Fujitsu Corporation

Fujitsu Semiconductor Limited

Hideyuki Amada

Yoshihiko Imanaka

Toshio Manabe

Toshihisa Anazawa

Fumiaki Kumasaka

Naoki Awaji

Sachio Ido

Hitoshi Yamada

Hideo Akiyoshi

Tetsuo Ashizawa

A photoexcitable material includes: a solid solution of MN (where M is at least one of gallium, aluminum and indium) and ZnO, wherein the photoexcitable material includes 30 to 70 mol % ZnO and has a band gap energy of 2.20 eV or less.

Method for manufacturing photoexcitable material

A photochemical electrode includes: an electrically conductive layer; and a photoexcitation material layer provided over the electrically conductive layer and including a photoexcitation material, wherein the photoexcitation material layer is one of a first photoexcitation material layer in which a potential of the conduction band minimum decreases from a second surface opposite to a first surface on the side of the electrically conductive layer toward the first surface and a second photoexcitation material layer in which a potential of the valence band maximum decreases from the second surface toward the first surface.

Method for producing photochemical electrode

A photochemical electrode includes: an electrically-conductive layer; and a photo-excited material layer including a photo-excited material provided over the electrically-conductive layer, wherein in a surface of the photo-excited material layer, a lattice plane having highest atomic density in a crystal structure of the photo-excited material is oriented in a surface direction of the surface of the photo-excited material layer.

Method for generating photochemical electrode

A photoexcitation material includes: a wurtzite type solid solution crystal containing t gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A&#x3e;B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.

Method for producing a photoexcitation material

A photoexcitation material includes: a wurtzite type solid solution crystal containing gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A&#x3e;B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.

Photoexcitation material

A method of manufacturing a capacitor includes forming, above a first metal foil, a first dielectric film of a ceramic material containing barium oxide by blowing dry ceramic particles to the first metal foil from a nozzle, forming, in the first dielectric film, a first via conductor connected to the first metal foil and a second via conductor connected to the first metal foil, forming, above the first dielectric film, a first electrode pattern connected to the first via conductor, and patterning the first metal foil to form a second electrode pattern connected to the second via conductor.

Method of manufacturing capacitor

A method of manufacturing a capacitor includes forming a first ceramic film on a first base made of a metal, forming a second ceramic film on a second base made of a metal, forming a first copper electrode pattern and a first copper via-plug on a surface of one of the first and second ceramic films, the electrode pattern and the via-plug being separate from each other, bonding the first and second ceramic films together with the first electrode pattern and the via-plug therebetween, by applying a pulsed voltage between the first base and the second base while the first base and the second base are pressed so that the first ceramic film and the second ceramic film are pressed on each other, and removing the second base.

Laminate stacked capacitor, circuit substrate with laminate stacked capacitor and semiconductor apparatus with laminate stacked capacitor

2data transfer signal lines are provided between transmitting and receiving sides of data on n signal lines in order to reduce power consumption required for a data transfer even if the number of bits of data to be transferred increases. The transmitting side has an encoder for outputting a signal of a low potential to one signal line and a signal of a high potential to the other signal lines among the 2data transfer signal lines in response to an input of transfer data from the n signal lines. The receiving side has a decoder for outputting the similar data as the transfer data to n signal lines in response to inputs from the 2data transfer signal lines.

Data transfer system

A method of manufacturing a electrode foil composed of a valve metal layer of a first valve metal and a metal foil of a second valve metal supporting the valve metal layer, the method includes coating fine particles of the first valve metal with a resin to form composite fine particles, forming the composite fine particles into an aerosol, jetting the aerosol to the metal foil in an atmosphere under a reduced pressure, depositing the composite fine particles onto the metal foil to form a aerosol deposition layer, and removing selectively the resin from the aerosol deposition layer to form the valve metal layer.

Growing community of inventors

Atsugi, Japan

Hideyuki Amada