Tokyo Ohka Kogyo Co., Ltd.

Toyko Ohka Kogyo Co., Ltd.

Hideto Nito

Hiroaki Shimizu

Tsuyoshi Nakamura

Jiro Yokoya

Takashi Nagamine

Takahiro Dazai

Tomoyuki Hirano

Daiju Shiono

Kotaro Endo

Tsuyoshi Kurosawa

Sanae Furuya

Yoshiyuki Utsumi

Masaru Takeshita

Takahiro Kojima

Daichi Takaki

Junichi Tsuchiya

Takuya Ikeda

Tatsuya Fujii

Issei Suzuki

Sho Abe

KhanhTin Nguyen

Yuki Fukumura

Masafumi Fujisaki

Hirokuni Saito

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and which includes a polymeric compound having a structural unit represented by general formula (a0-1) (wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Varepresents a divalent hydrocarbon group; nrepresents an integer of 0 to 2; Rarepresents an acid dissociable group represented by general formula (a0-r1-1); Raand Rarepresents a hydrocarbon group; Raand Ramay be mutually bonded to form a ring; Yarepresents a quaternary carbon atom; Ra, Raand Raeach independently represents a hydrocarbon group, provided that at least one of Ra, Raand Rais a hydrocarbon group having a polar group). 

Resist composition, method of forming resist pattern, polymeric compound, and copolymer

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, and a compound (D1) represented by general formula (d1), wherein Zrepresents an anion having an aromatic ring containing a hydroxybenzoic acid skeleton, provided that at least one hydrogen atom of the aromatic ring has been substituted with a halogen atom; m represents an integer of 1 or more; and Mrepresents an organic cation having a valency of m.Z(M)&#x2003;&#x2003;(d1)

Resist composition, method of forming resist pattern, compound, and acid diffusion control agent

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and which includes a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including a compound (B0-1) represented by general formula (b0) shown below (in the formula, Yxrepresents a divalent linking group; n represents an integer of 1 to 3; and M'represents an organic cation having a valency of m. 

Resist composition, method for forming resist pattern, acid generator and compound

A method of forming a resist pattern, including forming a resist film by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; subjecting the resist film to exposure baking the exposed resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern.

Resist composition and method of forming resist pattern

A method of forming a resist pattern, including forming a resist film on a substrate using a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component; exposing the resist film; baking the exposed resist film, such that, at an exposed portion thereof, the base generated from the photo-base generator component upon the exposure and an acid provided to the resist film are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the acid provided to the resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion of the resist film has been dissolved and removed.

Method of forming resist pattern

A method of forming a resist pattern, including: a step (1) in which a resist film is formed by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; a step (2) in which the resist film is subjected to exposure; a step (3) in which baking is conducted after the step (2); and a step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern, and a resist composition used in the step (1).

A resist composition used in a method of forming a resist pattern including applying a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component to a substrate to form a resist film; subjecting the resist film to exposure; baking after subjecting the resist film to exposure, wherein at an exposed portion of the resist film, the base generated from the photo-base generator component upon exposure and an acid provided to the resist film in advance are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of acid provided to the resist film in advance; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern.

A compound represented by general formula (b1) shown below (in the formula, Yrepresents a divalent linking group; W represents S, Se or I; Rrepresents a hydrocarbon group; represents an alkyl group of 1 to 5 carbon atoms or an alkoxy group of 1 to 5 carbon atoms; when W represents I, m+n=2, and when W represents S or Se, m+n=3, provided that m&#x2267;1 and n&#x2267;0; p represents an integer of 0 to 5; and Xrepresents a counteranion. 

Compound, resist composition and method of forming resist pattern

There are provided a method of forming a resist pattern includes: a step () in which a resist composition containing a base component (A) that generates base upon exposure and exhibits increased solubility in an alkali developing solution by the action of acid is applied to a substrate to form a resist film; a step () in which the resist filmis subjected to exposure; a step () in which baking is conducted after the step (); and a step () in which the resist filmis subjected to an alkali development, thereby forming a negative-tone resist pattern in which the unexposed portionof the resist filmhas been dissolved and removed, and the resist composition used in the step ().

A resist composition which generates a base upon exposure and exhibits increased solubility in an alkali developing solution under the action of acid, and the resist composition including: a base component (A) that exhibits increased solubility in an alkali developing solution under the action of acid; an acidic compound component (G1) including a nitrogen-containing cation having a pKa value of 7 or less and a counteranion; and a buffer component (K) including a nitrogen-containing cation and a counteranion being a conjugate base for the acid having a pKa value of 0 to 5.

A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, a basic-compound component (C) and an acid-generator component (B) which generates acid upon exposure, the component (B) including a compound represented by formula (b1), and the component (C) including at least one compound represented by formulas (c1) to (c3) (wherein Zrepresents a ring skeleton-containing hydrocarbon group, Qrepresents a divalent linking group containing oxygen, Yrepresents a fluorinated alkylene group, Mrepresents an organic cation, Rrepresents a fluorinated alkyl group or a hydrocarbon group, Land Lrepresents a sulfonium or an iodonium, Zrepresents a hydrogen atom or a hydrocarbon group, Yrepresents a single bond or a divalent linking group containing no fluorine, Rrepresents an organic group, Yrepresents an alkylene group or an arylene group; and Rf represents a fluorine-containing hydrocarbon group). 

A method of forming a resist pattern, including: step (1) in which a resist composition including a base component, a photobase generator component and an acid supply component is applied to a substrate to form a resist film; step (2) in which the resist film is subjected to exposure without being subjected to prebaking; step (3) in which baking is conducted after step (2), such that, at an exposed portion of the resist film, the base generated from the photobase generator component upon the exposure and an acid derived from the acid supply component are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of the acid derived from the acid supply component; and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern.

A method of forming a resist pattern, including: step (1) in which a resist composition containing a base component (A) that exhibits increased solubility in an alkali developing solution and a compound represented by general formula (C1) is applied to a substrate to form a resist film, step (2) in which the resist film is subjected to exposure, step (3) in which baking is conducted after step (2), and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern; and the resist composition used in step (1): wherein Rrepresents a group which forms an aromatic ring together with the two carbon atoms bonded to the Rgroup; Rrepresents a hydrogen atom or a hydrocarbon group; and Rrepresents a hydrogen atom, a carboxy group or a hydrocarbon group of 1 to 15 carbon atoms.

A method of forming a resist pattern, the method including: forming a resist film on a substrate using a resist composition containing a base component (A) that exhibits reduced solubility in an organic solvent under the action of acid, an acid generator component (B) that generates acid upon exposure and a fluorine-containing polymeric compound (F), exposing the resist film, and patterning the resist film by negative tone development using a developing solution containing the organic solvent, thereby forming a resist pattern, wherein the base component (A) contains a resin component (A1) containing a structural unit (a1) derived from an acrylate ester, the dissolution rates of (A1) and (F) in the developing solution are each at least 10 nm/s, and the absolute value of the difference in the dissolution rates of (A1) and (F) in the developing solution is not more than 80 nm/s.

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Hideto Nito