Canon Kabushiki Kaisha

Tokyo Institute of Technology

Panasonic Corporation

Agc Inc.

Hideya Kumomi

Ryo Hayashi

Katsumi Abe

Masato Ofuji

Masafumi Sano

Hideo Hosono

Yoshinori Tateishi

Takao Yonehara

Tetsuya Kaneko

Hiroshi Matsuda

Kunihiro Sakai

Hisaaki Kawade

Haruki Kawada

Hiroyasu Nose

Yoshihiro Yanagisawa

Toshimitsu Kawase

Eigo Kawakami

Yuko Morikawa

Toshio Kamiya

Nobuhiko Sato

Yasuyoshi Takai

Kenji Nomura

Isao Tanaka

Ayumu Sato

Fumiyasu Oba

Yu Kumagai

Hidenori Hiramatsu

Hideyuki Omura

Soshi Iimura

Yoshinori Muraba

Lee Alan Burton

Yuzo Shigesato

Yoyo Hinuma

Kojiro Nishi

Junghwan Kim

Tatsuya Iwasaki

Kenji Takahashi

Satoru Watanabe

Hidemasa Mizutani

Hisato Yabuta

Kenji Yamagata

Takehiko Kawasaki

Norio Kaneko

Kozo Arao

Hiroyuki Tokunaga

Shigeki Kondo

Nobuhiro Nakamura

Sho Suzuki

Naomichi Miyakawa

Yasutomo Fujiyama

Masatoshi Watanabe

Takeo Yamazaki

Mikio Shimada

Hisae Shimizu

Tomohiro Watanabe

A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.

Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor

A photoelectronic device includes an active layer containing inorganic particles, and an oxide semiconductor layer containing zinc (Zn), silicon (Si), and oxygen (O), where the oxide semiconductor layer and the active layer are stacked layers. The photoelectronic device further includes a multilayer transparent electrode over or under the active layer, wherein the oxide semiconductor layer serves as a part of the multilayer transparent electrode.

Photoelectronic device, flat panel display using the same, and fabrication method of photoelectronic device

There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Light emitting display apparatus

An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm/Vs or more.

Oxide semiconductor compound, semiconductor element provided with layer of oxide semiconductor compound, and laminated body

The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZnNor the chemical formula XZnNwherein Xis Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

Zinc nitride compound and method for producing same

A pixel circuit including at least a light emitting element, and a thin film transistor that supplies to the light emitting element a first current controlling a gray scale according to luminance-current characteristics of the light emitting element, wherein the thin film transistor has a back gate electrode, at least a driving period in which the thin film transistor supplies the first current to the light emitting element, and a writing period in which a second current is written to the thin film transistor before the driving period in order to pass the first current to the thin film transistor during the driving period are included, and by changing voltages which are applied to the back gate electrode in the driving period and the writing period, current capability to a gate voltage of the thin film transistor is made to differ.

Pixel circuit with a writing period and a driving period, and driving method thereof

A new driving circuit is provided. The driving circuit according to the present invention comprises a first period for setting a current to be supplied to a display element, a second period for setting a gray-scale of the display element, and a third period for supplying a driving current to the display element. The present invention, in the driving circuit of the display element, is provided with a current source circuit for supplying a constant current to the display element and a control circuit for controlling the time to supply a constant current to the display element from the current source circuit.

Driving circuit of display element and image display apparatus

Provided is a top gate thin film transistor, including on a substrate: a source electrode layer; a drain electrode layer; an oxide semiconductor layer; a gate insulating layer; a gate electrode layer including an amorphous oxide semiconductor containing at least one kind of element selected from among In, Ga, Zn, and Sn; and a protective layer containing hydrogen, in which: the gate insulating layer is formed on a channel region of the oxide semiconductor layer; the gate electrode layer is formed on the gate insulating layer; and the protective layer is formed on the gate electrode layer.

Top gate thin film transistor and display apparatus including the same

A driving circuit of a display element includes a current source circuit having a first transistor and a holding circuit for holding a gate voltage of the first transistor during a first period at an electric potential corresponding to a constant current to be supplied to the display element, and a control circuit including a second transistor connected in series to the current source circuit and connected in parallel to the display element and the capacitor element whose one terminal is connected to a gate of the second transistor and the other terminal is connected to a line, and controlling the light emission time of the display element by controlling the second transistor during a third period. A constant voltage is applied from the line during the first period. The gray-scale voltage is applied from the line during a second period, and the gate of the second transistor and the one terminal are short-circuited. In addition, an electric charge based on the difference between the gray-scale voltage and the gate voltage of the second transistor is accumulated in the capacitor element, and a sweep voltage is applied during the third period, so that the ON time of the second transistor is controlled.

Growing community of inventors

Tokyo, Japan

Hideya Kumomi