Kabushiki Kaisha Toshiba

Takeda Pharmaceutical Company Limited

Kabuhsiki Kaisha Toshiba

Hideyuki Sugiyama

Yoshiaki Saito

Tomoaki Inokuchi

Mizue Ishikawa

Hiroaki Yoda

Yuichi Ohsawa

Satoshi Shirotori

Takao Marukame

Mariko Shimizu

Altansargai Buyandalai

Tetsufumi Tanamoto

Naoharu Shimomura

Katsuhiko Koui

Masahiro Ito

Kazutaka Ikegami

Hidekazu Tokuhara

Tomohiro Okawa

Keiko Kakegawa

Hironobu Maezaki

Shuhei Ikeda

Takeshi Yamamoto

Masato Yoshikawa

Yushi Kato

Junya Shirai

Taku Kamei

Jumpei Aida

Shinobu Fujita

Minoru Nakamura

Masataka Murakami

Takahito Kasahara

Jinxing Li

Junsi Wang

Yoshihisa Iwata

Tatsuya Kishi

Masahiko Nakayama

Atsuhiro Kinoshita

Akira Takashima

Tatsuki Koike

Makoto Kamata

Takuto Kojima

Yuya Oguro

Yasuyoshi Arikawa

Minoru Sasaki

Yasutomi Asano

Ayumu Sato

Tohru Miyazaki

Jinichi Yonemori

Yasuhiro Imaeda

Makoto Fushimi

Fumiaki Kikuchi

Tomokazu Kusumoto

Misaki Homma

Akinori Toita

Hironori Kokubo

Osamu Kubo

Yasushi Hattori

Yoshihiko Nakano

Yuzo Kamiguchi

Kosuke Tatsumura

Keiko Abe

Seiichi Suenaga

Hisanori Aikawa

Chika Tanaka

Masato Oda

Yuuzo Kamiguchi

Takashi Yamauchi

Junji Koga

Satoshi Takaya

Susumu Takeda

Zenichi Ikeda

Nobuki Sakauchi

Shinobu Sasaki

Yoshinori Ikeura

Yuichi Motoi

Yuji Nishikimi

Shiinobu Sasaki

Hirotaka Kamitani

Takeshi Yasui

Masako Miyazaki

The present invention provides a heterocyclic compound having a HDAC6 inhibitory action, which is useful for the treatment of central nervous system diseases including neurodegenerative diseases, and the like, and a medicament comprising the compound. The present invention relates to a compound represented by the formula (I): wherein each symbol is as defined in the description, or a salt thereof.

Heterocyclic compound

The present invention provides a heterocyclic compound having a HDAC inhibitory action, which is useful for the treatment of central nervous system diseases including neurodegenerative diseases, and the like, and a medicament comprising the compound. The present invention relates to a compound represented by the formula (I): wherein each symbol is as described in the description, or a salt thereof.

The present invention relates to a compound represented by the formula wherein ring A is a nitrogen-containing heterocycle;ring B is an aromatic ring optionally having substituent(s);ring D is an aromatic ring optionally having substituent(s);L is a group represented by the formula

Nitrogen-containing heterocyclic compound and use of same

The present invention provides a compound having an MAGL inhibitory action, and expected to be useful as an agent for the prophylaxis or treatment of neurodegenerative diseases (e.g., Alzheimer's disease, Parkinson's disease, Huntington's disease, amyotrophic lateral sclerosis, traumatic brain injury, glaucoma, multiple sclerosis etc.), anxiety disorder, pains (e.g., inflammatory pain, cancerous pain, neurogenic pain etc.), epilepsy, depression and the like. The present invention relates to a compound represented by the formula (I): wherein each symbol is as defined in the description, or a salt thereof.

According to one embodiment, a magnetic memory device includes a first insulating region, a first counter insulating region, a first conductive member, and a first magnetic element. The first conductive member is provided between the first insulating region and the first counter insulating region. The first conductive member extends in a first direction crossing a second direction. The second direction is from the first insulating region toward the first counter insulating region. The first magnetic element is provided between the first insulating region and the first counter insulating region. A third direction from the first conductive member toward the first magnetic element crosses a plane including the first and second directions. A portion of a first insulating side surface of the first insulating region opposes the first conductive member. A portion of a first counter insulating side surface of the first counter insulating region opposes the first conductive member.

Magnetic memory device

According to one embodiment, a magnetic memory apparatus includes a first stacked body and a controller. The first stacked body includes a first magnetic layer, a first counter magnetic layer, and a first intermediate layer placed between the first magnetic layer and the first counter magnetic layer. The first intermediate layer is nonmagnetic. The controller is electrically connected to the first magnetic layer and the first counter magnetic layer. The controller is configured to perform a first operation of supplying first pulse current to the first stacked body. The first pulse current includes a first constant-current period. A first electrical resistance value of the first stacked body before the supply of the first pulse current is different from a second electrical resistance value of the first stacked body after the supply of the first pulse current.

Magnetic memory apparatus

A magnetic memory device includes a conductive member, a stacked body, and a controller. The stacked body includes a first magnetic layer, a second magnetic layer provided between the conductive member and the first magnetic layer, and a third magnetic layer stacked with the first magnetic layer and the second magnetic layer. The controller causes a current to flow in the conductive member. The controller causes a current to flow between the conductive member and the stacked body. The controller is able to identify three or more levels of an electrical resistance value of the stacked body.

According to one embodiment, a magnetic memory device includes a conductive member, a first element portion, and a controller. The conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first element portion includes a first element, a first interconnect, and a first circuit. The first element includes a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The first counter magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first counter magnetic layer and the first magnetic layer. The first interconnect is electrically connected to the first magnetic layer. The first circuit is electrically connected to the first interconnect. The first circuit includes a first switch, a first capacitance element, a first parallel switch, and a first parallel capacitance element.

The present invention relates to a compound represented by the formula

According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes first and second regions, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first and second magnetic layers. The second region includes first to third conductive portions. A direction from the first conductive portion toward the second conductive portion is aligned with a third direction. The third direction crosses a plane including the first and second directions. The third conductive portion is between the first and second conductive portions in the third direction.

Magnetic memory device with nonmagnetic layer between two magnetic layers

According to one embodiment, a magnetic memory device includes a conductive layer, first to fourth magnetic layers, first and second intermediate layers, and a controller. The conductive layer includes first, to fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The controller is electrically connected to the first and second portions. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.

A memory device according to an embodiment includes: a plurality of memory cells including a storage element having a first and second terminals; a reference resistor having a third and fourth terminals; a first current source electrically connected to the first terminal of the storage element in the selected memory cell; a second current source electrically connected to the third terminal; and a determination circuit that determines the greater one among a resistance value of a storage element of selected one and a resistance value of the reference resistor, the resistance value of the reference resistor being smaller than a middle value between a mean value of first resistance values obtained from the storage elements in the high-resistance state and a mean value of second resistance values obtained from the storage elements in the low-resistance state, and greater than the mean value of the second resistance values.

Memory device

The present invention provides a compound having an MAGL inhibitory action, and useful as an agent for the prophylaxis or treatment of neurodegenerative diseases (e.g., Alzheimer's disease, Parkinson's disease, Huntington's disease, amyotrophic lateral sclerosis, traumatic brain injury, glaucoma, multiple sclerosis etc.), anxiety disorder, pains (e.g., inflammatory pain, cancerous pain, neurogenic pain etc.), epilepsy, depression and the like. The present invention relates to a compound represented by the formula (I): 

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Kawasaki, Japan

Hideyuki Sugiyama