Hitachi, Ltd.

Hideyuki Nemoto

Masanori Tanabe

Yoshitaka Matsuoka

Masatoshi Tsuchiya

Michitaka Shimazoe

Satoshi Shimada

Motohisa Nishihara

Akio Yasukawa

Yoshimi Yamamoto

Yasushi Shimizu

Ko Soeno

Atsuhiro Yoshizaki

Mitsuo Ai

Yasutaka Hoshino

Ryozo Akahane

Tsutomu Fujisawa

Keiji Miyauchi

According to the present invention, there are provided an input terminal, an output terminal, an a.c. generating circuit and a voltage-anomaly detecting circuit. Power supplied to the input terminal is outputted from the output terminal based on an output produced from the voltage-anomaly detecting circuit. When the voltage of the supplied power is abnormal, a.c. power produced from the a.c. generating circuit is outputted from the output terminal. Further, a boosting circuit, a rectifying circuit and a capacitor are provided. The a.c. generating circuit is constructed so as to produce a.c. power from a charged voltage of capacitor. Owing to this construction, a power supply apparatus having a function for compensating for changes in voltage can be provided which is small in size and is inexpensive.

Power supply apparatus having a function of compensating for changes in

A differential pressure measuring transducer assembly including a measuring diaphragm formed of semiconductor material having gauge resistance elements on one surface thereof and a central boss area of large thickness and a peripheral support flange on the other surface thereof defining therebetween an annular portion of small thickness. The measuring diaphragm is attached at the peripheral support flange to a glass support member and a metallic support member formed with pressure conducting bores respectively communicating with each other. The metallic support member is formed of material having a Young's modulus substantially equal to that of the measuring diaphragm.

Differential pressure measuring transducer assembly

A strain gauge is formed on one main surface of a semiconductor single crystal substrate while an insulating oxide film is formed on the other main surface of the substrate. A metal junction layer including several layers inclusive of eutectic alloy layers is formed on the surface of the insulating oxide film and the thus prepared structure is mounted on a metal strain generator. By heating this assembly to temperatures approximating to the eutectic point of the eutectic alloy layer, the semiconductor substrate and the metal strain generator are joined together.

Method of producing semiconductor displacement transducer

A pressure transducer comprising a silicon diaphragm on which a semiconductor strain gauge is formed and which has a diaphragm portion deformable in response to a pressure, an insulating support which is made of borosilicate glass having the silicon diaphragm rigidly mounted thereon and which is provided with a pressure introducing hole in its central part, a metallic support which is cylindrical, which is made of an iron-nickel alloy similar in the thermal expansion coefficient to the borosilicate glass and on which the glass insulating support is rigidly mounted, and a metallic housing within which the integrated structure consisting of the silicon diaphragm, the glass insulating support and the metallic support is arranged; the silicon diaphragm, the insulating support and the metallic support being joined by the anodic bonding, the metallic support being rigidly welded to the metallic housing at its lower end part.

Pressure sensitive apparatus

Growing community of inventors

Katsuta, Japan

Hideyuki Nemoto