Kobe Steel, Ltd.

Kobelco Research Institute, Inc.

Shin-etsu Handotai Co., Ltd.

Hidetoshi Tsunaki

Noritaka Morioka

Masato Kannaka

Kazuhiko Tahara

Hideki Matsuoka

Eiji Takahashi

Hisashi Masumura

Hideo Kudo

Shingo Sumie

Masakazu Kajita

Yuji Hirao

Takuya Atsumi

A shape measurement device and a shape measurement method according to the present invention measure, for first and second distance measurement units which are disposed so as to be opposed to each other with a measurement object to be measured interposed therebetween and each measure a distance to the measurement object, first and second displacements of the first and second distance measurement units in an opposition direction, and obtain, as a shape of the measurement object, a thickness of the measurement object in the opposition direction, the thickness being corrected with the measured first and second displacements, based on first and second distance measurement results measured by the first and second distance measurement units, respectively.

Shape measurement device and shape measurement method

A shape determining device includes first and second homodyne interferometers respectively provided for front and back surfaces of an object to be measured and a thickness distribution calculator that calculates a thickness distribution of the object based on intensities of first and second interference light beams respectively detected by the first and second homodyne interferometers for the front and back surfaces of the object at a plurality of measurement sites. The thickness distribution calculator calculates, for each interference light beam for which the intensity is detected by the first and second homodyne interferometers, a phase difference between the polarization components of a corresponding reference light beam and a corresponding object light beam in a corresponding non-interference light beam based on the intensity of the interference light beam, and calculates the thickness distribution based on a distribution of the calculated phase differences.

Shape determining device

The invention seeks to permit evaluation of edge portion of like inclined surfaces of wafer with high accuracy without the conventional destruction process based on the selective etching process but with the contact-free, non-destructive and high accuracy optical acoustical process. To this end, the invention features determination of residual damages as crystal damages caused to wafer edge in an optical acoustical process, which comprises the steps of causing a measurement probe to face each of three exciting laser beam irradiation points on upper and lower inclined surfaces and at an accurate end of an edge portion of a semiconductor wafer, and determining a thermal response induced by the exciting laser beam by a laser interference process.

Method of and apparatus for determining residual damage to wafer edges

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Kobe, Japan

Hidetoshi Tsunaki