Hitachi, Ltd.

Renesas Technology Corp.

Hidetoshi Satoh

Yoshinori Nakayama

Yasunari Sohda

Yasuhiro Someda

Masahide Okumura

Hiroyuki Ito

Toshihiko Tanaka

Hiroshi Shiraishi

Norio Hasegawa

Takashi Hattori

Norio Saitou

Yasuko Gotoh

Koji Nagata

Haruo Yoda

Hiroshi Tsuji

Hiroya Ohta

Kunio Harada

Hiroyuki Itoh

Hiroyuki Takahashi

Genya Matsuoka

Teruyuki Kagami

Mitsuo Tanabe

Niro Katane

Sakae Yaita

To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.

Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method

Method and apparatus for charged particle beam exposure

A method of manufacturing an electron device provided with minute structure such as a semiconductor integrated circuit using projection exposure technique and phase shift mask technique, maintaining a high yield is disclosed. In an electron device manufacturing method according to the invention, a desired electron device is manufactured by printing a light shielding film pattern on a photosensitive film provided on the surface of a workpiece by a projection tool using a mask where a phase shifter having predetermined thickness is partially formed on the flat surface of a transparent plate and a light shielding film having a predetermined pattern and made of non-metal is partially provided with the film covering the end of the shifter and developing the photosensitive film. Further, concretely, the above pattern is printed using a mask where the light shielding film made of non-metal is partially extended on the surface of the shifter and the transparent plate including the end of the shifter by the projection tool. According to the electron device manufacturing method according to the invention, an electron device provided with minute structure can be precisely manufactured maintaining a high yield.

Electron device manufacturing method, a pattern forming method, and a photomask used for those methods

In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

Charged particle beam lithography apparatus for forming pattern on semi-conductor

An electron beam lithography system to conduct drawing on a sample with an electron beam within a first chamber. A second chamber is provided which is separated from the first chamber and has a volume smaller than that of the first chamber. A member is provided which is capable of placing the sample on a part separable from an X-Y stage within the first chamber and moving the separable part with the sample thereon to a position for drawing on the sample with the electron beam within the first chamber. A loading arrangement is provided for removing the separable part and the sample from the X-Y stage and moving the separated part to the second chamber from the first chamber. The separable part of the X-Y stage is independently removable from the sample and from the second chamber to outside of the second chamber.

Electron beam lithography system

In order to provide a high-speed and high accuracy cell projection exposure apparatus which greatly increases a pattern projection speed, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil masks with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

Method of fabricating semiconductor circuit devices utilizing multiple

Charged particle beam lithography apparatus for forming pattern on

Growing community of inventors

Kodaira, Japan

Hidetoshi Satoh