Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Hidetoshi Kitaura

Akio Furusawa

Atsushi Tanaka

Naomi Nishiki

Kiyohiro Hine

Kimiaki Nakaya

Kazuhiro Nishikawa

Taichi Nakamura

Shigeaki Sakatani

Takahiro Matsuo

Kazuki Sakai

Masaki Yoshida

Yukihiro Ishimaru

Masato Mori

Shinnosuke Akiyama

Honami Nawa

Shigeki Sakaguchi

Katsufumi Shimanaka

Akiyoshi Azechi

Henrik Rønnow

A mounting structure is used, which includes: a semiconductor element including an element electrode; a metal member; and a sintered body configured to bond the semiconductor element and the metal member is used, in which the sintered body contains a first metal and a second metal solid-dissolved in the first metal, the second metal is a metal having a diffusion coefficient in the first metal larger than a self-diffusion coefficient of the first metal, and a content ratio of the second metal relative to a total mass of the first metal and the second metal in the sintered body is equal to or lower than a solid solution limit of the second metal to the first metal.

Mounting structure and nanoparticle mounting material

A jointing material includes: at least one type of element at 0.1 wt % to 30 wt %, the element being capable of forming a compound with each of tin and carbon; and tin at 70 wt % to 99.9 wt % as a main component.

Jointing material, fabrication method for semiconductor device using the jointing material, and semiconductor device

A solder alloy, includes: about 3 wt % to about 15 wt % of Sb; about 0.01 wt % to about 1.5 wt % of Te; and about 0.005 wt % to about 1 wt % of at least one element selected from the group consisting of Zn, Co, and Cr; and a balance of Sn.

Solder alloy and junction structure using same

Provided is a graphite plate, consisting essentially of: graphite; and pores, wherein said graphite plate has a porosity from 1% to 30%. Further provided is a method for producing a graphite plate, including: applying welding pressure to at least one glass-like carbon material in a state in which said at least one glass-like carbon material is maintained in an inert atmosphere under heating conditions, to produce a graphite plate having a porosity from 1% to 30%.

Graphite plate and production method thereof

There is provided a solder alloy in which 0.5 mass % or more and 1.25 mass % or less of Sb, In satisfying the following formula (I) or (II) when [Sb] is set as a Sb content percentage (mass %) and [In] is set as an In content percentage (mass %): in a case of 0.5&#x2264;[Sb]&#x2264;1.0, 5.5&#x2264;[In]&#x2264;5.50+1.06[Sb] . . . (I), in a case of 1.0&#x3c;[Sb]&#x2264;1.25, 5.5&#x2264;[In]&#x2264;6.35+0.212[Sb] . . . (II) (in the formula, [Sb] indicates a Sb content percentage (mass %) and [In] indicates an In content percentage (mass %)), 0.5 mass % or more and 1.2 mass % or less of Cu, 0.1 mass % or more and 3.0 mass % or less of Bi, 1.0 mass % or more and 4.0 mass % or less of Ag, and 0 mass % or more and 0.025 mass % or less of Co are contained, and has the remainder consisting essentially of Sn.

Solder alloy and package structure using same

A mount structure having a joining capable of withstanding development of cracks generated by thermal stress due to repeated temperature changes in a mount structure having the joining of a large area is formed by joining a ceramic substrate electrode of a ceramic substrate and a metal substrate electrode of a metal substrate by a laminate, in which the laminate is formed by stacking a first interface layer, a first solder joining portion, a second interface layer, a first buffer material electrode, a buffer material, a second buffer material electrode, a third interface layer, a second solder joining portion and a fourth interface layer in this order from the ceramic substrate electrode toward the metal substrate electrode, a thickness of the laminate is 30 &#x3bc;m or more and 100 &#x3bc;m or less, a difference between a thickness of the first solder joining portion and a thickness of the second solder joining portion is within 25%, and differences in elastic moduli and in linear expansion coefficients between the first solder joining portion and the buffer material are respectively within 62%.

Mount structure

A solder alloy of the disclosure includes Sb of which a content is in a range of 3 wt % to 30 wt %, Te of which a content is in a range of 0.01 wt % to 1.5 wt %, Au of which a content is in a range of 0.005 wt % to 1 wt %, at least one of Ag and Cu, wherein a content rate of at least one of Ag and Cu in the solder alloy is in a range of 0.1 wt % to 20 wt %; and a content rate of a sum of Ag and Cu in the solder alloy is in a range of 0.1 wt % to 20 wt %; and a balance of Sn.

Solder alloy and bonded structure using the same

A graphite material has a flexible part and can be utilized as a heat-conveying material in a narrow space. The graphite material, includes: at least one heat-conveying part; and a flexible part. A method for producing a graphite material, includes: (i) subjecting at least one film serving as a material to a heat treatment to obtain at least one carbonaceous film; (ii) providing a monolayer or multilayer structure including the at least one carbonaceous film; and (iii) applying heat and pressure to at least one part of the monolayer or multilayer structure in an inert atmosphere.

Graphite material and production method thereof

A graphite-silicon composite, including: graphite; silicon; and an intermediate layer that is located between the graphite and the silicon, wherein the intermediate layer includes oxygen, carbon and silicon. Furthermore, provided is a method for producing a graphite-silicon composite, including: layering graphite and silicon; and heating the layered graphite and silicon while applying pressure to them, wherein, during heating the layered graphite and silicon while applying pressure to them, an oxygen concentration in the atmosphere is adjusted to 0.2 vol %, the applied pressure is adjusted to 24.5 MPa or higher, and the heating temperature is adjusted to 1260&#xb0; C. or higher.

Graphite-silicon composite and production method thereof

A mount structure includes two members that are bonded to each other with a bonding material layer having a first interface layer and a second interface layer at the interfaces with the two members. The bonding material layer contains a first intermetallic compound and a stress relaxation material. The first intermetallic compound has a spherical, a columnar, or an oval spherical shape, and the same crystalline structure as the first interface layer and the second interface layer, and partly closes the space between the first interface layer and the second interface layer. The stress relaxation material contains tin as a main component, and fills around the first intermetallic compound.

Mount structure including two members that are bonded to each other with a bonding material layer having a first interface layer and a second interface layer

The clothing having a frontal land and a rear land includes: a thermal storage unit provided on at least one portion of the frontal land of the clothing; and a planar thermoconductive sheet located in a planar between the frontal land and the rear land, the planar thermoconductive sheet having a thermal conduction path to the thermal storage unit, and the planar thermoconductive sheet being higher in thermoconductivity than the frontal land and the rear land. The planar thermoconductive sheet includes a resin component and graphite particles. Basal plane of each graphite particle is parallel to the direction of the plane of the planar thermoconductive sheet.

Clothing having cooling function or warming function

A mounting structure includes a BGA including a BGA electrode, a circuit board including a circuit board electrode, and a solder joining portion which is arranged on the circuit board electrode and is connected to the BGA electrode. The solder joining portion is formed of Cu having a content ratio in a range from 0.6 mass % to 1.2 mass %, inclusive, Ag having a content ratio in a range from 3.0 mass % to 4.0 mass %, inclusive, Bi having a content ratio in a range from 0 mass % to 1.0 mass %, inclusive, In, and Sn. A range of the content ratio of In is different according to the content ratio of Cu.

Mounting structure and BGA ball

A solder alloy is substantially Ag-free and has desirable neat-resistance fatigue characteristics in a high-temperature environment as high as 150&#xb0; C., even when used for soldering of electronic components having no leads. The solder alloy contains Sb, In, Cu, and Bi, and Sn accounting for the remainder, and satisfies the following formulae:0.5&#x2264;[Sb]&#x2264;1.250.66[Sb]+4.16&#x2264;[In]&#x2264;6.00.5&#x2264;[Cu]&#x2264;1.20.1&#x2264;[Bi]&#x2264;0.5,wherein [Sb], [In], [Cu], and [Bi] represent the contents of Sb, In, Cu, and Bi, respectively, in mass %.

Solder alloy and mounted structure using same

A dispersion of suspended single-layer graphene, multilayer graphene, and graphite is used. A magnetic field is applied to the dispersion to separate the single-layer graphene from the dispersion. By applying the magnetic field, the single-layer graphene, the multilayer graphene, and the graphite are situated at different locations in solvent by the difference in the diamagnetism strengths of the single-layer graphene, the multilayer graphene, and the graphite.

Method for producing graphene

A heat conductor includes a first layer containing a first resin component and first flake graphite fillers each having a basal plane; and a second layer containing a second resin component and second flake graphite fillers each having a basal plane. The heat conductor is a laminate including the first layer and the second layer, an average of first angles in the first layer is 35 degrees or smaller, each of the first angles is an acute angle between the basal plane of a corresponding one of the first flake graphite fillers and a first laminated surface of the laminate, an average of second angles in the second layer ranges from 55 degrees to 90 degrees, and each of the second angles is an acute angle between the basal plane of a corresponding one of the second flake graphite fillers and a second laminated surface of the laminate.

Growing community of inventors

Osaka, Japan

Hidetoshi Kitaura