Sumitomo Electric Industries, Limited

Hidetoshi Takayama

Yukio Ishikawa

Yoshiaki Hagi

Yasuaki Higuchi

Masanori Morishita

Shuuichi Kaneko

Hirokazu Oota

A gallium arsenide single crystal including a straight body portion having a cylindrical shape, wherein a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumferential surface located 10 mm inward from an outer circumferential surface of the straight body portion toward a central axis and a location located 5 mm inward from the outer circumferential surface. There is a gallium arsenide single crystal substrate, wherein a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumference located 10 mm inward from an outer circumference toward a center and a location located 5 mm inward from the outer circumference.

Gallium arsenide single crystal and gallium arsenide single crystal substrate

A gallium arsenide crystal substrate has a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 300 &#x3bc;m and not greater than 800 &#x3bc;m and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of silicon is not lower than 3.0&#xd7;10cmand not higher than 3.0&#xd7;10cm, the gallium arsenide crystal substrate has an average dislocation density not lower than 0 cmand not higher than 15000 cm, and when an atomic concentration of carbon is not lower than 1.0&#xd7;10cmand not higher than 5.0&#xd7;10cm, the gallium arsenide crystal substrate has an average dislocation density not lower than 3000 cmand not higher than 20000 cm.

Gallium arsenide crystal substrate

A GaAs-based compound semiconductor crystal includes a straight body portion having a cylindrical shape, wherein the straight body portion has a diameter of more than or equal to 110 mm and has a length of more than or equal to 100 mm and less than or equal to 400 mm, and the straight body portion has a first end surface and a second end surface having a higher specific resistance than a specific resistance of the first end surface, and a ratio R/Rof a specific resistance Rat the second end surface side to a specific resistance Rat the first end surface side is more than or equal to 1 and less than or equal to 2.

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Kobe, Japan

Hidetoshi Takayama