Renesas Technology Corp.

Renesas Electronics Corporation

Mitsubishi Denki Kabushiki Kaisha

Hideyuki Arakawa

Yasuki Takata

Hiroshi Horibe

Kazuyuki Misumi

Naoya Yasuda

Fumiaki Aga

Kaori Sumitomo

Hidetoshi Kuraya

Akira Yamazaki

Koji Bando

Soshi Kuroda

Shunji Yamauchi

Kazushi Hatauchi

Katsuyuki Fukudome

Mitsuru Aoki

There is provided a technology capable of suppressing the damage applied to a pad. When the divergence angle of an inner chamfer part is smaller than 90 degrees, the ultrasonic conversion load in a direction perpendicular to the surface of the pad is very small in magnitude. In other words, the ultrasonic conversion load in a direction perpendicular to the surface of the pad is sufficiently smaller in magnitude than the ultrasonic conversion load in a direction in parallel with the surface of the pad. Consequently, when the divergence angle of the inner chamfer part is smaller than 90 degrees, the ultrasonic conversion load in a direction perpendicular to the surface of the pad can be sufficiently reduced in magnitude, which can prevent pad peeling.

Semiconductor device and a manufacturing method thereof

An improvement in the quality of wire bonding is achieved by reducing the vibration of a lead frame or a wiring substrate after wire bonding. Over a heat block in a wire bond portion of a wire bonder, there is provided a cooling blower for cooling a wire-bonded matrix frame so that the temperature thereof may decrease stepwise. After wire bonding, cold air is blown from the cooling blower to the matrix frame, and temperature control of the matrix frame is performed so that the temperature of the matrix frame after wire bonding may decrease stepwise. Or, the wire-bonded matrix frame is fixed with a holding tool such as a frame holding member, a guide member, a roller means, or an elastic means until cooling is completed.

Method of manufacturing semiconductor device, and wire bonder

Height control of a capillary is performed in a stitch bonding (2nd bond) in a wire bonding, so that a thickness of a stitch portion can be controlled, thereby ensuring a bonding strength at the stitch portion and achieving an improvement in a bonding reliability. Also, the stitch portion has a thick portion, and a wire and a part (&#x3b1; portion) of a bonding region of an inner lead is formed to a lower portion of the thick portion, thereby sufficiently ensuring a thickness of the stitch portion and a bonding region.

Method of manufacturing semiconductor device and semiconductor device

A semiconductor chip has a rectangular main surface with first and second vertices on a diagonal line and first and second sides connecting the first and second vertices. A wire is formed between an electrode and a pad of the semiconductor chip. The wire is enclosed in a cavity of a mold. A liquid resin is poured into the cavity to flow from the first vertex toward the second vertex along the first and second sides. The liquid resin is cured to form a resin portion. The wire is formed such that the wire extends on the side relatively further from the first vertex with respect to a straight line connecting the pad and electrode as seen in plan view. Wires are thus prevented from contacting each other in the process of pouring the liquid resin and accordingly electrical short circuit between the wires can be prevented.

Method of manufacturing semiconductor device

A plurality of inner leadsare provided around a die pad. A grounded GND leadis provided in a region between the die padand the plurality of inner leads. A semiconductor chipand the plurality of inner leadsare connected to each other by a plurality of wires. The semiconductor chipand the GND leadare connected to each other by GND wires. The GND wiresare disposed between a plurality of wires. The distance between ends of each adjacent pair of the inner leadsis 0.2 mm or less.

Resin molded semiconductor device and differential amplifier circuit

A semiconductor device of the present invention includes a chip which has a pad; a bump electrode formed on the pad; and a wire whose stitch bonding is made on the bump electrode. The wire satisfies a condition: (modulus-of-elasticity/breaking strength per unit area)&#x2267;400.

Semiconductor device and method of manufacturing the same

A semiconductor device in which memory chips are stacked on the surface of a wiring substrate has a microcomputer chip and an interposer chip arranged on the surface of the memory chip. The pads of the microcomputer chip and the pads of the interposer chip are arranged almost circularly and are connected by bonding wires.

Semiconductor device, interposer chip and manufacturing method of semiconductor device

A semiconductor device of the present invention includes a chip which has a pad; a bump electrode formed on the pad; and a wire whose stitch bonding is made on the bump electrode. The wire satisfies a condition: (modulus-of-elasticity/breaking strength per unit area) &#x2267;400.

A semiconductor device includes an inner lead, a first ball on the inner lead, a bonding pad on the semiconductor device, a second ball on the bonding pad, and a bonding wire connecting the first and second balls. The second ball is formed by mechanically deforming the bonding wire.

Semiconductor device and manufacturing method thereof

A wire bonding apparatus includes a bonding tool having a pressing surface for pressing a wire onto a surface to be joined to the wire and a wire feeding hole open to the pressing surface; a wire feeder for feeding the wire outside of the bonding tool through the wire feeding hole; and a magnet for applying an attraction force to a wire tip end protruding from the wire feeding hole, to bend and hold the wire tip end towards the pressing surface.

Growing community of inventors

Tokyo, Japan

Hideyuki Arakawa