Nichia Corporation

Hideyuki Fujimoto

Atsuo Michiue

Shingo Masui

Masatoshi Nakagaki

Yasuhiro Kawata

A semiconductor laser device includes: a housing including: a first upper upward-facing surface, a mounting surface below the first upper upward-facing surface, inner lateral surfaces including a first inner lateral surface and a second inner lateral surface facing the first inner lateral surface, wherein the first upper upward-facing surface and the mounting surface are formed inward of the inner lateral surfaces, and a first wiring part disposed on the first upper upward-facing surface; a semiconductor laser element including: a light output surface, a first lateral surface extending from the light output surface and facing the first inner lateral surface, and a second lateral surface extending from the light output surface and opposite to the first lateral surface; and a first wire connected to the first wiring part for electrical connection of the semiconductor laser element.

Semiconductor laser device

A semiconductor laser device includes: a housing including: a first upper upward-facing surface, a second upper upward-facing surface, a mounting surface, inner lateral surfaces, a first wiring part disposed on the first upper upward-facing surface, and a second wiring part disposed on the second upper upward-facing surface; a submount including: a first main surface fixed to the mounting surface of the housing, and a second main surface opposite to the first main surface; a semiconductor laser element fixed to the second main surface of the submount; a first wire connected to the first wiring part for electrical connection of the semiconductor laser element; and a second wire connected to the second wiring part for electrical connection of the semiconductor laser element.

A semiconductor laser device includes: a housing including: a first upward-facing surface, at least one inner lateral surface, a recess defined by at least the first upward-facing surface and the at least one inner lateral surface, a second upward-facing surface surrounding the first upward-facing surface in a top view and located above the first upward-facing surface, and at least one third upward-facing surface formed outward of the second upward-facing surface in the top view, wherein a height of the at least one third upward-facing surface is different from a height of the second upward-facing surface; at least one first wiring part located in the recess; at least one second wiring part located on the at least one third-upward facing surface and electrically connected to the at least one first wiring part thorough an insulating part of the housing; a semiconductor laser element disposed on the first upward-facing surface of the housing; and a cap fixed to the second upward-facing surface and covering the semiconductor laser element.

A semiconductor laser device includes: a housing including: a recess, and a plurality of wiring parts disposed inside the recess; a submount including: a first main surface fixed to a lower upward-facing surface of the recess, and a second main surface opposite to a first main surface, wherein, in a plan view of the semiconductor laser device, the submount is disposed between the first upper upward-facing surface and a second upper upward-facing surface of the recess; a semiconductor laser element; a light reflecting member; a first wire; and a second wire.

A semiconductor laser device includes a base; a heat sink protruding upward from the base and including an upper surface and a lateral surface extending from the base to the upper surface; a plurality of lead electrodes separated from the heat sink; a submount including: a first main surface fixed to the lateral surface of the heat sink, and a second main surface including a first fixing part, an upper second fixing part, and a lower second fixing part; a protective element fixed to the upper second fixing part; and a wire connecting the protective element and one of the plurality of lead electrodes.

A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.

To provide a ridge-type semiconductor laser element capable of preventing inclination at the time of junction-down bonding and having high heat dissipation, in a semiconductor laser element including a substrate, a semiconductor portion disposed on the substrate and having a ridge on a surface at an opposite side from the substrate, an electrode disposed on a ridge, an insulating layer disposed on the semiconductor portion at the both sides of the ridge and a pad electrode disposed on the electrode, in which, the pad electrode side is a mounting surface side, the pad electrode is disposed extending on the insulating layer, and a spacer is disposed between the semiconductor portion and the pad electrode at parts spaced apart from the ridge.

Growing community of inventors

Anan, Japan

Hideyuki Fujimoto