Canon Kabushiki Kaisha

Hideyuki Itoh

Masahiro Kobayashi

Takeshi Ichikawa

Michiko Johnson

Takahiro Ezaki

An image capturing apparatus including a plurality of pixels arranged in a matrix and a signal processing unit configured to process signals read out from the pixels. In a first mode, a charge accumulation is controlled by an electronic shutter. In a second mode, the charge accumulation is controlled by a mechanical shutter. The signal processing unit corrects image data obtained from the plurality of pixels based on a signal obtained by the charge accumulation in the second mode.

Image capturing apparatus

A first pixel includes a first charge accumulation portion of a first conductivity type in a first region. A second pixel includes a second charge accumulation portion of the first conductivity type in a second region and a semiconductor region of a second conductivity type in a third region. Impurities of the second conductivity type are doped in the third region and the impurities of the second conductivity type are doped in at least the second region to generate a first difference between quantities of doping the impurities of the second conductivity type in the first and second regions. Impurities are doped in the first and second regions to reduce a second difference, caused by the first difference, between net quantities of doping impurities of the first conductivity type in the first and second regions.

Method for manufacturing solid-state image sensor

An electromechanical transducer includes multiple elements each having multiple cells, with each cell including a first electrode formed from a conductive substrate, and a second electrode opposed to a first face of the conductive substrate and across a gap. The multiple cells of each of the elements are electrically connected, and the conductive substrate is divided for each of the elements by grooves extending from the first face to a second face which is opposite from the first face. In addition, insulating films are formed on opposing side walls of the conductive substrate and define each of the grooves, wherein a gap width of each of the grooves is narrower on the second face side of the conductive substrate than on the first face side of the conductive substrate.

Growing community of inventors

Kawasaki, Japan

Hideyuki Itoh