Toyota Jidosha Kabushiki Kaisha

Renesas Electronics Corporation

Hidetoshi Morishita

Masaki Wasekura

Masayuki Furumiya

Shinichi Uchida

Yoshiyuki Sato

Hikaru Watanabe

Jun Morimoto

Kozo Kato

Masato Taki

Takashi Iwadare

Hideo Yamawaki

Hiroshi Sakakibara

Makoto Eguchi

Yuu Suzuki

A gate potential control device configured to control potential of a gate of a main switching element is provided herein. The gate potential control device includes: a turn-on switching element and a turn-off switching element. In a turn-off operation, a main voltage between main terminals of the main switching element increases from an on-voltage to a peak value of a surge voltage and then decreases to an off-voltage. The gate potential control device is configured to keep both of the turn-on switching element and the turn-off switching element turned off in a period which is at least a part of a specific period in the turn-off operation, the specific period being from a timing after a predetermined time lapse from a timing of rise-up of the main voltage from the on-voltage to a timing at which the main voltage reaches the peak value.

Gate potential control device

A signal transmitting apparatus using a plane coil for a sending coil and a receiving coil respectively, so that the outer diameters of the sending coil and the receiving coil can be decreased, and a signal can be stably transmitted from a sending side to a receiving side. The signal transmitting apparatus is provided with: a sending coil driven by an inputted signal; a receiving coil configured to output a received signal in response to the sending coil being driven; a pre-processing circuit to which the received signal outputted by the receiving coil is inputted; and a detecting circuit configured to detect the inputted signal from a signal outputted by the pre-processing circuit.

Signal transmitting apparatus

A signal transmitting apparatus that may suppress generation of a noise voltage attributable to a common mode voltage is provided. A transistor Pis connected between a first terminal of a sending coil and a power supply voltage. A transistor Nis connected between the first terminal and a ground voltage. A transistor Pis connected between a second terminal of the sending coil and the power supply voltage. A transistor Nis connected between the second terminal and the ground voltage. In a period-PEa coil current flowing in a positive direction is generated by turning on the transistors Pand Nand turning off the transistors Pand N, and then the transistor Nis turned on in response to turning off the transistor P. In a period PE, a coil current flowing in a negative direction is generated by turning off the transistors Pand Nand turning on the transistors Pand N, and then the transistor Nis turned on in response to turning off the transistor P

A first semiconductor chip includes a first inductor and a second inductor, and a second semiconductor chip includes a third inductor and a fourth inductor. The first inductor is connected to a first receiving circuit of the first semiconductor chip, and the second inductor is connected to a second transmitting circuit of the second semiconductor chip through a first bonding wire. The third inductor is connected to a second receiving circuit of the second semiconductor chip, and the fourth inductor is connected to a first transmitting circuit of the first semiconductor chip through a second bonding wire.

Semiconductor device

A driving device of an IGBT includes a high potential side switch device group having a plurality of switch devices and, one end of each switch device being connected to a high potential side; a low potential side switch device group having a plurality of switch devices and, one end of each switch device being connected to a low potential side; an drive type selective input terminal to which a drive type selection signal corresponding to drive type of the IGBT connected to the driving device is inputted; a direct drive type control unit and an indirect drive type control unit generating a control signal controlling complementarily the high potential side switch device group and the low potential side switch device group corresponding to the drive type of the IGBT; and a selector selecting the control signal controlling the high potential side switch device group and the low potential side switch device group corresponding to an inputted drive type selection signal.

Driving device of voltage drive type semiconductor device

Growing community of inventors

Takahama, Japan

Hidetoshi Morishita