size of MOS (metal-insulator-semiconductor) transistors for switching the division ratio is made larger than that of other MOS transistors in differential stages in the last stage latch circuit. Further, differential signals are transmitted as feedback signals to the first stage latch circuit. A F/(F&plus;1) prescaler which operates stably with a low current consumption under a low power supply voltage condition is implemented.

Growing community of inventors

Tokyo, Japan

Hideyuki Wakada