Hitachi, Ltd.

Hitachi Haramachi Electronics Co., Ltd.

Other

Hideya Kokubun

Ryuichi Saito

Nobuya Koike

Yoshihiko Koike

Akira Tanaka

Kazuji Yamada

Kazuhiro Suzuki

Masahiro Koizumi

Jin Onuki

Isao Kobayashi

Yasutoshi Kurihara

Mamoru Sawahata

Yutaka Higashimura

Tadao Kushima

Takashi Haramaki

Shigeki Sekine

Takashi Hosokawa

Hideo Shimizu

Makoto Kitano

Hisanori Okamura

Noboru Baba

Masahiko Sakamoto

Hirosi Akiyama

Sigeki Sekine

A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

Circuit board

A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

Semiconductor device

Semiconductor device having power semiconductor elements

A high reliability electric power control semiconductor device with a prolonged product lifetime has been provided by successfully suppressing the metal support plate or the metal heat dissipation plate from warping due to the thermal stress during bonding so as to prevent the occurrences of cracks and gaps in the brazing fillers in the bonded layers between the metal heat dissipation plate or the metal support plate and the insulation plate in the semiconductor device comprising the semiconductor elements, metal heat dissipation plate, thermal stress buffer, insulation plate, and the metal support plate, wherein at least one of the metal heat dissipation plate and the metal support plate comprises a copper alloy of which a softening temperature at which a hot hardness of which becomes 1/2 of the hardness at the room temperature is 350.degree. C. or more. Further, in the semiconductor device fabricated by bonding the semiconductor elements via the thermal stress buffer, the heat dissipation plate and the insulation plate onto the metal support plate, the heat dissipation plate comprises a portion having a reduced thickness in the periphery thereof machined by counterboring or the like.

Semiconductor device having thermal stress resistance structure

Growing community of inventors

Takahagi, Japan

Hideya Kokubun