Kabushiki Kaisha Toshiba

Fujitsu Corporation

Kirin Brewery Company, Limted

Kirin Beer Kabushiki Kaisha

Hideyasu Ando

Naoya Okamoto

Shinji Yamaura

Yasunori Kasuga

Akira Shirakura

Hironori Suzuki

Masayuki Sato

Takeshi Tomioka

Toshiya Imai

Susumu Nishiwaki

Yoshiyasu Ito

Toshiyuki Nakano

Masahiro Hanai

Yoshihiko Hirano

Takeshi Udagawa

Hiroyoshi Narita

Hidehito Matsuzaki

Yoshikazu Tanno

Kenichi Nojima

Masafumi Takei

Motoharu Shiiki

Hisashi Kusumori

Teruyuki Yamasaki

Koji Higashibata

Kiyokazu Umehara

Yoshlyasu Ito

A nonlinear resistive coating materialin an embodiment includes: a matrix resinmade of an epoxy resin which is cured by adding a curing agent thereto; ZnO-containing particlesdispersedly contained in the matrix resinand made of a sintered compact containing ZnO as a main component; and semiconductive surface-treated whiskersdispersedly contained in the matrix resinand made of ZnO subjected to titanate coupling surface modification treatment.

Nonlinear resistive coating material, bus, and stator coil

A current-voltage non-linear resistor () comprises a sintered body () of a mixture whose chief constituent is zinc oxide and including as auxiliary constituents at least bismuth (Bi), antimony (Sb), manganese (Mn), cobalt (Co) and nickel (Ni). Also, the average grain size of the mixture is no more than 0.4 &#x3bc;m; and the average grain size of the zinc oxide grains in the sintered body () is no more than 7.5 &#x3bc;m and the standard deviation based on the grain size distribution of zinc oxide grains in the sintered body () is no more than 15% of the average grain size of the zinc oxide grains.

Current-voltage non-linear resistor and method of manufacture thereof

A ZnO varistor powder can be obtained with high operating voltage and excellent current-voltage nonlinear resistance characteristics. In the ZnO varistor powder, the main ingredient is zinc oxide (ZnO); and at least bismuth (Bi), cobalt (Co), manganese (Mn), antimony (Sb), nickel (Ni), and aluminum (Al), calculated as BiO, COO, MnO, SbO, NiO, and Al, are contained as accessory ingredients in amounts of 0.3 to 1.5 mol % BiO, 0.3 to 2.0 mol % CoO, 0.3 to 3 mol % MnO, 0.5 to 4 mol % SbO, 0.5 to 4 mol % NiO, and 0.0005 to 0.02 mol % Al. ZnO content is greater than or equal to 90 mol %; the bulk density is greater than or equal to 2.5 g/cc; the powder is a spherical powder in which the 50% particle diameter in the particle size distribution is 20 &#x3bc;m to 120 &#x3bc;m.

ZnO varistor powder

The present invention provides a plastic container or bottle having an inner wall surface coated with a DLC film which has the same level of oxygen barrier property as prior art DLC coated containers while at the same time preventing the coloration of the neck portion found in the containers of the prior art. The DLC film formed on the neck portion of the inventive bottle has a lower graphite mixing proportion than the DLC film formed on body portion, and the oxygen permeability of the container is less than or equal to 0.0050 ml/container (500 ml PET container)/day. The apparatus and the method of producing such a bottle are also described.

DLC film coated plastic container, and device and method for manufacturing the plastic container

A non-linear resistor comprises a sintered body having zinc oxide as a main component, a side-surface high resistance layer arranged at a side-surface of the sintered body, and an electrode arranged at upper and lower surfaces of the sintered body. The side-surface high resistance layer is formed of a specifically selected material. The end-to-end distance between an end portion of the electrode and a nonlinear resistor end portion including the side-surface high resistance layer falls within a range of 0 mm to the thickness of the side-surface high resistance layer+0.01 mm.

Nonlinear resistor and method of manufacturing the same

A current/voltage non-linear resistor comprises a sintered body having a main component of ZnO, an electrode applied to a surface of the sintered body and an insulation material applied to another surface of the sintered body. The main component containing, as auxiliary components, Bi, Co, Mn, Sb, Ni and Al, and the contents of the auxiliary components are respectively expressed as Bi O , Co O , MnO, Sb O , NiO and Al , of Bi O : 0.3 to 2 mol %, Co O : 0.3 to 1.5 mol %, MnO: 0.4 to 6 mol %, Sb O : 0.8 to 7 mol %, NiO: 0.5 to 5 mol % and Al : 0.001 to 0.02 mol %; a Bi O crystalline phase in the sintered body including an &agr;-Bi O phase representing at least 80% of the total Bi O phase.

Current/voltage non-linear resistor and sintered body therefor

The invention relates to a method for manufacturing a III-V system compound semiconductor device, provides such a new C dopant as alkyl halide (CH.sub.2 I.sub.2 for example) containing carbon (C), iodine (I), and hydrogen (H) for giving a highly p-type conductivity to a GaAs crystal layer, an InGaAs crystal layer or the like as an object of it, and includes a process of forming a p-type III-V system compound semiconductor layer as using a compound containing carbon (C) as a dopant material for giving a p-type conductivity and further containing iodine (I) and hydrogen (H) as impurity.

III-V system compound semiconductor device and method for manufacturing

Growing community of inventors

Kawasaki, Japan

Hideyasu Ando