Matsushita Electric Industrial Co., Ltd.

Hideyuki Kaneko

Kazuhiko Matsumura

Koichi Nagao

Yukiko Nakaoka

Hiroaki Fujimoto

A semiconductor device includes a first semiconductor chip provided with a first electrode on a first main surface and a second semiconductor chip provided with a second electrode on a second main surface. The first and the second semiconductor chips are integrated so that the first and second main surfaces are opposed to one another and the first and second electrodes are electrically connected. The second semiconductor chip is polished from the opposite side of the second main surface so that the second semiconductor chip has a thickness smaller than the thickness of the first semiconductor chip.

Semiconductor device and manufacturing method thereof

In a semiconductor device functioning as a three-dimensional device composed of two semiconductor chips bonded to each other, the back surface of the upper semiconductor chip is polished, the entire side surfaces of the upper semiconductor chip are covered with a resin layer, or the center portion of the upper semiconductor chip is formed to be thicker than the peripheral portion thereof. This suppresses the occurrence of a package crack and improves the reliability of the semiconductor device.

Growing community of inventors

Hyogo, Japan

Hideyuki Kaneko