Shin-etsu Chemical Co., Ltd.

Shin-etsu Chem Co., Ltd.

Hideyoshi Yanagisawa

Masaaki Yamaya

Yoshinori Hirano

Shoji Ichinohe

Masayuki Takahashi

Toshio Yamazaki

Masashi Iio

Masaya Ueno

Akira Yamamoto

Kazunori Kondo

Hitoshi Maruyama

Kazuhide Yanaizumi

Hiroshi Yoshioka

Noriyuki Koike

Katsuya Takemura

Michihiro Sugo

Hirofumi Kishita

Tsuneo Kimura

Hiroyuki Yasuda

Toshio Takago

Muneo Kudo

Shohei Tagami

Masahiro Furuya

Eiichi Tabei

Satoshi Asai

Akinari Itagaki

Takashi Miyazaki

Norio Kameda

Ryuto Hayashi

Satoru Beppu

Hiroshi Yoshihoka

Takanori Katou

Satoshi Sekizawa

Hiroyuki Iwaki

Kazuhido Yanaizumi

A pattern is formed by (i) applying a chemically amplified positive resist composition comprising (A) a base resin, (B) a photoacid generator, (C) an organic solvent, and (D) a polyvinyl alcohol or polyvinyl alkyl ether onto a substrate to form a resist film thereon, (ii) exposing the resist film to radiation, and (iii) dry etching the resist film with an oxygen-containing gas for development. Using the chemically amplified positive resist composition, a positive pattern is formed via dry development without a need for silylation.

Pattern forming process

A silicone-modified polybenzoxazole resin comprising repeating units of formulae (1a) and (1b) is prepared by addition polymerization. Rto Rare a C-Cmonovalent hydrocarbon group, m and n are integers of 0-300, Ris C-Calkylene or phenylene, a and b are positive numbers of less than 1, a+b=1, and Xis a divalent linker of formula (2). The resin is flexible, soluble in organic solvents, and easy to use. 

Silicone-modified polybenzoxazole resin and making method

A chemically amplified positive resist composition is provided comprising a specific alkali-soluble polymer adapted to turn soluble in alkaline aqueous solution under the action of acid as base resin, an alkali-soluble polymer, and a photoacid generator in an organic solvent. The composition forms a resist film which can be briefly developed to form a pattern at a high sensitivity without generating dimples in pattern sidewalls.

Chemically amplified positive resist composition and patterning process

A cleaner composition consisting essentially of (A) 90.0-99.9 wt % of an organic solvent and (B) 0.1-10.0 wt % of a C-Calcohol, and containing (C) 20-300 ppm of sodium and/or potassium is effective for cleaning a surface of a silicon semiconductor substrate. A satisfactory degree of cleanness is achieved within a short time and at a high efficiency without causing corrosion to the substrate.

Cleaner composition and preparation of thin substrate

A photosensitive resin composition comprising (A) a silicone-modified polybenzoxazole resin and (B) a photoacid generator which is decomposed to generate an acid upon exposure to radiation of 190-500 nm is coated onto a substrate to form a thick coating, which is exposed to radiation, baked, and developed to form a pattern. The resin coating is capable of forming a fine pattern and has improved crack resistance and other film properties, and reliability.

Photosensitive resin composition, photosensitive dry film, photosensitive resin coating, and pattern forming process

A cleaner composition consisting essentially of (A) 92.0 wt % to less than 99.9 wt % of an organic solvent, (B) 0.1 wt % to less than 8.0 wt % of a C-Calcohol, and (C) 0.001-3.0 wt % of a quaternary ammonium salt is effective for removing any silicone adhesive residues on a silicon semiconductor substrate. A satisfactory degree of cleanness is achieved within a short time and at a high efficiency without causing corrosion to the substrate.

The invention provides a substrate detergent composition used for cleaning a surface of a substrate, comprising: (A) A quaternary ammonium salt: 0.1 to 2.0% by mass; (B) Water: 0.1 to 4.0% by mass; and (C) An organic solvent: 94.0 to 99.8% by mass. There can be provided a substrate detergent composition used for cleaning a surface of a substrate contaminated with a silicone component whose water contact angle is 100&#xb0; or more.

Substrate detergent composition

A chemically amplified positive resist dry film to be formed on a support film contains 5-40 wt % of a component having a boiling point of 55-250&#xb0; C. under atmospheric pressure. The resist dry film having flexibility and dimensional stability can be prepared through simple steps. The resist dry film can be efficiently and briefly laid on an article and processed to form a pattern.

Chemically amplified positive resist dry film, dry film laminate and method of preparing laminate

An epoxy-modified silicone resin obtained using a compound having 3 or 4 glycidyl groups and 3 or 4 (meth)allyl groups in the molecule is novel. A curable composition comprising the epoxy-modified silicone resin cures into a film having improved heat resistance and adhesion.

Epoxy-modified silicone resin, making method, curable composition, and electronic part

An aryl compound terminated with at least three glycidyl groups and at least three (meth)allyl groups, having formula (1) wherein Ris a C-Chydrocarbon, Ris hydrogen or methyl, and n is 3 or 4 is novel. It is prepared by reacting an aryl compound having at least three (meth)allyl-containing phenol groups with a 2-halomethyloxirane. 

Aryl compound and making method

A modified novolak phenolic resin is obtained by reacting a novolak phenolic resin containing at least 50 wt % of p-cresol with a crosslinker. This method increases the molecular weight of the existing novolak phenolic resin containing at least 50 wt % of p-cresol to such a level that the resulting modified novolak phenolic resin has heat resistance enough for the photoresist application.

Modified novolak phenolic resin, making method, and resist composition

A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, and etching away the sacrificial film pattern through an aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) coating a substrate with a composition comprising a cresol novolac resin, a crosslinker, and a photoacid generator, (B) heating to form a sacrificial film, (C) patternwise exposure, (D) development to form a sacrificial film pattern, and (E) forming crosslinks within the cresol novolac resin.

Method for manufacturing micro-structure and optically patternable sacrificial film-forming composition

A positive resist composition comprising an organosiloxane-modified novolak resin, a photosensitive agent, and an organic solvent is provided, the resin comprising structural units having formula (1) wherein Ris an organosiloxy group, and Ris hydrogen or alkyl. The composition is photosensitive, turns alkali soluble in the exposed region, eliminates any film thickness loss after development, and displays improved resistance to electrolytic plating and Odry etching. 

Positive resist composition and pattern forming process

An organosiloxane-modified novolak resin comprising structural units having formula (1) wherein Ris an organosiloxy group having a monovalent C-Chydrocarbon group bonded to silicon, and Ris H or C-Calkyl or alkoxy. The resin has high heat resistance and high strength inherent to novolak resins and low stress inherent to organosilicon compounds. 

Organosiloxane-modified novolak resin and making method

In a chemically amplified positive resist composition comprising (A) a base resin, (B) a photoacid generator, (C) a thermal crosslinker, and (D) an organic solvent, the base resin is a specific polymer and the crosslinker is a siloxane compound. A coating of the composition is readily developable in aqueous alkaline solution. On heat treatment, it forms a cured resist pattern film of satisfactory profile.

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Annaka, Japan

Hideyoshi Yanagisawa