Nippon Yusen Kabushiki Kaisha

Oki Electric Industry Co., Ltd.

Japan Marine Science Inc.

Furuno Electric Company Limited

Hideyuki Ando

Masahiro Yoshida

Tatsuya Kojima

Ryo Kakuta

Satoshi Kawanami

Masahiko Mushiake

Yasuhiro Sudo

Fumitaka Kimura

Satoru Kuwahara

Shusaku Ueno

Koji Kutsuna

Masatoshi Hori

Ai Higosaki

Masahiko Tanigawa

A technique capable of determining a suitable or optimum exclusive region (bumper) setting value and improving the accuracy and others of ship collision avoidance support and automatic ship maneuvering as a result is provided. A ship maneuvering calculation devicecalculates setting information of an automatic ship collision avoidance programfor achieving a function of an automatic ship collision avoidance deviceof a vessel. The ship maneuvering calculation devicegenerates a plurality of exclusive region valuesthat are different in at least a shape and a size as parameter values for an exclusive region set around a vessel, repeatedly executes simulation calculation using the automatic ship collision avoidance program (a copy) while changing a conditionand the parameter values, calculates an evaluation valuecorresponding to the parameter value, based on the result of the simulation calculation, determines an optimum valueof the exclusive region, based on the evaluation value, and sets the optimum valueof the exclusive region to the automatic ship collision avoidance program

Ship maneuvering calculation device

A tank state estimating method of estimating a state in a tank at a predetermined point in time on a sailing course of an LNG carrier is provided. The LNG carrier carrying LNG stored in the tank as a cargo. The tank state estimating method includes: a first step of acquiring information related to specification of the tank; a second step of acquiring information related to a state in the tank at a start point of a target section on the course; a third step of acquiring information on a predictive value of liquid fluctuation of the LNG in the tank during the section, the predictive value being obtained on a basis of a weather forecasting value during the section and information on the weather forecasting value; and a fourth step of calculating the state in the tank at an end point of the section by thermal transfer calculation based on thermodynamics on a basis of the information acquired in the first to third steps in assuming that a heat input to the tank during the section is used for vaporization of the LNG in the tank.

Tank state estimation method and tank state estimation program

A ship's speed meter for measuring a speed relative to the water of a ship, the ship's speed meter including a wave transmitterfor emitting a sound wave toward a sea bottom, a wave receiverfor detecting a plurality of reflected waves, which are reflected waves of the sound wave having been emitted from the wave transmitter, reflected by a plurality of reflecting objectspositioned at different water depths, and an arithmetic processing unitfor calculating a ship's speed relative to the water of the shipbased on a frequency difference of the sound wave and the reflected wave. The arithmetic processing unitobtains a change rate of a current velocity in a water depth direction by obtaining current velocities at a plurality of different water depths based on a frequency difference between the sound wave and the plurality of reflected waves, and calculates a current velocity at a water depth at which the change rate is smaller than or equal to a threshold value as the ship's speed relative to the water of the ship

Ship speed meter and ship speed measurement method

A terminal device stores ship characteristic data that indicates a relationship between rotation speed and ship speed, and rotation speed and fuel consumption when a ship is navigated under various navigation conditions. If a user inputs data that indicates draft state and wind and wave state on a performance display screen displayed on the terminal device, the terminal device generates relationship data that indicates a relationship between rotation speed and ship speed, and rotation speed and fuel consumption when a ship is navigated under wind and wave states corresponding to the input data and each of a plurality of Beaufort states that are set in the terminal device in advance on the basis of the ship characteristic data. The terminal device displays a graph that displays the relationship between rotation speed, ship speed and fuel consumption for each of a plurality of navigation conditions using the relationship data.

Data-processing device, program, recording medium and data-processing method for generation of data that indicates navigation performance of ship

Disclosed herein is a semiconductor memory device. In the semiconductor memory device, a transfer transistor having a drain region and a source region is formed on an Si semiconductor substrate. A lower end of a storage node is electrically connected to the drain region through a drain contact hole defined in an interlayer insulator. The storage node has an on-film extending portion which extends on an upper surface of the interlayer insulator, and a fin-shaped electrode portion which protrudes from the on-film extending portion. Structurally, the fin-shaped electrode portion is provided within a capacitor region so as to extend within a region smaller than the capacitor region and is spaced away from the on-film extending portion on the side of a bit line contact hole defined in the interlayer insulator.

Method of manufacturing semiconductor memory device having a capacitor

In a semiconductor device, a transfer transistor having a drain region and a source region is formed on an Si semiconductor substrate. A lower end of a storage node is electrically connected to the drain region through a drain contact hole defined in an interlayer insulator. The storage node has an on-film extending portion which extends on an upper electrode portion which protrudes from the on-film extending portion. Structurally, the fin-shaped electrode portion is provided within a capacitor region so as to extend within a region smaller than the capacitor region and is spaced away from the on-film extending portion on the side of a bit line contact hole defined in the interlayer insulator.

Semiconductor memory device

Growing community of inventors

Tokyo, Japan

Hideyuki Ando