Fujifilm Corporation

Fuji Photo Film Company, Limited

Sony Corporation

Fuji Xerox Co., Ltd.

Other

Hidetoshi Kawasaki

Kenji Yao

Fumiyuki Suzuki

Kazunori Mizuno

Masahiro Moriyama

Tadashi Mochizuki

Mitsuhiro Nakamura

Seiichi Takagi

Tetsuya Takatori

Masayuki Okoshi

Masaru Wada

Takeshi Miyato

Ichiro Hase

Ayato Sato

Noriaki Maida

Nobuo Sugiyama

Shinichi Wada

Chiaki Takano

Takahiro Ohgihara

Takashi Mitsuyasu

Ken Shimizu

An image recording method includes a step of preparing a first ink containing water and at least one selected from the group consisting of a chromatic colorant and a black colorant, a step of preparing a second ink containing a white colorant and water, an applying step of applying each of the first ink and the second ink onto a resin base material by an ink jet method, and a drying step of including irradiating the first ink and the second ink applied onto the resin base material with microwaves.

Image recording method

A resin composition, includes: an aliphatic polyester; a second polymer compound having a glass transition point higher than a glass transition point of the aliphatic polyester; and aluminum phosphate.

Resin composition, resin compact, production method of resin compact and recycling method of resin compact

A resin composition includes an aliphatic polyester; a second polymer compound other than the aliphatic polyester; and an organic phosphoric acid compound that has a phosphorus content of about 20% by mass or more.

Resin composition, resin mold and method for producing the same

A fabric material has a base fabric, a pile layer on a surface of the base fabric, and an adhesive layer of a hot-melt adhesive on another surface of the base fabric. The adhesive layer contains a wax whose melting point Tm1 is from 20&#xb0; C. to 50&#xb0; C. lower than the melting point Tm2 of the base polymer. The fabric material is heated by a heating device to at least (Tm1+5)&#xb0; C. and (Tm2&#x2212;5)&#xb0; C., and then cut by a ultrasonic wave cutter. Thus the fabric material can be cut without generating the chaffs of the adhesive agent and the fiber offscums. As a result, the pollution is not made in the cutting process, and the cutting of the fabric material is made continuously and stably. Without the adhesion of the chaffs, the teremp which has a good surface formed by the cutting.

Cutting method of fabric material

A cartridge is composed of a cartridge body and a shutter. A hologram recording disk is rotatably contained in a disk recess formed in the cartridge body. The shutter comprises upper and lower shutter plates between which the cartridge body is interposed. The shutter opens and closes openings formed in both surfaces of the cartridge body. When the shutter is kept in a closed position where the openings are closed, the edges of the shutter are inserted into slits formed around the opening. Further, a groove is formed at an end portion of the shutter. Into the groove, a ridge formed on the cartridge body is inserted.

Cartridge for photosensitive recording medium

A photographic film cartridge includes a light-shielding cloth. The light-shielding cloth is subjected to napping with a coarse napping machine and then napping with a fine napping machine. The napping machines have napper rollers including a pile roller and a counter roller. The rotational speed of the pile roller of the fine napping machine is higher than that of the pile roller of the coarse napping machine, and the rotational speed of the counter roller of the coarse napping machine is higher than that of the counter roller of the fine napping machine. The napping is carried out so that the cloth thickness obtained by the fine napping machine is less than the cloth thickness obtained by the coarse napping machine. A further napping is carried out using the fine napping machine so that the cloth thickness is greater than that obtained by the coarse napping machine.

Photographic film cartridge

A semiconductor device that is easily operated with a single positive voltage supply and exhibits an excellent linearity of mutual conductance and source-gate capacitance with regard to a gate voltage is provided. The semiconductor device comprises a second barrier layer of AlGaAs, a channel layer of InGaAs and a first barrier layer of AlGaAs that are stacked in this order on a substrate of GaAs with a buffer layer of u-GaAs between the substrate and the second barrier layer. Carrier supply regions doped with n-type impurity are formed in part of the first and second barrier layers. A low resistivity region including a high concentration of p-type impurity (Zn) is formed in the first barrier layer. The low resistivity region is buried in a high resistivity region and brought to contact with a gate electrode. Upon an application of positive voltage to the gate electrode, a carrier deficient region disappears in the channel layer and no parasitic resistance component remains.

Semiconductor device

For suppressing generation of leakage current and side-gate effect in a junction field effect transistor, a gate extension is formed on a semi-insulative compound semiconductor substrate in a manner to extend from a gate and to protrude outward beyond a channel transversely thereto, and an insulating layer is formed on the semi-insulative compound semiconductor substrate under the gate extension. A method of producing this transistor comprises the steps of first forming a channel and a source-drain on a substrate, then forming a gate on the channel together with a gate extension which extends from the gate and protrudes outward beyond the channel transversely thereto, and forming an insulating layer adjacently to the channel and the source-drain in such a manner that no gap is existent between the insulating layer and at least the channel.

Junction field effect transistor and method of producing the same

A transistor-bias voltage stabilizing circuit comprises a current saturating resistor connected in series to the output of an FET, the gate bias voltage of which is to be stabilized and a capacitor connected in parallel to the current saturating resistor. The transistor-bias voltage stabilizing circuit may comprise a voltage detecting circuit and a negative-feedback circuit connected between the input and output of an FET, the gate bias voltage of which is to be stabilized.

Bias circuit

A photo film cassette has a spool on which photo film is wound. A cassette shell contains the spool in rotatable fashion. A pair of light-trapping ribbons are respectively mounted inside a photo film passage port in the cassette shell, and prevents ambient light from entering the cassette shell through the passage port. The ribbons are constituted of warp pile fabric woven in a needle loom from warp threads, weft threads, and warp pile threads. A first one of the weft threads is passed under a first one of the warp threads, then passed over a first one of the warp pile threads, and subsequently passed under a second one of the warp threads. The pile fabric is woven so as to symmetrize the first and second warp threads relative to the first warp pile thread. It follows that the ribbons are woven to have the firmly retained warp pile threads that are difficult to drop away from the ribbons.

Photo film cassette having light trapping ribbons in which pile threads

Light-trapping members are cut out of a ribbon consisting of a base fabric and piles. The piles of the ribbon are pressed against the peripheral surface of a thermal drum to be inclined in the width direction after the ribbon is passed through and twisted by a twister disposed close to the thermal drum. The light-trapping members with inclined piles are attached to a film passage mouth of a self-advancing-type photographic film cassette with the inclination of the piles directed to the outside of the film passage mouth, so that the leading end of a photographic film can be advanced smoothly by rotation of a spool through the light-trapping members to the outside of the cassette.

Growing community of inventors

Kanagawa, Japan

Hidetoshi Kawasaki