Kabushiki Kaisha Toshiba

Alpad Corporation

Samsung Electronics Co., Ltd.

Hideyuki Tomizawa

Yoshiaki Sugizaki

Hideto Furuyama

Yosuke Akimoto

Miyoko Shimada

Akihiro Kojima

Akira Fujimoto

Naofumi Nakamura

Tetsuro Komatsu

Hideko Mukaida

Gen Watari

Masanobu Ando

Naoya Ushiyama

Miyuki Shimojuku

Noriaki Matsunaga

Masako Kodera

Akiko Yuzawa

Shinji Nunotani

Mitsuyoshi Endo

Tadayoshi Watanabe

Shiro Mishima

Hiroko Miki

Kazuo Fujimura

Shinya Ito

Akhiro Kojima

According to one embodiment, a sensor module system includes a first sensor module including a probe molecule that responds to light irradiation with charge, and a second sensor module including no probe molecule. A first flow path is connected to one end side of the first sensor module, and a second flow path is connected to the other end side. A third flow path branching from the first flow path is connected to one end side of the second sensor module, and a fourth flow path joining the first flow path is connected to the other end side. A valve capable of opening and closing the third flow path is connected to a junction of the first flow path and the third flow path.

Sensor module system

A method for inspecting probe molecule includes evaluating the formation of the probe molecule at the surface of the graphene by comparing an intensity ratio a1/b1, and an intensity ratio a2/b2. The intensity a1 is of a peak of the first Raman spectrum having a peak top positioned in a first band of not less than 1200 cmand not more than 1500 cm. The intensity b1 is of a peak of the first Raman spectrum having a peak top positioned in a second band of not less than 1510 cmand not more than 1800 cm. The intensity a2 is of a peak of the second Raman spectrum having a peak top positioned in the first band. The intensity b2 is of a peak of the second Raman spectrum having a peak top positioned in the second band.

Method for inspecting probe molecule

According to one embodiment, a sensor includes a base body, a first movable structure body, and a first fixed structure body. The first movable structure body includes first movable electrodes. A direction from the base body toward the first movable electrodes is aligned with a first direction. A distance between the base body and the plurality of first movable electrodes is changeable. A direction from one of the first movable electrodes toward an other one of the first movable electrodes is aligned with a second direction crossing the first direction. The first fixed structure body includes first fixed electrodes. One of the first fixed electrodes is between the one of the first movable electrodes and the other one of the first movable electrodes. A first movable electrode length along the first direction is shorter than a first fixed electrode length along the first direction.

Sensor with fixed and movble components

According to one embodiment, a sensor includes a base body, a first structure body, and a second structure body. The first structure body includes a first fixed portion, a first conductive portion, and first electrodes. The first fixed portion is fixed to the base body. The first conductive portion is held by the first fixed portion. The first conductive portion is separated from the base body in a first direction. The first electrodes are held by the first conductive portion. A distance between the base body and the first electrodes is changeable. The second structure body includes a second conductive portion and second electrodes. The second conductive portion is fixed to the base body. The second electrodes are held by the second conductive portion. One of the second electrodes is between the one of the first electrodes and the other one of the first electrodes.

Sensor

According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The n-side electrode includes a first portion, a second portion, and a third portion. The first portion is provided on a side face of the first semiconductor layer. The second portion is provided in the first n-side region. The third portion overlaps the p-side electrode via the insulating film and connects the first portion and the second portion to each other.

Semiconductor light-emitting device

The semiconductor layer has a first surface, a second surface provided on opposite side from the first surface, and a third surface provided on the opposite side from the first surface with a step difference with respect to the second surface. The semiconductor layer includes a light emitting layer between the first surface and the third surface. The first electrode is in contact with the second surface. The second electrode is provided in a plane of the third surface. The second electrode includes a contact part in contact with the third surface and an end part not in contact with the third surface. The second electrode contains silver. The insulating film is provided between the end part of the second electrode and the third surface. A semiconductor light emitting device having a high light extraction efficiency is provided.

Semiconductor light emitting device

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a sealing member configured to cover a lower surface of the semiconductor layer and a side surface of the semiconductor layer to protrude to be higher than an upper surface of the semiconductor layer at a side of the semiconductor layer, a fluorescer layer provided above the semiconductor layer and the sealing member, and an insulating film provided between the sealing member and the semiconductor layer and between the sealing member and the fluorescer layer. A corner of a protruding portion of the sealing member is rounded.

Semiconductor light emitting device and method for manufacturing same

According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a light emitting layer; and a phosphor layer provided on the semiconductor layer. The phosphor layer includes a plurality of phosphors, &#x2212;0.05&#x3c;A&#xd7;(AR)+B&#xd7;(Np)+C&#x3c;0.05 being satisfied for &#x2212;0.149055&#x2212;(3&#xd7;0.011797)&#x2266;constant A&#x2266;&#x2212;0.149055+(3&#xd7;0.011797), &#x2212;0.000192&#x2212;(3&#xd7;0.00002461)&#x2266;constant B&#x2266;&#x2212;0.000192+(3&#xd7;0.00002461), and 0.0818492&#x2212;(3&#xd7;0.005708)&#x2266;constant C&#x2266;0.0818492+(3&#xd7;0.005708). AR is a ratio of a thickness of the phosphor layer to a width of the phosphor layer, and Np is a number of the plurality of phosphors.

According to one embodiment, the n-side electrode has a corner and a plurality of straight portions. The plurality of straight portions extends in different directions. The corner connects the plurality of straight portions. A first insulating film is provided between the semiconductor layer and the corner of the n-side electrode. The corner is not in contact with the semiconductor layer. The straight portions of the n-side electrode are in contact with the semiconductor layer.

According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface; an n-side electrode including a first n-side electrode and a second n-side electrode; a first contact unit; a second contact unit; an n-side interconnect unit; a p-side electrode; and an insulating film. The insulating film includes a first insulating portion, a second insulating portion, a third insulating portion, and a fourth insulating portion.

A semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, an insulating film, a p-side interconnection section, an n-side interconnection section, a phosphor layer, and a metal film. The semiconductor layer is formed on a substrate which is then removed. The p-side interconnection section is provided on the insulating film and electrically connected to the p-side electrode. The n-side interconnection section is provided on the insulating film and electrically connected to the n-side electrode. The phosphor layer is provided on the first surface and includes a step portion continued to the side surface of the semiconductor layer. The metal film is provided on the side surface of the semiconductor layer and a side surface of the step portion of the phosphor layer.

Semiconductor light emitting device and method for manufacturing the same

A semiconductor light emitting device includes a semiconductor layer, a p-side and an n-side interconnect portions, a fluorescent substance layer and a transparent layer. The semiconductor layer has a first major surface, a second major surface, and a first side surface, the semiconductor layer including a light emitting layer. The p-side and n-side interconnect portions are electrically connected to the semiconductor layer. The fluorescent substance layer is provided on the first major surface side. The transparent layer is provided between the semiconductor layer and the fluorescent substance layer, and has a second side surface. The device further includes an insulating film covering the first side surface and the second side surface, and a reflecting member covering the first side surface and the second side surface via the insulating film.

Semiconductor light emitting device having a fluorescent substance layer

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a fluorescent material layer and a scattering layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The p-side electrode and the n-side electrode are provided on the semiconductor layer on a side of the second surface. The fluorescent material layer is provided on a side of the first surface and includes a plurality of fluorescent materials and a first bonding material. The first bonding material integrates the fluorescent materials. The scattering layer is provided on the fluorescent material layer and includes scattering materials and a second bonding material. The scattering materials are configured to scatter radiated light of the light emitting layer. The second bonding material integrates the scattering materials.

Growing community of inventors

Kanagawa-ken, Japan

Hideyuki Tomizawa