Oki Electric Industry Co., Ltd.

Hidetoshi Wakamatsu

Norio Tanaka

Hiroshi Ogata

Mikio Matsuki

The method is intended to detect with high sensitivity and high accuracy chemically contaminating impurities in which there exist chemically contaminating impurity constituents of basic series, acidic series, and organic substance series, in gaseous and particle states, and constituents of compounds thereof, contained in air inside a clean room, as constituents having every property. To this end, ions composed of various cations and anions, constituting the chemically contaminating impurities in fine particle, gaseous, or molecular state, are caused to continuously undergo dissolution reaction and dissociation reaction in a solution in sequence from those constituting salts having strong solubility or strong dissociative tendency.

Method of collecting chemically contaminating impurity constituents contained in air

A method for removing impurity substances in air flowing in a flow passage includes filtering the air in a first filter for removing solid substances; cooling the air in a first cooler to not higher than its dew-point temperature; capturing gaseous substances in the air in a wet-type impurity removing apparatus; cooling the air in a second cooler; and filtering in a second filter. The wet-type impurity removing apparatus includes a first liquid atomizer having two pluralities of nozzle ports for spraying, arranged mutually spaced apart and facing each other in the direction of the air flow passage; first and second condensing and capturing assemblies located across the first atomizer and spaced apart from each other, with the first assembly being upstream and the second assembly being downstream from the first atomizer; a second atomizer for capturing any remaining gaseous substances in the air; and a third condensing and capturing assembly.

Method for removing impurity contents in the air

An apparatus for removing impurity substances in the air includes a first filter for removing solid substances in the air flowing in a flow passage defined by a housing; a first cooler for cooling the air to not higher than its dew-point temperature; a wet-type impurity removing mechanism for capturing gaseous substances in the air; a second cooler; and a second filter. The wet-type impurity removing mechanism includes a first liquid atomizer having a plurality of nozzle ports for spraying, arranged mutually spaced apart and facing each other in the direction of the air flow passage; first and second condensing and capturing assemblies located across the first atomizer and spaced apart from each other, with the first condensing and capturing assembly being upstream and the second condensing and capturing assembly being downstream from the first atomizer; a second atomizer for capturing any remaining gaseous substances in the air; and a third condensing and capturing assembly.

Apparatus for removing impurity contents in the air

A pair of jet nozzles are constructed for vapor-liquid contact removal in a gaseous molecule impurity removal apparatus, with one of the nozzles producing a counter flow to an upstream direction and the other nozzle producing a flow parallel to a downstream flow, the pair of nozzles being so disposed as to be joined together in a counter flow system. The counter flow nozzles are arranged alternatively so that they are not opposite each other. Also, a three stage eliminator structure is provided, and air that has been processed once is fed back to a central eliminator.

Airborne molecular contaminant removing apparatus

Method for making a semiconductor device by doping with arsenic, of at

A method for forming a smooth borophosphosilicate glass film on a semiconductor substrate is described, in which a semiconductor substrate having at least one stepped portion thereon is formed with one side of the substrate a borophosphosilicate glass layer having a defined boron content and a defined phosphorus content with a defined total content of the boron and phosphorus. The layer is subjected to thermal treatment under conditions of a temperature of not lower than 940.degree. C. and a time of not shorter than 15 minutes in an atmospheric gas supplied at a flow rate of not lower than 19 liters/minute. As a result, the BPSG glass layer is smoothed on the surface thereof without formation of undesirable grains on the surface. This thermal treatment is particularly suitable for fabrication of a semiconductor element or device using an insulating film of the borophosphosilicate glass.

Method for fabricating a semiconductor device using a BPSG layer

A method of manufacturing a trench filled with an insulation material in a semiconductor substrate which includes the steps of forming a trench in the substrate, subjecting the substrate to an RF bias sputtering to form an oxide layer on the substrate, form a slope at an upper corner of the trench and produce a roundness at a lower corner of the trench, and filling the trench with the insulation material.

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Tokyo, Japan

Hidetoshi Wakamatsu