Semiconductor Energy Laboratory Co., Ltd.

Hideyuki Ebine

Mitsuaki Osame

Aya Anzai

Tomoyuki Iwabuchi

Yoshiharu Hirakata

Masayuki Sakakura

Hidekazu Miyairi

Takeshi Nishi

Kaoru Tsuchiya

The invention provides a method for testing a semiconductor film, a manufacturing method of a semiconductor film, a laser crystallization method, a laser crystallization device, and a laser crystallization system, for testing a laser crystallized semiconductor film, which require less time, have sufficient reliability, are excellent in cost management and applicable to mass production. In the method for testing a semiconductor film having an improved crystallinity by irradiating an energy light, the tested semiconductor film is photographed in a dark field digital image and then the luminance of the digital image is calculated by a computer in a constant direction for testing.

Method for testing semiconductor film, semiconductor device and manufacturing method thereof

It is provided a display device that prevents, when applying a reverse bias, an anode line and a power supply line included in a signal line driver circuit from being short-circuited, and a driving method thereof. According to the invention, a reverse bias applying circuit is provided in a scan line driver circuit or a signal line driver circuit, a signal from the reverse bias applying circuit is supplied to a transistor disposed between a signal line and an anode line, and thereby the transistor is turned off. The reverse bias applying circuit comprises an analog switch or a clocked inverter and a biasing transistor, and drives so as to invert potentials of the anode line and a cathode line and apply a reverse bias to a light emitting element, while turn off the analog switch and turn on the biasing transistor. Then, a potential of the anode line becomes equal to that of a scan line, and thereby turning off the transistor between the anode line and the signal line assuredly.

Display device and driving method thereof

A contact that takes a structure to laminate a protective conductive film over a metal film has a high hardness of the protective conductive film; therefore, a damage of contact surface made by contacting with an electrode of an inspection apparatus can be prevented in an inspection before boding FPC. However, the protective conductive film has higher resistivity compared to the metal film; therefore, contact resistivity with FPC gets higher, and power consumption gets bigger in the condition of using the display device. The present invention provides a contact structure, wherein a structure of FPC contact is formed of a layered film of the metal film and the protective conductive film, and a conductive particle included in an anisotropic conductive film is formed of the protective conductive film in a slit shape having a space wider than a width necessary for an electrical connection with the metal film and a space narrower than a width of an electrode of an inspection apparatus and can be electrically connected with the FPC in both of the protective conductive film and the metal film, and a display device having the contact structure.

Contact structure, display device and electronic device

In a light emitting device using a light emitting element, the invention provides a sealing structure capable of preventing ingress of moisture from the outside and obtaining adequate reliability. The light emitting device has a light emitting element comprising a light emitting layer formed between a first electrode and a second electrode and a pixel portion comprising the light emitting element. The entire surface of the pixel portion is covered with the second electrode. An impermeable insulating film is formed in contact with the first electrode of the light emitting element. The edge of the first electrode and the impermeable insulating film are covered with a partition wall. An opening is formed along the circumference of the pixel portion in the partition wall. The opening passes through the partition wall in the thickness direction, and the side wall and the bottom face thereof are covered with the second electrode.

Growing community of inventors

Kanagawa, Japan

Hideyuki Ebine