Jx Nippon Mining Metals Corporation

Mitsubishi Petrochemical Company Limited

Other

Nippon Mining & Metals Co., Ltd.

Nikko Materials Company, Limited

Jx Metals Corporation

Asmo Co., Ltd.

Huls Aktiengesellschaft

Jx Advanced Metals Corporation

Toyota Jidosha Kabushiki Kiasha

Hideyuki Takahashi

Yasuhiro Shinkai

Masataka Yahagi

Shigeharu Furusawa

Michihiro Sato

Nobuyuki Sato

Tetsuya Niino

Noritaka Kunimaru

Hikaru Sugi

Takeyoshi Nishio

Yuichiro Shindo

Akihisa Inoue

Kouichi Takemoto

Yuichi Shirota

Hisamichi Kimura

Teruhiko Kameoka

Kazutoshi Kuwayama

Yasuhiro Yamakoshi

Toshihiko Muraki

Nobuhiro Shibuya

Tetsuya Takechi

Karl Trukenbrod

Tokuhisa Takeuchi

Atsushi Nakamura

Mineo Yamaguchi

Tomohiko Takahama

Yoshimasa Koido

Tadamichi Aoki

Nobuhiko Fuga

Yasushi Ueda

Hajime Momoi

Hideaki Fukuyo

Yoshikazu Higaki

Kunio Uchimura

Masakatu Shimizu

Kohji Kato

Shohei Suzuki

Kazuhiro Seki

Tateo Ohhashi

Susumu Hamanishi

Yoshiyuki Matsuoka

Hirotaka Takano

Ryoichi Hirogohri

Hirohisa Ajima

Kenichiro Sasamori

Takahisa Matue

A molybdenum oxychloride or a tungsten oxychloride, wherein the molybdenum oxychloride or the tungsten oxychloride has a moisture content of less than 1 wt %. A method of producing a molybdenum oxychloride or a tungsten oxychloride, wherein a molybdenum oxide or a tungsten oxide as a raw material is subject to dehydration treatment at 400° C. or higher and 800° C. or less, and the raw material that underwent dehydration treatment is thereafter reacted with a chlorine gas to synthesize a molybdenum oxychloride or a tungsten oxychloride. An object of the present invention is to provide a molybdenum oxychloride or a tungsten oxychloride having a low moisture content, as well as a production method thereof.

Molybdenum oxychloride or tungsten oxychloride and production method thereof

Provided is a method of producing a high purity molybdenum oxychloride by including means of sublimating and reaggregating a raw material molybdenum oxychloride in a reduced-pressure atmosphere, or means of retaining a gaseous raw material molybdenum oxychloride, which was synthesized in a vapor phase, in a certain temperature range, and thereby growing crystals to obtain a higher purity molybdenum oxychloride having a high bulk density and high hygroscopicity resistance.

Method of synthesizing molybdenum oxychloride by reacting molybdenum oxide powder and chlorine gas and growing crystals of molybdenum oxychloride from the gaseous raw material

An Sb—Te-based alloy sintered compact sputtering target having Sb and Te as main components and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles is provided. An average grain size of the Sb—Te-based alloy particles is 3 μm or less and a standard deviation thereof is less than 1.00. An average grain size of the C or B particles is 0.5 μm or less and a standard deviation thereof is less than 0.20. When the average grain size of the Sb—Te-based alloy particles is X and the average grain size of the carbon or boron particles is Y, Y/X is within a range of 0.1 to 0.5. This provides an improved Sb—Te-based alloy sputtering target that inhibits generation of cracks in the sintered target and prevents generation of arcing during sputtering.

Sb—Te-based alloy sintered compact sputtering target

Provided are high purity tungsten pentachloride, and a method for obtaining such high purity tungsten pentachloride at a high yield and in an efficient manner. Tungsten pentachloride in which a total content of metal impurities excluding Sb, Ti, and As is less than 10 wtppm is obtained by uniformly mixing one or more types of reducing agents selected from Sb, Ti, and As and tungsten hexachloride at a molar ratio of 1.0:2.0 to 1.0:5.0 (reducing agent/WClratio) in an inert atmosphere to obtain a mixture, heating and reducing the mixture for 1 to 100 hours in a temperature range in which a chloride of tungsten and the reducing agent becomes a liquid phase to obtain a reduced product, heating the reduced product for 1 to 100 hours at 100 Pa or less and in a temperature range of 90 to 130&#xb0; C., and performing reduced-pressure distillation thereto to obtain a reduced-pressure distilled product, heating and sublimating the reduced-pressure distilled product for 1 to 100 hours at 100 Pa or less and in a temperature range of 130 to 170&#xb0; C., and performing sublimation purification of achieving precipitation at 70 to 120&#xb0; C.

High purity tungsten pentachloride and production method thereof

Provided is anhydrous nickel chloride having a total content of impurity elements other than gas components of less than 10 wt. ppm; each content of boron, sodium, magnesium, aluminum, potassium, calcium, titanium, chromium, manganese, iron, copper, zinc, arsenic, silver, cadmium, indium, tin, thallium and lead of less than 1 wt. ppm, which can be produced by a method for producing anhydrous nickel chloride comprising the steps of carrying out ion exchange membrane electrolysis in an anolyte and a catholyte separated by an anion exchange membrane using raw metal nickel as an anode, a conductive material as a cathode and high purity hydrochloric acid as an electrolytic solution, to obtain a nickel chloride solution as the anolyte; concentrating the obtained nickel chloride solution by heating it at 80 to 100&#xb0; C. under atmospheric pressure to obtain a concentrated nickel chloride solution; and dehydrating and drying the resulting concentrated nickel chloride solution by heating it at 180 to 220&#xb0; C. under atmospheric pressure to obtain anhydrous nickel chloride.

Anhydrous nickel chloride and method for producing the same

The purpose of the present invention is to safely synthesize high purity tungsten pentachloride at a higher yield and at a higher purity than in prior art. This method for producing tungsten pentachloride includes: a step of mixing a reducing agent selected from the group consisting of Bi, Hg, Sb, Ti, Al, P, and As with tungsten hexachloride uniformly in an inert atmosphere with a molar ratio of the tungsten hexachloride to the reducing agent being 2.8:1.0 to 3.2:1.0 to obtain a mixture; a step of heating the mixture of the reducing agent and the tungsten hexachloride to 80 to 210&#xb0; C. at 13 Pa or lower and reducing the same; a step of heating the reduced product of the mixture of the reducing agent and the tungsten hexachloride to 120 to 290&#xb0; C. at 66 Pa or lower and vacuum distilling the same to remove impurities; and a step of heating the reduced product from which impurities have been removed by the vacuum distillation to 140 to 350&#xb0; C. at 13 Pa or lower and purifying the same by sublimation to obtain the tungsten pentachloride.

High purity tungsten pentachloride and method for synthesizing same

Provided is a target of sintered compact essentially consisting of an element of (A), an element of (B) and an element of (C) below, wherein the thermal conductivity is 2.5 W/mK or more and the oxygen concentration is 5000 ppm or more:

Target of sintered compact, and method of producing the sintered compact

Provided is an Sb&#x2014;Te base alloy sinter sputtering target having Sb and Te as its primary component and comprising a structure in which Sb&#x2014;Te base alloy particles are surrounded by fine carbon or boron particles; wherein, if the mean diameter of the Sb&#x2014;Te base alloy particles is X and the particle size of carbon or boron is Y, Y/X is within the range of 1/10 to 1/10000. The present invention seeks to improve the Sb&#x2014;Te base alloy sputtering target structure, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing during the sputtering process.

Sb-Te base alloy sinter sputtering target

A sintered sputtering target having a structure where the average crystallize size is 1 nm to 50 nm and preferably comprises an alloy having a three-component system or greater containing, as its primary component, at least one element selected from among Zr, Pd, Cu, Co, Fe, Ti, Mg, Sr, Y, Nb, Mo, Tc, Ru, Rh, Ag, Cd, In, Sn, Sb, Te and a rare earth metal. This target is manufactured by sintering atomized powder. Thereby provided is a high density target having an extremely fine and uniform structure manufactured with the sintering method, in place of a conventional bulk metal glass produced by the quenching of a molten metal, which has a coarse crystal structure and requires a high cost for its production.

Sputtering target and method for production thereof

Provided is Sb&#x2014;Te alloy powder for sintering in which the maximum grain size of the powder obtained by subjecting gas atomized powder of an Sb&#x2014;Te alloy to mechanical pulverization is 90 &#x3bc;m or less, and a sintered compact sputtering target obtained by sintering this powder. Further provided is a manufacturing method of Sb&#x2014;Te alloy powder for a sintered compact sputtering target including the steps of dissolving an Sb&#x2014;Te alloy, thereafter subjecting this to gas atomization to obtain atomized powder, and further subjecting this to mechanical pulverization in an inert atmosphere without any atmospheric exposure so as to manufacture powder having a maximum grain size of 90 &#x3bc;m or less and reduced oxygen content. Thus, the Sb&#x2014;Te alloy sputtering target structure can be uniformalized and refined, generation of cracks in the sintered target can be inhibited, and generation of arcing during sputtering can be inhibited. Further, surface ruggedness caused by sputter erosion can be reduced in order to obtain a high quality Sb&#x2014;Te alloy sputtering target.

Sb-Te alloy powder for sintering, sintered compact sputtering target obtained by sintering said powder, and manufacturing method of Sb-Te alloy powder for sintering

Provided is an Sb&#x2014;Te alloy sintered compact target using atomized powder consisting of substantially spherical particles of an Sb&#x2014;Te alloy, wherein the spherical atomized powder consists of particles that were crushed and flattened, and the flattened particles exhibiting a ratio (flatness ratio) of short axis and long axis of 0.6 or less occupy 50% or more of the overall particles. With this Sb&#x2014;Te alloy sintered compact target, particles exhibiting a long axis orientation aligned within &#xb1;45&#xb0; in a direction that is parallel to the target surface occupy 60% or more of the overall particles. In addition, the oxygen concentration in this Sb&#x2014;Te alloy sintered compact target is 1500 wtppm or less. Thus, the Sb&#x2014;Te alloy sputtering target structure can be uniformalized and refined, generation of cracks in the sintered target can be inhibited, and generation of arcing during sputtering can be inhibited. Further, surface ruggedness caused by sputter erosion can be reduced in order to obtain a high quality Sb&#x2014;Te alloy sputtering target.

Sb-Te alloy sintered compact target and manufacturing method thereof

Provided is an Sb&#x2014;Te alloy sintered compact sputtering target having at least Sb or Te as its primary component, wherein surface roughness Ra is 0.4 &#x3bc;m or less, purity excluding gas components is 4N or more, content of gas components as impurities is 1500 ppm or less, and average crystal grain size is 50 &#x3bc;m or less. With this Sb&#x2014;Te alloy sintered compact sputtering target, the density of defects having a maximum length of 10 &#x3bc;m or greater arising in a surface finish by machining is 80 or less in an 800 &#x3bc;m square. Thus, the Sb&#x2014;Te alloy sputtering target structure can be uniformalized and refined, generation of cracks in the sintered target can be inhibited, and generation of arcing during sputtering can be inhibited. Further, surface ruggedness caused by sputter erosion can be reduced in order to obtain a high quality Sb&#x2014;Te alloy sputtering target.

Sb-Te alloy sintered compact sputtering target

Provided is a sputtering target, backing plate or apparatus inside a sputtering device in which an electrical discharge machining mark is formed on the face to which unwanted films during sputtering are deposited, and the electrical discharge machining mark is formed from numerous inclined protrusions having a depression angle of less than 90&#xb0;. When necessary, chemical etching is further performed to the portions subject to such electrical discharge machining. Thereby, the separation and flying of deposits arising from the face to which unwanted films of the target, backing plate and apparatus inside the sputtering device are deposited can be prevented.

Sputtering target producing very few particles, backing plate or apparatus within sputtering device and roughening method by electric discharge machining

A titanium sputtering target that contains a concentration of oxygen in an amount of 20 ppm or less and has a maximum grain diameter of 20 &mgr;m or less. The target permits a sputtering operation to be accomplished substantially free from the formation of particles or the occurrence of an abnormal discharge phenomenon. In addition, the target contains a reduced amount of contaminants and is soft.

Titanium target for sputtering

A recording-medium transfer device having a anti-rattle construction is provided. A transfer roller of the recording-medium transfer device is arranged above a chassis to be perpendicular to a direction X of transferring recording medium. The transfer roller has a structure in which a shaft is inserted in rolling member made of a material having flexibility. Projecting portions and are formed on the chassis to oppose to both ends of the rolling member. In both ends of the rolling member, clearances are respectively formed to permit the deformation produced by its abutment with the projecting portions and . In the process for inserting the disc, the projecting portions and are moved away from the transfer roller . Upon receiving a driving force from a driving motor and gears to , the rolling member of the transfer roller is rotated keeping in contact with the disc so as to transfer the disc toward a clamping position. When the transfer of the recording medium is completed, both ends of the rolling member press on the projecting portions and , thereby the transfer roller is fixed to the chassis so as to prevent chatter due to outside vibration from occurring.

Recording-medium transfer device

Growing community of inventors

Ibaraki, Japan

Hideyuki Takahashi