Fujitsu Corporation

Tohoku University

Hideyuki Kikuchi

Kazuo Kobayashi

Masashige Sato

Hitoshi Kishi

Mitsuru Otagiri

Hironobu Kitajima

Yuta Teranishi

Yusuke Nakanishi

Akira Nakazawa

Sunao Itou

Koichi Oikawa

Michinori Kutami

Yasuhiro Kitade

Hiroshi Yamagami

Katsunori Yamagishi

Hitoshi Kanai

Hiroshi Nakao

Mitsuo Takeuchi

Hiroaki Tamura

Takashi Kyotani

Tsugio Kumai

Koshi Kitajima

Tohru Kouhei

Kenichi Ito

Yiqun Zhang

Satoshi Fukutomi

Tomonori Ogawa

A non-transitory computer-readable recording medium recording an image processing program that causes a computer to execute processing of: specifying a damaged portion by analyzing a captured image of a construction; and predicting, in the captured image, a range to which damage spreads based on the specified damaged portion and design data associated with the construction.

Computer-readable recording medium recording image processing program, image processing method, and image processing apparatus

A computer-readable recording medium storing a program that causes a computer to execute a process, the process includes specifying occurrence frequencies of respective gradation values with regard to pixels included in image data and represented by gradation values of a predetermined bit count; extracting a predetermined number of gradation values from a gradation value having a high occurrence frequency in a descending order; generating correspondence information for performing bit conversion of the extracted gradation values into coded values of a bit count in accordance with the predetermined number; and encoding the image data by performing bit conversion of first pixels having any one of the predetermined number of gradation values among the pixels based on the correspondence information, and performing bit conversion of second pixels having any one of gradation values other than the predetermined number of gradation values among the pixels.

Image processing apparatus, image processing method, and recording medium

An image processing method is performed by a computer, for determining that a line is a crack or something other than the crack. The method includes: extracting a linear region from an image of an object captured by an imaging apparatus; determining a luminosity change in a direction traversing the linear region at each of a plurality of positions separate in a longitudinal direction of the linear region; and identifying a type of the linear region based on the luminosity changes at the plurality of positions.

Image processing program, image processing apparatus, and image processing method

A non-transitory computer-readable storage medium storing a program that causes a computer to execute a process, the process including identifying a damaged part of a structure included in a captured image by analyzing the captured image, specifying a first partial area including the damaged part in the captured image, and specifying a second partial area corresponding to the partial area in each of a plurality of past captured images captured before the captured image, and generating a plurality of compressed images corresponding to the plurality of past captured images by compressing an image area in each of the plurality of past captured images without compressing the second partial area.

Non-transitory computer-readable storage medium, image processing method, and image processing apparatus

A transformer connection phase determination device includes a processor that executes a procedure. The procedure includes: computing respective correlation values representing a correlation between current corresponding to power consumed by at least one consumer connected to a transformer connected to one phase corresponding to a combination of two of a plurality of power distribution lines, and line current flowing in each of the plurality of power distribution lines; and determining the phase the transformer is connected to based on the respective correlation values.

Transformer connection phase determination device, method, and program

A non-transitory computer readable storage medium for causing a computer monitoring a power distribution system in which a first customer and a second customer are mixed to execute a process, the process including: acquiring first data measured with a first measurement device which is installed in the first customer and measures the first data at a first time interval; acquiring second data measured with a second measurement device which is installed in the second customer and measures the second data at a second time interval longer than the first time interval; estimating data of the first time interval about an electric power of the second customer by using the acquired first data and the acquired second data; and estimating a value about a voltage or a current for each customer by using the estimated data of the first time interval and the acquired first data.

Estimation program, estimation apparatus, and estimation method

A transformer connection phase determination device includes a processor that executes a procedure includes: acquiring a power value consumed by at least one consumer connected to a transformer connected to any phase corresponding to a combination of two of a plurality of distribution lines, and acquiring respective current values flowing in each of the plurality of distribution lines, in association with a time axis; applying a filter that attenuates low frequency components in a current value caused by the power value and in the respective current values flowing in the plurality of respective power distribution lines; computing respective correlation values indicating correlation between the current values caused by the power values to which the filter has been applied, and the respective current values flowing in the plurality of respective power distribution lines to which the filter has been applied; and determining the phase that the transformer is connected to.

Transformer connection phase determination device and method

A VOA maximum attenuation control circuit has, in addition to a conventional VOA maximum attenuation control circuit, a first resistor and a second resistor, a transistor which is an emitter follower type PNP transistor, and a capacitor. Since charge of the capacitor is 0 volt at the instant when power of the optical interface unit or each optical interface is shifted from OFF state to ON state, current is supplied to a VOA by the transistor in association with shift to the ON state of the power. As a result, attenuation of the VOA reaches maximum. When the capacitor is gradually charged, base potential of the transistor is finally +5 volts, and current is 0 ampere. Then shifting to maximum attenuation control of the VOA by an operational amplifier is realized.

Optical signal receiving apparatus and optical signal attenuation controlling method

A method of manufacturing a molded product includes forming a coat film for covering and concealing particles with the surface of a board while filling the gaps among the particles, and separating the coat film for holding the particles on the reverse side from the board. The coat film and the particles are etched from the reverse side of the separated coat film, the particles are removed from the coat film, and an array of dents carved by the particles is formed on the reverse side of the coat film. A film is formed on the reverse side of the coat film, and a molded product having an array of protrusions on the surface is formed from the film.

Method of manufacturing molded product and method of manufacturing storage medium

A carbon nanotube composite material contains a carbon nanotube and a continuous layer of a metal covering the inner surface of the carbon nanotube. It is produced by forming a metallic matrix layer and treating the metallic matrix layer to form plural nanoholes in the metallic matrix layer to thereby form a nanohole structure, the nanoholes extending in a direction substantially perpendicular to the plane of the metallic matrix layer; forming carbon nanotubes inside the nanoholes; and covering inner surfaces of the carbon nanotubes with a continuous layer of a metal. It has a well controlled small size, has excellent and uniform physical properties, is resistant to oxidation of the metal with time, is highly chemically stable, has good durability enabling repetitive use, has good coatability, high wettability and dispersibility with other materials, is easily chemically modified, is easily handled and is useful in various fields.

Carbon nanotube composite material comprising a continuous metal coating in the inner surface, magnetic material and production thereof

A magnetoresistive effect element is a compound lamination including a first anti-ferromagnetic layer, a first fixed magnetic layer, a tunnel insulation layer, a free magnetic layer, a non-magnetic metal layer, a second fixed magnetic layer, and a second anti-ferromagnetic layer such that a TMR element and a SVMR element are formed, sharing the free magnetic layer.

Magnetoresistive effect element, a magnetic head, and a magnetic reproducing apparatus therewith

A magnetic sensor including a ferromagnetic tunnel junction, comprises a free layera magnetic direction of which freely rotates, and a barrier layerformed on the free layer and reduces a thickness in a first region, the free layer in a region corresponding to the first region functioning as a sensor portion for sensing an external magnetic field. Such magnetic sensor can provide magnetic sensors, magnetic heads and magnetic encoders having high sensitivity. Furthermore, such magnetic sensor can provide magnetic heads which are adaptable to high recording density of magnetic storage mediums, and hard disk devices of large storage capacities using the magnetic heads.

Magnetic sensor, magnetic head, magnetic encoder and hard disk device

A dedicated read IC chip is mounted on a head suspension. The dedicated read IC chip is located closer to a read element. A stray capacitance of a wiring can be reduced. Even if the electric resistance value of the read element increases, the magnetic information data of a higher density can be read out. Moreover, the dedicated read IC chip generates little heat. Even if the dedicated read IC chip is located on the head suspension, an excessive heat cannot be transmitted to the head suspension from the dedicated read IC chip. The mechanical properties and shape of the head suspension can be maintained as expected.

Disk drive with read IC chip and write IC chip mounted respectively on suspension and arm

A magnetoresistive memory apparatus with a semiconductor substrate having a plurality of intersecting, non-contacting word lines and bit lines constituting a matrix, and a plurality of ferromagnetic tunnel junction devices located adjacent each intersection of the plurality of lines, each junction device having, disposed one upon another via insulating layers, free layers having variable magnetization directions and fixed magnetization layers having fixed magnetization directions, with magnetized information being written to the memory device at an intersection selected by magnetization electric currents supplied to the lines, the magnetized information read out by detecting the resistance variance of electric currents flowing through the memory device due to the tunnel effect. The plurality of junction devices deviate from the intersections of the plurality of lines, and between the lines are non-contacting free layer extended portions being extensions from only the free layer, to shorten the interval there between.

Magnetoresistive memory apparatus

A magnetic sensor which comprises (1) a supporting substrate, (2) a ferromagnetic tunnel junction element which has a first magnetic layer on the supporting substrate, a tunnel insulation layer on the first magnetic layer, the tunnel insulation layer comprising aluminum oxide obtained by oxidizing an aluminum film formed on the first magnetic layer by sputtering using an aluminum target having a purity of 99.999% or more, and a second magnetic layer on the tunnel insulation layer, and (3) a converter element converting a change in a magnetic field to a change in resistance. Alternatively, as the ferromagnetic tunnel junction element of (2), one whose tunnel junction has a voltage-resistance characteristic which is asymmetric in the direction of the applied voltage is used. The asymmetric voltage-resistance characteristic may be obtained by heat treatment of a film of the insulation layer material, changing a partial pressure of oxygen in an atmosphere for the formation of insulation layer of an oxide, use of two or more target material for the formation of film and a moving substrate, and the like.

Growing community of inventors

Kawasaki, Japan

Hideyuki Kikuchi