National Institute of Advanced Industrial Science and Technology

Hideyo Ookushi

Satoshi Yamasaki

Hiromitsu Kato

Masahiko Ogura

Toshiharu Makino

Daisuke Takeuchi

Norio Tokuda

Shinichi Shikata

Hideyuki Watanabe

Sung-Gi Ri

A white light-emitting device of the present invention includes a substrate (); a diamond semiconductor layer () provided on the substrate (), in which one or a plurality of p-type &#x3b1; layers (), a p-type or n-type &#x3b3; layer (), and one or a plurality of n-type &#x3b2; layers () are laminated in this order from the substrate (); a first electrode () provided on the &#x3b1; layer () which injects an electric current; a second electrode () provided on the &#x3b2; layer () which injects an electric current; and a fluorescent member () which coats a light emission extraction region of the surface of the diamond semiconductor layer.

White light-emitting element

There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same

Provided is a light emitting device formed of an indirect transition semiconductor configured from a semiconductor material having high exciton binding energy, wherein an active layer of the indirect transition semiconductor or an active region by a pn junction is formed, the light emitting device has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.

High efficiency indirect transition semiconductor ultraviolet light emitting device

Growing community of inventors

Tsukuba, Japan

Hideyo Ookushi