Hitachi, Ltd.

Hidetoshi Aizawa

Shuji Katoh

Hiromitsu Sakai

Ryuji Iyotani

Masahiro Nagasu

Shigeta Ueda

Mitsuyuki Hombu

Tomomichi Ito

Hiroshi Narita

Akiteru Ueda

Kaoru Tamura

A semiconductor electric power converter in accordance with the present invention comprises an arm consisting of an IGBT, a capacitor connected between a collector and a gate of said IGBT, and a gate circuit connected to the gate of said IGBT for controlling the switching operation of said IGBT, wherein a plurality of said arms connected in series are connected in parallel and each midpoint of said arms connected in of series is connected to a load. Thereby the impedance between the gate terminal of the IGBT and the gate circuit is decreased when the gate voltage is higher than the gate voltage command value or the impedance between the gate and the emitter of the IGBT is decreased when the collector voltage is high so that an electric charge stored in the gate is rapidly discharged.

Power conversion apparatus

A semiconductor power converting apparatus includes a semiconductor element for controlling a current flowing between a collector and an emitter in response to a gate condition, a driving device connected to the gate, for driving the gate in response to a drive signal entered thereinto, a voltage applying device for applying both a forward bias and a reverse bias to the gate so as to set the emitter of the semiconductor element to a neutral potential, and a voltage dividing device for dividing a voltage appearing between the collector and the emitter of the semiconductor element, in which the drive signal is under OFF state, a voltage produced based upon the divided voltage by the voltage dividing device is applied to the gate, and the gate voltage is controlled in response to the voltage appearing between the collector and the emitter of the semiconductor element, thereby reducing the snubbed loss.

Semiconductor power converting apparatus

An electric power converter comprising a plurality of reactors, a plurality of self quenching type switching elements, the reactors and switching elements being series-connected per one arm, and surge-absorbing snubber circuits connected in parallel to the switching elements respectively, the switching circuits being driven by gate drive circuits connected to respective gates of the switching elements to thereby convert a DC voltage into an AC voltage or convert an AC voltage into a DC voltage. The electric power converter further comprises: an apparatus for recovering energy accumulated on at least one side of the reactors and the snubber circuits and an apparatus for generating a DC source for supplying electric power to each of the gate drive circuits, on the basis of the recovered energy. In the electric power converter constituted by a plurality of self quenching type semiconductor switching elements connected in series, high efficiency is attained through reduction in size of the gate driver and electric power saving.

Gate drive power source for electric power converter

A pulse width modulation inverter loaded with a three-phase AC motor is halted when a logical condition exists that a halt signal has been given and all of pulse width modulation signals applied to either three positive side or three negative side main thyristors in a three-phase bridge connection constituting the inverter are in their high level states.

Pulse width modulation inverter

Growing community of inventors

Tokai-mura, Japan

Hidetoshi Aizawa