Tokyo Ohka Kogyo Co., Ltd.

Tazmo Co., Ltd.

Hideya Kobari

Hiroki Endo

Hiroyoshi Sago

Toshimasa Nakayama

Akira Hashimoto

Koji Ueda

Yoshio Hagiwara

Yoshimi Sato

Atsushi Kawakami

Tetsuya Nakajima

Hidenori Miyamoto

Futoshi Shimai

Jun Koshiyama

Shigemi Fujiyama

Tatsuhiko Shibuya

Hiroyuki Iida

Hirotsugu Kumazawa

Susumu Okano

Ryuzo Takatsuki

Disclosed is a cleaning liquid for lithography which is characterized by containing a mixed organic solvent which is obtained by mixing (A) at least one solvent selected from ketone organic solvents and glycol ether organic solvents, (B) at least one solvent selected from lactone organic solvents and (C) at least one solvent selected from alkoxy benzenes and aromatic alcohols. This cleaning liquid is highly safe and does not have adverse effects on the environment or the human body, while having basic characteristics necessary for a cleaning liquid for lithography. In addition, this cleaning liquid can be stably supplied at low cost.

Cleaning liquid for lithography and cleaning method using same

It is disclosed a dielectric element comprising a lower electrode, a dielectric layer, and an upper electrode which are provided on a substrate, in which at least one of the electrodes is a Pt layer, a Ru layer is used as a base layer for the Pt layer. In the fabrication of the dielectric element, the Pt layer is formed by electroplating, a photoresist pattern is used as a plating mask, and an Ru layer is formed as a seed layer. The present invention makes it possible to provide a dielectric element using Pt as an electrode material, that is capable of easily forming a Pt electrode having excellent electrical characteristics without generating voids or seams, that is capable of forming a fine pattern, and that does not occur contamination in a processing chamber, and a method for fabricating a dielectric element of having the characteristics mentioned above.

Dielectric element and method for fabricating the same

According to the invention disclosed, application liquid such as spin-on-glass (SOG) is dropped on the surface of a substrate such as a semiconductor wafer having irregularities thereon and is dispersed on the substrate surface using a centrifugal force generated by rotating the substrate. The rotation of the substrate is performed in a first rotational action at a low speed and a second rotational action at a high speed, the first and second rotational actions being separated by a time interval. The second rotation may be at a constant speed. Alternatively, the rotational speed of the second rotational action may comprise rotation at an intermediate speed continuously followed by rotation at a higher speed. The time interval between the first and second rotational actions is ten times the duration of the first rotational action or longer. The duration of the second rotational action is three times that of the first rotational action or longer. Such time interval and relative durations make the application liquid more conformable to the substrate surface and causes the application liquid to be sufficiently dispersed on the substrate to provide a film having the desired thickness on the substrate, even though the substrate has irregularities thereon.

Method of forming coating film on a substrate

A substrate onto which a coating solution is dropped is rotated at a low speed in a first rotational mode and then after an interval of time at a high speed in a second rotational mode. At the end of the first rotational mode, the coating solution is coated to a thickness larger than a given thickness on irregularities on the substrate such as twin patterns and a global pattern, with the coating solution being coated to a thickness smaller than the given thickness between the twin patterns. Subsequently, at the start of the second rotational mode, the coating solution coated on the twin patterns and the global pattern flows into spaces between these patterns. At the end of the second rotational mode, the thickness of the coating solution on the twin patterns is almost nil, and the thickness of the coating solution on the global pattern is small in its entirety though it is somewhat large in the central area of the global pattern.

Coating solution for forming silica coating and method of forming silica coating

Proposed is an improved method for the formation of a silica-based coating film on the surface of a substrate such as a silicon wafer in the manufacture of semiconductor devices by coating the substrate surface with a polysilazane-containing coating solution followed by conversion of the coating layer of polysilazane into a silica-based coating film. The method comprises drying the coating layer of the polysilazane according to a heating schedule at a specified heating rate with continuous or stepwise increase of the temperature up to 240.degree. to 350.degree. C. followed by an irradiation treatment with far ultraviolet light at a temperature of 240.degree. to 350.degree. C. and then by a baking treatment at 350.degree. to 800.degree. C.

Method for the formation of a silica-based coating film

The invention disclosed defined a vertically extending passage through the rotary center of an inner cup or the rotary center of a spinner in a notary chemical treater, disposes a stationary cleaning fluid nozzle in the passage, and injects the cleaning fluid from the nozzle to clean a lid of the rotary chemical treater and the underside of an object treatment within the treater. The underside of the lid and the underside of the objective part are efficiently cleaned, and the need for sealing the movable parts against the cleaning fluid is eliminated because the nozzle is stationary, ensuring the prevention of the cleaning fluid from leaking.

Rotary chemical treater having stationary cleaning fluid nozzle

A solution applying apparatus has inner and outer cups each having an upper opening, the inner cup being rotatably disposed in the outer cup. The inner cup houses a planar workpiece such as a glass substrate therein which is to be coated with a coating solution such as a resist solution. The solution applying apparatus also has a lid assembly having an outer cup lid for closing the upper opening of the outer cup and an inner cup lid for closing the upper opening of the inner cup, the inner cup lid being rotatable with respect to the outer cup lid. The inner cup has drain holes defined in an outer circumferential portion thereof for providing communication between a space within the inner cup and a space outside of the inner cup to drain an excessive coating solution from the inner cup. The outer cup has an annular collection passage defined therein along the outer circumferential portion of the inner cup, the drain holes opening into the annular collection passage. The lid assembly includes a self-centering valve body that can be vertically movable into and out of snugly fitting relation to a through hole defined in the inner cup lid and a lost motion mechanism for moving the valve body to an open position thereof while the first and second cup lids remain closed and for opening the outer cup lid while the inner cup lid remains closed. After the workpiece has been coated with the coating solution, the valve body is lifted out of the through hole to smoothly eliminate a vacuum developed in the inner cup, and then the inner cup is opened.

Solution applying apparatus

Growing community of inventors

Kanagawa-ken, Japan

Hideya Kobari