Kabushiki Kaisha Toshiba

Other

Toshiba Memory Corporation

Tokyo Electric Co.

Hideyuki Nishizawa

Koji Asakawa

Shigeki Hattori

Masaya Terai

Akiko Hirao

Tsukasa Tada

Kazuki Matsumoto

Yoshiaki Fukuzumi

Takayuki Tsukamoto

Satoshi Mikoshiba

Katsutaro Ichihara

Masami Sugiuchi

Reika Ichihara

Yusuke Tanaka

Hirohisa Miyamoto

Hideaki Aochi

Toshihiko Nagase

Masahiro Hosoya

Hiroyuki Fuke

Misako Morota

Tetsuya Hayashi

Ryota Kitagawa

Akira Fujimoto

Satoshi Takayama

Kenji Sano

Tsutomu Nakanishi

Kenji Todori

Mitsunaga Saito

Reiko Yoshimura

Eishi Tsutsumi

Yutaka Majima

Kumi Masunaga

Satoshi Itoh

Sawako Fujioka

Tatsuo Shimizu

Katsuyuki Naito

Yoshihiko Nakano

Kenji Nakamura

Hisashi Yamada

Fumihiko Aiga

Naoko Kihara

Masakazu Yamagiwa

Yoshinori Honguh

Shuzi Hayase

Shuichi Uchikoga

Mitsuharu Endo

Ko Yamada

Taeko I Urano

Tetsuo Okuyama

Urara Ichihara, Legal Representative

Koichi Tsunemi

Yumiko Oyasato

Tatsuo Nomaki

Akiko Watanabe

Yoshimitsu Otaka

A memory device according to an embodiment includes a first conductive layer, a second conductive layer, a variable resistance layer disposed between the first conductive layer and the second conductive layer, and an organic molecular layer disposed between the variable resistance layer and the second conductive layer and containing organic molecules. Each of the organic molecules includes a first fused polycyclic unit having a first HOMO level, a second fused polycyclic unit having a second HOMO level higher in energy than the first HOMO level, and a third fused polycyclic unit disposed between the first fused polycyclic unit and the second fused polycyclic unit. The third fused polycyclic unit has a third HOMO level higher in energy than the first HOMO level and the second HOMO level.

Memory device and rectifier

A semiconductor memory device according to an embodiment includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode, and the organic molecular layer having an organic molecule that includes a molecular structure described by a molecular formula (1): 

Semiconductor memory device

A semiconductor memory device in an embodiment includes a semiconductor layer, a control gate electrode, an organic molecular layer provided between the semiconductor layer and the control gate electrode, and a first insulating layer provided between the organic molecular layer and the semiconductor layer, the first insulating layer having a first layer containing alkyl chains and a second layer containing siloxane, the second layer being provided between the first layer and the organic molecular layer.

Semiconductor memory device and method for manufacturing the same

A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a control gate electrode; and an organic molecular layer, which is provided between the semiconductor layer and the control gate electrode, and has organic molecules including a molecular structure described by a molecular formula (1). 

Nonvolatile semiconductor memory device

An organic molecular memory in an embodiment includes a first conducive layer, a second conductive layer, and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer having an organic molecule, the organic molecule having a linker group bonded to the first conductive layer, a &#x3c0; conjugated chain bonded to the linker group, and a phenyl group bonded to the &#x3c0; conjugated chain opposite to the linker group and facing the second conductive layer, the &#x3c0; conjugated chain including electron-accepting groups or electron-donating groups arranged in line asymmetry with respect to a bonding direction of the &#x3c0; conjugate chain, the phenyl group having substituents R0, R1, R2, R3, and R4 as shown in the following formula, the substituent R0 being an electron-accepting group or an electron-donating group. 

Organic molecular memory

A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.

An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.

According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.

Nonvolatile semiconductor memory device and method for manufacturing same

An organic molecular memory in an embodiment includes a first conductive layer; a second conductive layer; and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer including an organic molecule having an oligophenylene ethynylene backbone, the oligophenylene ethynylene backbone including three or more benzene rings, and the oligophenylene ethynylene backbone including two fluorine atoms added in ortho positions or meta positions of one of the benzene rings other than benzene rings at both ends.

An organic molecular memory in an embodiment includes a first electrode having a first work function; a second electrode having a second work function; and an organic molecular layer provided between the first electrode and the second electrode, the organic molecular layer containing a first organic molecule chemically bonded to the first electrode, the first organic molecule having a resistance-change type molecular chain, and the first organic molecule having a first energy level higher than the first work function, and a second organic molecule chemically bonded to the second electrode and the second organic molecule having a second energy level higher than the second work function and lower than the first energy level.

A nonvolatile semiconductor storage device includes a semiconductor layer, a first insulating film formed on the semiconductor layer, a charge storage layer formed on the first insulating film and having fine metal grains, a second insulating film formed on the charge storage layer, and a gate electrode formed on the second insulating film. During a write operation, a differential voltage is applied across the gate electrode and the semiconductor layer to place the gate electrode at a lower voltage than the semiconductor layer and cause a positive electric charge to be stored in the charge storage layer.

Nonvolatile semiconductor storage device having a charge storage layer that includes metal grains

Nonvolatile semiconductor memory device and method of manufacturing the same

An organic molecular device of an embodiment includes a first and a second conductive layers and an organic molecular layer having an organic molecule provided between the first and the second conductive layer. The organic molecule includes a one-dimensional or quasi one-dimensional &#x3c0;-conjugated system chain having either a first aromatic ring or a second aromatic ring. The first aromatic ring has one or more substituents that are an electron withdrawing group, each substituent of the first aromatic ring is independently selected from the group consisting of the electron withdrawing group and hydrogen, the second aromatic ring has one or more substituents that are an electron releasing group, and each substituent of the second aromatic ring is independently selected from the group consisting of the electron releasing group and hydrogen. The first aromatic ring or the second aromatic ring exist in an unbalanced manner in the &#x3c0;-conjugated system chain.

Organic molecular device

An organic molecular memory in an embodiment includes a first conducive layer, a second conductive layer, and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer having an organic molecule, the organic molecule having a linker group bonded to the first conductive layer, a &#x3c0; conjugated chain bonded to the linker group, and a phenyl group bonded to the &#x3c0; conjugated chain opposite to the linker group and facing the second conductive layer, the &#x3c0; conjugated chain including electron-accepting groups or electron-donating groups arranged in line asymmetry with respect to a bonding direction of the &#x3c0; conjugated chain, the phenyl group having substituents R0, R1, R2, R3, and R4 as shown in the following formula, the substituent R0 being an electron-accepting group or an electron-donating group. 

A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film.

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Tokyo, Japan

Hideyuki Nishizawa