Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Other

Hideto Ohnuma

Shunpei Yamazaki

Hongyong Zhang

Yasuhiko Takemura

Naoaki Yamaguchi

Hisashi Ohtani

Hideomi Suzawa

Jun Koyama

Koichiro Tanaka

Masayuki Sakakura

Hideaki Kuwabara

Toshimitsu Konuma

Satoshi Murakami

Hideki Uochi

Hidehito Kitakado

Tamae Takano

Yukio Tanaka

Tetsuya Kakehata

Yoichi Iikubo

Kenichiro Makino

Junichi Koezuka

Toru Mitsuki

Atsunori Suzuki

Satoshi Teramoto

Naoto Kusumoto

Hiroki Adachi

Osamu Nakamura

Koji Dairiki

Mitsuhiro Ichijo

Akira Sugawara

Yukiko Uehara

Mitsuaki Osame

Yasuhiro Jinbo

Taketomi Asami

Masaharu Nagai

Teruyuki Fujii

Ichiro Uehara

Masayuki Kajiwara

Toru Takayama

Akihisa Shimomura

Naoki Makita

Hironobu Shoji

Takuya Matsuo

Hiromichi Godo

Koji Ono

Setsuo Nakajima

Yoshiaki Yamamoto

Kazuya Hanaoka

Hirokazu Yamagata

Chiho Kokubo

Etsuko Fujimoto

Junpei Momo

Tomoaki Moriwaka

Shigeki Komori

Hiroaki Ishihara

Ryota Imahayashi

Misako Nakazawa

Shigeharu Monoe

Naoyuki Senda

Kazuhisa Nakashita

Satoshi Seo

Hajime Kimura

Yasuyuki Arai

Kei Takahashi

Takeshi Fukunaga

Atsuo Isobe

Yutaka Shionoiri

Aya Anzai

Satoru Okamoto

Kenji Kasahara

Satoshi Toriumi

Shou Nagao

Aiko Shiga

Fumito Isaka

Takatsugu Omata

Akihiro Ishizuka

Masato Yonezawa

Sho Kato

Satoshi Shinohara

Akira Takenouchi

Takeshi Shichi

Noriyoshi Suzuki

Yukie Nemoto

Yasuhiro Mitani

Sho Nagamatsu

Miki Suzuki

Kengo Akimoto

Shinya Sasagawa

Kosei Noda

Toshiji Hamatani

Motomu Kurata

Kazutaka Kuriki

Tomoya Futamura

Kiyofumi Ogino

Shuhei Tsuchimoto

Naoki Okuno

Kosei Nei

Masaki Koyama

Koji Moriya

Eiji Higa

As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.

Semiconductor device and manufacturing method thereof

As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the lime of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.

Semiconductor device having a structure which prevents a defect due to precision and bending and manufacturing method thereof

Semiconductor device having reduced upper surface shape of a partition in order to improve definition and manufacturing method thereof

It is an object of the present invention to provide a method for preventing a breaking and poor contact, without increasing the number of steps, thereby forming an integrated circuit with high driving performance and reliability. The present invention applies a photo mask or a reticle each of which is provided with a diffraction grating pattern or with an auxiliary pattern formed of a semi-translucent film having a light intensity reducing function to a photolithography step for forming wires in an overlapping portion of wires. And a conductive film to serve as a lower wire of a two-layer structure is formed, and then, a resist pattern is formed so that a first layer of the lower wire and a second layer narrower than the first layer are formed for relieving a steep step.

A highly reliable light-emitting module or light-emitting device is provided. A method for manufacturing a highly reliable light-emitting module is provided. The light-emitting module includes, between a first substrate and a second substrate, a first electrode provided over the first substrate, a second electrode provided over the first electrode with a layer containing a light-emitting organic compound interposed therebetween, and a sacrifice layer formed using a liquid material provided over the second electrode.

Light-emitting module, light-emitting device, and method for manufacturing the light-emitting module

To provide a light-emitting panel in which the occurrence of crosstalk is suppressed. To provide a method for manufacturing a light-emitting panel in which the occurrence of crosstalk is suppressed. The light-emitting panel includes a first electrode of one light-emitting element, a first electrode of the other light-emitting element, and an insulating partition which separates the two first electrodes. A portion with a thickness Asmaller than a thickness Aof a portion of the layer containing a light-emitting organic compound, which overlaps with a side surface of the partition, is included. The ratio (B/B) of a thickness Bof a portion of the second electrode, which overlaps with a side surface of the partition, to a thickness Bof a portion of the second electrode, which overlaps with the first electrode, is higher than the ratio (A/A).

Light-emitting panel, light-emitting device using the light-emitting panel, and method for manufacturing the light-emitting panel

This invention provides a semiconductor device having high operation performance and high reliability. An LDD regionoverlapping with a gate wiring is arranged in an n-channel TFTforming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regionsandnot overlapping with a gate wiring are arranged in an n-channel TFTforming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD regionthan in the LDD regionsand

Semiconductor device and fabrication method thereof

Semiconductor device having a structure that prevents defects due to precision, bending and the like of a mask without increasing manufacturing steps

Disclosed is a driver circuit including a latch circuit, a shift register circuit, and a switching circuit, where the latch circuit is provided over the shift register circuit and the switching circuit. The shift register circuit and the switching circuit may have a silicon-based semiconductor, while the latch circuit may have an oxide semiconductor. The latch circuit includes a first transistor and a second transistor connected in series. The latch circuit may further include a first capacitor and a second capacitor which are electrically connected to the first transistor and the second transistor. A display device using the driver circuit as well as a method for preparing the driver circuit is also disclosed.

Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device

Method of making a semiconductor lighting emitting device that prevents defect of the mask without increasing steps

An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700&#xb0; C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.

SOI substrate, method for manufacturing the same, and semiconductor device

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Kanagawa, Japan

Hideto Ohnuma