Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Sumitomo Electric Industries, Limited

Sumitomo Wiring Systems, Limited

Autonetworks Technologies, Limited

Hidetoshi Ishida

Daisuke Ueda

Yusuke Kinoshita

Tsuyoshi Tanaka

Tetsuzo Ueda

Takashi Ichiryu

Yasuhiro Uemoto

Hiroaki Ueno

Manabu Yanagihara

Masanori Nomura

Yasuhiro Yamada

Tatsuo Morita

Masahiro Hikita

Tohru Nakagawa

Akio Matsushita

Akihiro Itoh

Ryusuke Kanomata

Satoshi Yamamoto

Daisuke Shibata

Masayuki Kuroda

Manabu Inoue

Hiroyoshi Maesoba

Tetsuji Tanaka

Tomohiro Murata

Hidetoshi Furukawa

Atsushi Noma

Kazuo Miyatsuji

Masami Ono

Hiroyuki Handa

Takahiro Yokoyama

Yorito Ota

Shigeru Morimoto

Yasuyuki Yamamoto

Masahiro Maeda

Satoshi Nakazawa

Yuji Kudoh

Kazuhiro Kaibara

Takashi Uno

Ryosuke Maeda

Motonari Katsuno

Yumiko Kase

A gate drive circuit includes: an input terminal; a first circuit path inserted into a line connecting the input terminal and a gate of a power transistor; a second circuit path connected in parallel to the first circuit path; and a third circuit path connected in parallel to the second circuit path. The first circuit path includes a gate resistor (Rgon). The second circuit path includes a first capacitor and a first resistor connected in series. The third circuit path includes a second capacitor and a second resistor connected in series. The second capacitor has a capacitance value greater than a capacitance value of the first capacitor. The second resistor has a resistance value greater than a resistance value of the first resistor. The gate resistor (Rgon) has a resistance value greater than the resistance value of the second resistor.

Gate drive circuit, and semiconductor breaker

A wiring member includes at least one wire-like transmission member having a zigzag section extending in a zigzag form, and a flexible base material having an arrangement surface. The zigzag section is disposed on the arrangement surface. The base material keeps the zigzag section in a zigzag form.

Wiring member and device with movable part provided with same

A power supply structure 11 for a headrest 10 for supplying power to the headrest 10 attached to a seat body 13 includes: a power supply coil 16 that is located in the seat body 13; a power reception coil 30 that is located in the headrest 10 and receives power from the power supply coil 16; and an elastic member 21 that is located in at least one of the seat body 13 and the headrest 10 and urges the power supply coil 16 and the power reception coil 30 in a direction that approaches each other.

Power supply structure for headrest

A control circuit controls a switching element including a gate and a source corresponding to the gate. The control circuit includes an inductor, a circuit element, and a resistor. The inductor is connected between the gate and the source of the switching element. The circuit element is connected in series to the inductor between the gate and the source. The circuit element allows an electric current to flow therethrough in response to generation of electromotive force in the inductor. The resistor is connected in parallel to the inductor and the circuit element between the gate and the source.

Control circuit and switch device

Provided are a determination device and a switch system capable of suppressing a power loss of a semiconductor switch. Determination device is used for semiconductor switch. Semiconductor switch includes junction field-effect transistor having gate and source corresponding to gate. Determination device includes resistor and determination circuit. Resistor has a first end and a second end. The first end of resistor is connected to gate. Determination circuit determines that overcurrent is flowing through semiconductor switch when there is a predetermined change in gate-source voltage of junction field-effect transistor in a range smaller than gate drive voltage provided between the second end of resistor and source.

Determination device and switch system equipped therewith

A bidirectional switch module includes a plurality of bidirectional switches and a mount board. Each of the plurality of bidirectional switches includes a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode. On the mount board, the plurality of bidirectional switches are mounted. In the bidirectional switch module, the plurality of bidirectional switches are connected in parallel.

Bidirectional switch module and bidirectional switch

A GaN layer is formed over the substrate. An AlGaN layer is formed on the GaN layer. A first source electrode, a first gate electrode, a second gate electrode, and a second source electrode are formed on or over the AlGaN layer. A first p-type AlGaN layer where 0≤x1<1 is interposed between the first gate electrode and the AlGaN layer. A second p-type AlGaN layer where 0≤x2<1 is interposed between the second gate electrode and the AlGaN layer. The substrate is electrically insulated from all of the first source electrode, the second source electrode, the first gate electrode, and the second gate electrode. The bidirectional switch further includes a terminal used to connect the substrate to a fixed potential node. The terminal is connected to the substrate.

Bidirectional switch, electrical device, and multi-level inverter

A substrate electric potential stabilization circuit is configured to be connected to a bidirectional switch element including a first main electrode, a second main electrode, and a backside electrode. The stabilization circuit includes a first switch connected to the first main electrode and the backside electrode in series between the first main electrode and the backside electrode, a second switch connected to the second main electrode and the backside electrode in series between the second main electrode and the backside electrode, and a through-current prevention circuit configured to prevent the first switch and the second switch from being turned on simultaneously. The substrate electric potential stabilization circuit prevents a through-current flowing in this circuit.

Substrate electric potential stabilization circuit and bidirectional switch system

A switch system includes a bidirectional switch, a first gate driver circuit, a second gate driver circuit, a control unit, a first decision unit, and a second decision unit. The bidirectional switch includes a first source, a second source, a first gate, and a second gate. The first decision unit determines, based on a voltage at the first gate and a first threshold voltage, a state of the first gate in a first period in which a signal to turn OFF the first gate is output from the control unit to the first gate driver circuit. The second decision unit determines, based on a voltage at the second gate and a second threshold voltage, a state of the second gate in a second period in which a signal to turn OFF the second gate is output from the control unit to the second gate driver circuit.

Switch system

A speed-up circuit is configured to be provided between a power supply terminal and a gate of a semiconductor switching element. An impedance element is configured to be provided between a signal input terminal and a node, the node being between the speed-up circuit and the gate of the semiconductor switching element. In the speed-up circuit, a second field effect transistor is connected in series to a first field effect transistor and is configured to be connected to the gate of the semiconductor switching element. The impedance element has an impedance higher than an impedance of the speed-up circuit when both the first field effect transistor and the second field effect transistor are in an ON state.

Driver circuit and switch system

A bidirectional switch element includes: a substrate; an AlGaN layer; an AlGaN layer; a first source electrode; a first gate electrode; a second gate electrode; a second source electrode; a p-type AlGaN layer; a p-type AlGaN layer; an AlGaN layer; and an AlGaN layer. The AlGaN layer is formed over the substrate. The AlGaN layer is formed on the AlGaN layer. The AlGaN layer is interposed between the substrate and the AlGaN layer. The AlGaN layer is interposed between the substrate and the AlGaN layer and has a higher C concentration than the AlGaN layer.

Bidirectional switch element

A semiconductor device includes a supporting substrate, a semiconductor chip, a resin member, and a heat-dissipating metal layer. The supporting substrate has a first surface and a second surface located opposite from each other in a thickness direction defined for the supporting substrate. The semiconductor chip includes a plurality of electrodes. The semiconductor chip is bonded to the supporting substrate on one side thereof with the first surface. The resin member has a first surface and a second surface located opposite from each other in a thickness direction defined for the resin member. The resin member covers at least a side surface of the supporting substrate and a side surface of the semiconductor chip. The heat-dissipating metal layer is arranged in contact with the supporting substrate and the resin member to cover the second surface of the supporting substrate and the second surface of the resin member at least partially.

Semiconductor device including heat-dissipating metal multilayer having different thermal conductivity, and method for manufacturing same

A solar cell has a condenser lens and a solar cell element, the solar cell element including an n-type InGaAs layer, an n-type GaAs layer, an n-type InGaP layer, the first InGaAs peripheral part having a thickness (d2), and a width (w2), the second InGaAs peripheral part having a thickness (d3), and a width (w3), the first GaAs peripheral part having a thickness (d5), and a width (w4), the second GaAs peripheral part a thickness (d6), and a width (w5), the first InGaP peripheral part having a thickness (d8), and a width (w6), the second InGaP peripheral part having a thickness (d9), and a width (w7), the following inequation set being satisfied: 1 nm&#x2264;(d2, d3, d5, and d6)&#x2264;4 nm, 1 nm&#x2264;(d8 and d9)&#x2264;5 nm, 100 nm&#x2264;(w2, w3, w4, w5, w6, and w7), the InGaAs center part having a thickness (w1), a window layer has a range S irradiated by sunlight having a width (w8); w8&#x2264;w1.

Solar cell

Growing community of inventors

Osaka, Japan

Hidetoshi Ishida