Showa Denko K.k.

Nec Corporation

Oki Electric Industry Co., Ltd.

Mitsubishi Materials Corporation

International Superconductivity Technology Center

The Chugoku Electric Power Co., Inc.

Hokkaido Electric Power Company, Inc.

Oki Data Corporation

Sumco Corporation

Mitsubishi Metal Corporation

Resonac Corporation

Hideyuki Kondo

Hiromi Takahashi

Yuseki Suyama

Norio Homma

Shinji Kawamoto

Akira Okubo

Kohei Morikawa

Tadataka Morishita

Junya Kato

Sadaaki Hagino

Kouhei Morikawa

Motoo Miura

Motokazu Suzuki

Ryuji Takahashi

Shigeru Nishikawa

Kenichi Hayashi

Tadataka Horishita

Toshio Tada

Naoya Nakajima

Naoko Maruoka

Riess Anne

Provided is a packing material for HILIC columns for more accurately and more easily performing oligosaccharide analysis by liquid chromatography; an HILIC column which is filled with the packing material for HILIC columns; and a method for analyzing an oligosaccharide with use of this packing material for HILIC columns A packing material for HILIC columns according to the present invention is composed of particles, each of which is obtained by reacting glycidol to a hydroxyl group of a porous cross-linked polymer base material having the hydroxyl group, and which have a hydrophilicity index of 2.30 or more and a surface-pH index of from 0.95 to 1.05.

Packing material for HILIC columns, HILIC column filled with same, and method for analyzing oligosaccharide with use of same

An inspection method is provided for accurate measurement of conductive materials as defects within a silicon oxide film base material embedded in a SOI wafer sample. In the method, the internal state of a sampleis inspected by measuring an conductive material within an insulating base materialformed upon the sample. Ions or electrons are irradiated upon the surface of the inspection region of the base material. A surface image is imaged with secondary electrons emitted from the surfaceand the vicinity of the surface. The inspection region is etched and a surface image is imaged successively with secondary electrons emitted from a surfaceand from its vicinity, renewed successively at the etched depth. The conductive material within the base materialis measured based upon the accumulated surface images.

Inspection method, manufacturing method of piece for analysis, analysis method, analyzer, manufacturing method of SOI wafer, and SOI wafer

The invention intends to provide means for producing halogenated aromatic methylamine useful as an intermediate in the production of agrochemical or medical preparations, by an industrially advantageous method. The process according to the present invention for producing halogenated aromatic methylamine is characterized by comprising hydrogen-reducing a halogenated aromatic nitrile represented by formula (1):(wherein X represents a chlorine atom or a fluorine atom, m represents an integer of 1 to 5, n represents an integer of 1 to 5, m+n&#x2266;6, and when n is 2 or more, each X may be the same or different) using a hydrogenating catalyst in the presence of an organic acid in a solvent to produce a halogenated aromatic methylamine represented by formula (2):(wherein X, m and n have the same meanings as defined above, and a represents an integer of 1 to m).

Production process for halogenated aromatic methylamine

A cartridge is attached to a printer that performs a printing operation only when the cartridge is a predetermined kind of the cartridge. The cartridge includes a first predetermined number of magnet holders provided on the cartridge and a second predetermined number of magnets each of which is received in a corresponding one of the magnet holders. A maximum value of the second predetermined number is equal to the first predetermined number. A combination of the magnet holders having the magnets therein indicates the kind of the cartridge. The image forming apparatus comprises a detector section and an identifying section. The detector has magnetic sensor elements each of which detects a magnetic flux of a corresponding one of the magnets. The identifying section compares reference data with a combination of outputs of the magnetic sensor elements so as to identify the kind of the cartridge.

Toner cartridge comprising a magnet assembly

Process for preparing cyano group-containing aromatic methylamines

A process for forming a thin oxide film on an underlying surface adapted for film formation thereon according to a radio frequency magnetron sputtering method using an oxide target(s). The excitation frequency is a frequency which is higher than 13.56 MHz and which provides a negative target self-bias voltage permitting of film formation.

Process for forming thin oxide film

A process for forming a thin oxide film on an underlying surface adapted for film formation thereon according to a radio frequency magnetron sputtering method using an oxide target(s). The excitation frequency is higher than 13.56 MHz and provides a lower negative target self-bias voltage permitting improved film formation.

High strength superconducting wires and cables each having high current

The semiconductor device provided with a MIS capacitor in which an oxidation-resist film to be used for forming a field oxide film partly buried in a semiconductor by means of the selective oxidation technique is employed as a dielectric. A peripheral edge portion of the oxidation-resist film is turned up at a bird's-beak-shaped edge portion of the field oxide film, so that a gap space is produced between the peripheral edge portion of the oxidation-resist film and the bird's-beak-shaped edge portion of the field oxide film. An insulator layer is formed at the peripheral edge portion of the oxidation-resist film. An upper conductor layer of the MIS capacitor provided on the oxidation-resist film is elongated on this insulator layer.

Semiconductor integrated circuit device provided with a capacitor

A semiconductor integrated circuit device has an improved crossing structure between a resistor region and a wiring conductor layer, and there is provided between the resistor region and the wiring conductor an additional conductor layer isolated from both of them. The additional conductor layer is substantially AC-grounded. As a result, the signal transmission caused by the capacitance-coupling between the resistor region and the wiring conductor is prevented by the additional conductor layer.

Semiconductor device with an improved crossing structure at the

Growing community of inventors

Tokyo, Japan

Hideyuki Kondo