Murata Manufacturing Co., Ltd.

Hideya Horiuchi

Michio Kadota

Junya Ago

Mamoru Ikeura

Takuo Hada

Katsumi Fujimoto

Toshimaro Yoneda

Yasuhiro Kuratani

Takeshi Nakao

Shinsuke Ikeuchi

Yoichi Mochida

Takao Mukai

Kansho Yamamoto

Seigo Hayashi

Yasunori Takakuwa

Masakazu Mimura

Takaaki Asada

Hiroshi Kawai

Kazuhiko Morozumi

Satoru Hachinohe

Yasuhiro Negoro

Haruo Morii

Akiteru Takatsuka

Junichi Koshino

A piezoelectric transformer that includes a vibration portion assembly having an output electrode, an output-side intermediate electrode, an input-side intermediate electrode, and an input electrode. The vibration portion assembly includes n vibration portions. The input electrode includes one to n input electrode pieces. The output electrode includes one to n output electrode pieces. Wiring lines are arranged such that voltages of opposite phases can be respectively applied to a first input electrode piece group of the input electrode pieces corresponding to odd-numbered vibration portions, and a second input electrode piece group of the input electrode pieces corresponding to even-numbered vibration portions. The second output electrode piece and the first output-side intermediate electrode piece are superposed with each other in the thickness direction. The first output electrode piece is not superposed with either of the first and second output-side intermediate electrode pieces in the thickness direction.

Piezoelectric transformer

A piezoelectric transformer that includes a base and an upper layer supported by the base. The upper layer includes a first piezoelectric layer that includes the portion of the upper layer that is interposed between an output electrode and an intermediate electrode, and a second piezoelectric layer that is superposed with the first piezoelectric layer and includes the portion of the upper layer interposed between the intermediate electrode and an input electrode in at least n vibration portions. Moreover, the input electrode includes multiple input electrode pieces and the output electrode includes multiple output electrode pieces. In addition, wiring lines are routed such that voltages of opposite phases can be respectively applied to a first input electrode piece group and a second input electrode piece group with the potential of the intermediate electrode serving as a reference.

A piezoelectric device that includes a base member having an opening therein and an upper layer supported by the base member. The upper layer includes a vibration portion at a location corresponding to the opening in the base member. The vibration portion includes a lower electrode, an intermediate electrode and an upper electrode that are spaced apart from one another in a thickness direction of the piezoelectric device. The upper layer includes a first piezoelectric layer disposed so as to be at least partially sandwiched between the lower electrode and the intermediate electrode, and a second piezoelectric layer disposed so as to overlap with the first piezoelectric layer and so as to be at least partially sandwiched between the intermediate electrode and the upper electrode. The first piezoelectric layer and the second piezoelectric layer are different in relative permittivity in the thickness direction of the piezoelectric device.

Piezoelectric device, piezoelectric transformer, and method of manufacturing piezoelectric device

A vibrator in a vibrating gyroscope includes a circular annular portion, a rectangular annular portion, and joining portions. The rectangular annular portion is disposed adjacent to an outer side of the circular annular portion. The joining portions join the circular annular portion and the rectangular annular portion. The rectangular annular portion includes linear beam portions. The joining portions join the circular annular portion and the center portions of the beam portions to each other.

Vibrator and vibrating gyroscope

A weight member includes two sides opposite to each other in an X-axis direction when looked at in a plan view. A vibrating beam includes one end portion connected at one location to a fixation member and the other end portion connected at one location to one of the two sides of the weight member in the X-axis direction when looked at in a plan view. The vibrating beam supports the weight member to be displaceable in the X-axis direction. A holding beam includes one end portion connected at one location to the fixation member and the other end portion connected at one location to the other of the two sides of the weight member opposing to each other in the X-axis direction when looked at in a plan view. The holding beam supports the weight member to be displaceable in the X-axis direction. A driver is disposed on the vibrating beam and vibrates the vibrating beam. A detector is disposed on the vibrating beam and configured to output a detection signal changes according to deformation of the vibrating beam.

Acceleration sensor

An acceleration sensor includes a fixation member, a weight member including a plate with two opposing sides parallel or substantially parallel to an X-direction and two opposing sides parallel to a Y-axis direction in a plan view, the weight member including a cutout extending in a direction about 45&#xb0; relative to the X and Y axis directions, a vibrating beam linearly extending in the direction about 45&#xb0; relative to the X and Y axis directions in the plan view, and one end portion is connected to the fixation member and the other end portion is connected to the weight member, the vibrating beam is partly arranged within the cutout and supporting the weight member to be displaceable in a Z-axis direction, a driver disposed on the vibrating beam and vibrating the vibrating beam, and a detector disposed on the vibrating beam and outputting a detection signal that is changed depending on deformation of the vibrating beam.

A semiconductor crystal body processing method includes providing a semiconductor crystal body, sandwiching the semiconductor crystal body between a pair of conductive pressurizing tools, applying a pulse-like current between the pair of pressurizing tools to heat the semiconductor crystal body to a target temperature equal to or higher than a temperature at which the semiconductor crystal body is plastically deformed by pressurization and lower than its melting point, and applying pressure and a pulse-like current between the pair of pressurizing tools to thereby maintain the temperature of the semiconductor crystal body at the target temperature and mold the semiconductor crystal body into a target shape by plastic deformation.

Semiconductor crystal body processing method and semiconductor crystal body processing device

A vibrator includes first and second circular or substantially circular arc-shaped beam portions, a base end-side weight portion, and a base end-side weight portion joining portion. The end portions of the first and second circular or substantially circular arc-shaped beam portions in an X-axis positive direction face each other across a distance in a Y-axis direction, and the end portions thereof in an X-axis negative direction are joined to each other. The base end-side weight portion is disposed between the first and second circular or substantially circular arc-shaped beam portions. The base end-side weight portion joining portion extends from a joining portion between the first circular or substantially circular arc-shaped beam portion and the second circular or substantially circular arc-shaped beam portion in the X-axis positive direction, and joined to the base end-side weight portion.

In a polarization-independent light control element operable at low voltage, optical waveguides are provided in an X-cut first substrate and control electrodes are disposed thereabove. Optical waveguides are provided in a Z-cut second substrate and control electrodes are disposed thereabove. The control electrodes of the first and second substrates are connected in series to each other in the propagation direction of light. This allows a transverse electric component and a transverse magnetic component to be efficiently controlled because of the incorporation of high electro-optical effects of the optical waveguides of the first substrate on the transverse electric component and high electro-optical effects of the optical waveguides of the second substrate on the transverse magnetic component.

Light control element

A method for adjusting a frequency characteristic of an edge reflection type surface acoustic wave device includes the step of obtaining a frequency characteristic of an edge reflection type surface acoustic wave device having a piezoelectric substrate. The edge reflection type surface acoustic wave device has a pair of edges of the piezoelectric substrate which define a predetermined distance therebetween. The piezoelectric substrate is cut at a position which defines a distance that is shorter than the predetermined distance when a final frequency characteristic of the edge reflection type surface acoustic wave device is to be higher than the obtained frequency characteristic. The piezoelectric substrate is cut at a position which defines a distance that is longer than the predetermined distance when a final frequency characteristic of the edge reflection type surface acoustic wave device is to be lower than the obtained frequency characteristic.

Method for producing an edge reflection type surface acoustic wave device

A surface acoustic wave device includes a Y-cut, X-propagation LiTaOsubstrate, at least one interdigital transducer provided on the LiTaOsubstrate and made of Al or a metal containing Al as a major component, and an SiOfilm provided on the surface of the LiTaOsubstrate so as to cover the interdigital transducer, wherein the thickness Hs of the SiOfilm normalized by the wavelength &#x3bb; of a surface acoustic wave and the cut angle &#x3b8; of the LiTaOsubstrate are set to be in any one of the ranges represented by formulae (1) to (8):in the case of 0.00&#x3c;&#x2266;0.05, 30&#xb0;&#x3c;&#x3b8;&#x3c;36&#xb0;&#x2003;&#x2003;(1)in the case of 0.05&#x3c;&#x2266;0.10, 29&#xb0;&#x3c;&#x3b8;&#x3c;36&#xb0;&#x2003;&#x2003;(2)in the case of 0.10&#x3c;&#x2266;0.15, 28&#xb0;&#x3c;&#x3b8;&#x3c;36&#xb0;&#x2003;&#x2003;(3)in the case of 0.15&#x3c;&#x2266;0.20, 27&#xb0;&#x3c;&#x3b8;&#x3c;36&#xb0;&#x2003;&#x2003;(4)in the case of 0.20&#x3c;&#x2266;0.25, 26&#xb0;&#x3c;&#x3b8;&#x3c;36&#xb0;&#x2003;&#x2003;(5)in the case of 0.25&#x3c;&#x2266;0.30, 25&#xb0;&#x3c;&#x3b8;&#x3c;35&#xb0;&#x2003;&#x2003;(6)in the case of 0.30&#x3c;&#x2266;0.35, 23&#xb0;&#x3c;&#x3b8;&#x3c;34&#xb0;&#x2003;&#x2003;(7)in the case of 0.35&#x3c;&#x2266;0.40, 21&#xb0;&#x3c;&#x3b8;&#x3c;31&#xb0;&#x2003;&#x2003;(8)

Surface acoustic wave device

An edge reflection surface acoustic wave filter includes IDTs disposed on a top surface of a piezoelectric substrate, and surface acoustic waves of the Shear Horizontal type are reflected between opposite edges. At least one outermost electrode finger in the direction of propagation of surface acoustic waves on the side of at least one of the edges is removed. Accordingly, desired filter characteristics can readily be achieved without causing variations in filter characteristics, spurious components at frequencies lower than the passband are minimized, and selectivity is greatly improved.

Edge-reflection surface acoustic wave filter

An end-surface reflection type surface acoustic wave filter is capable of increasing an attenuation amount outside a pass band while insertion loss characteristics are not seriously deteriorated. The filter is a longitudinally coupled resonator type surface acoustic wave filter using an SH type surface acoustic wave, which has first and second grooves formed in a piezoelectric substrate at the top surface thereof so as to be substantially parallel to each other and spaced from each other by a predetermined distance. In addition, IDTs which are provided between the grooves for defining the longitudinally coupled resonator type surface acoustic wave filter, reflection end-surfaces disposed on side surfaces of the first and the second grooves at the IDT sides, and one of a resin-coating layer and a protective layer made of SiO , are provided on the top surface of the piezoelectric substrate. The resin-coating layer is arranged to cover at least a region at which the IDTs are located and at least one of the first and the second grooves so as to intrude into one of them, and the protective layer is arranged so as to cover the IDTs.

End-surface reflection type surface acoustic wave filter

A longitudinally coupled resonator-type surface acoustic wave device includes interdigital transducers including a plurality of electrode fingers disposed along the propagation direction of a surface acoustic wave on a surface acoustic wave device. An electrically discontinuous portion is provided in a central portion, in the finger overlap direction, in adjacent electrode fingers in adjacent interdigital transducers, and at least one floating electrode is disposed in the finger overlap direction in the electrically discontinuous portion.

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Nagaokakyo, Japan

Hideya Horiuchi