Kabushiki Kaisha Toshiba

Toyo Seikan Kaisha, Ltd.

Hidetoshi Koike

Hiroshi Tsurumi

Tomoya Sanuki

Tomoo Utsumi

Nobuaki Yoshitake

Yusuke Kohyama

Kazunari Ishimaru

Fumitomo Matsuoka

Kazuyuki Kurosawa

Tsutomu Iwasaki

Ken Takenouchi

Hiroshi Gojohbori

Yoshihiko Kimura

Mitsuo Tanioka

Katsumi Senbon

According to one embodiment, a semiconductor image pickup device includes a pixel area and a non-pixel area. The device includes a first photoelectric conversion element formed in the pixel area, a first transistor formed in the pixel area and connected to the first photoelectric conversion element, a second photoelectric conversion element formed in the non-pixel area, a second transistor formed in the non-pixel area and connected to the second photoelectric conversion element, a metal wire formed at least in the non-pixel area, a first cap layer formed on the metal wire to prevent diffusion of metal contained in the metal wire, and a dummy via wire formed in the non-pixel area and penetrating the first cap layer.

Semiconductor image pickup device

According to one embodiment, an interface control apparatus includes an interface, a table, a command processor, and a controller. The interface transmits and receives information to and from a host. The table holds management information for managing an address in a memory space in the host. The command processor carries out a command process of accessing the memory space in the host using the management information. The controller releases the management information corresponding to the command process from the table in response to completion of the command process.

Interface control apparatus, data storage apparatus and interface control method

According to one embodiment, in a semiconductor device, a semiconductor substrate has a first surface and a second surface which is opposed to the first surface. An insulating layer is provided on the first surface of the semiconductor substrate. A metal wiring is provided within the insulating layer. A support substrate is bonded to the insulating layer. A poly silicon electrode is connected to the metal wiring through a contact. A pad is provided on the second surface of the semiconductor substrate and is connected to the poly silicon electrode through a metal film deposited in a via-hole to penetrate the semiconductor substrate and extend to the poly silicon electrode.

Semiconductor device and method of manufacturing the same

According to one embodiment, an interface control apparatus includes an interface, and a controller. The interface is configured to transmit information between a host and a data storage apparatus. The controller is configured to fetch request information making a processing request for the data storage apparatus, from an element being a storage unit of a queue provided on the host through the interface. The controller is configured to execute read request processing of fetching first request information divided into a plurality of elements and stored, with priority over second request information which is different from the first request information, when the request information is fetched.

Interface control apparatus, data storage apparatus and method for interface control

According to one embodiment, a solid-state imaging device includes a photodiode includes an N-type region and a P-type region, a floating diffusion region, and a transfer transistor. The N-type diffusion region of the photodiode comprises a first semiconductor region and a second semiconductor region formed shallower than the first semiconductor region. An end portion of the first semiconductor region is positioned on the floating diffusion region side rather than an end portion of a gate electrode of the transfer transistor. An end portion of the second semiconductor region is set in substantially the same position as that of the end portion of the gate electrode of the transfer transistor.

Solid-state imaging device and manufacturing method thereof

Photoelectric conversion elements are arranged in a pixel area. A circuit area is arranged around the pixel area. An interconnect including copper is arranged in the pixel area and circuit area. A cap layer is arranged on the interconnect. Wherein the cap layer except a part on the interconnect is removed from the pixel area and circuit area.

Semiconductor imaging device with which semiconductor elements of pixel area and other areas has same characteristics

According to one embodiment, a solid-state imaging device includes a semiconductor layer including first and second regions, a pixel portion provided in the first region, electrodes provided in the second region and configured to penetrate the semiconductor layer, and a guard ring provided in the second region and configured to penetrate the semiconductor layer and electrically isolate the pixel portion from the electrodes. An upper surface of the semiconductor layer in the second region is lower than an upper surface of the semiconductor layer in the first region.

According to one embodiment, a solid state imaging device includes a pixel region to be used for generating pixels, a black reference region provided outside the pixel region, and a dummy region provided between the black reference region and the pixel region, and including a light shielding pattern configured to shield the black reference against light coming from the pixel region.

Solid state imaging device including a pixel region, a black reference region, and a dummy region

According to one embodiment, a solid-state imaging device includes a semiconductor substrate of a first conductive type having a diffusion layer region provided on a surface thereof, a diffusion layer of the first conductive type for a pixel separation whose bottom portion is formed at the deepest position of the diffusion layer region in a pixel region, and a first deep diffusion layer of the first conductive type provided at the deepest position of the diffusion layer region in a first peripheral logic region for electrically connecting the semiconductor substrate and the first peripheral logic region and having a first concentration gradient equal to that of the diffusion layer for pixel separation.

A semiconductor device includes an alignment mark which is arranged adjacent to each corner of a semiconductor chip, and a plug which contacts the alignment mark. The alignment mark is formed by part of the uppermost interconnection layer in a multilevel interconnection which is formed on the semiconductor chip and obtained by stacking low-permittivity insulating layers and interconnection layers. The plug is buried in a contact hole formed in the low-permittivity insulating layer below the alignment mark, and contacts the alignment mark.

Semiconductor device with a multilevel interconnection connected to a guard ring

A pixel area for generating an image signal corresponding to incident light is formed on a semiconductor substrate. A light-shielding layer is formed on the semiconductor substrate around the pixel area. The light-shielding layer has a slit near the pixel area and shields the incident light. A passivation film is formed in the pixel area, on the light-shielding layer, and in the slit. A coating layer is formed in the slit of the light-shielding layer and on the passivation film in the pixel area. Microlenses are formed on the coating layer in the pixel area.

Semiconductor device having image sensor

A semiconductor device includes a semiconductor substrate, a back side drawn electrode formed by embedding a first conductive material in a contact hole penetrating the semiconductor substrate through an insulating film formed to include a uniform thickness, used also as an alignment mark, and configured to draw out an electrode to the back side of the semiconductor substrate. The device further includes a pad provided on the back side of the semiconductor substrate, and connected to the back side drawn electrode.

Growing community of inventors

Yokohama, Japan

Hidetoshi Koike