Nec Lcd Technologies, Ltd.

Hideto Motoshima

Makoto Horinouchi

Akitoshi Maeda

Takasuke Hayase

Shingo Saigo

Tsutomu Hamada

Tsuyoshi Katoh

Kiyoshi Yanase

Norihiro Sakumichi

Masatoshi Tani

Shoichi Sonohata

Hisanobu Shimodozono

Junji Nishimoto

Yasushi Umihira

Shouichi Sonohata

A display portion is divided by scan lines and signal lines into sections where pixels are provided. Contact holes each for connecting common wiring and a common electrode together are not formed for all the pixels, but decimated so as to be arranged in zigzags.

Method of manufacturing a liquid crystal display

Liquid crystal display

A semi-transmissive type liquid-crystal display device suppresses the reduction and corrosion of the transmission or common electrode due to the cell corrosion reaction with a simple method. In each pixel region, the reflection electrode is formed over the glass plate, where the interlayer insulating film and the barrier metal film intervene between them. The reflection electrode is electrically connected to the transmission electrode by way of the barrier metal film. The transmission electrode and the corresponding scanning line thereto are apart from each other at a distance of 2 &#x3bc;m (preferably, 3 &#x3bc;m) or greater. A developer solution penetrating through the crack formed in the barrier metal film does not reach the transmission electrode (or common electrode), preventing the reduction and corrosion of the transmission or common electrode.

Semi-transmissive type liquid-crystal display device and method of fabricating the same

Extraction wirings are respectively connected to a signal line of a switching element and a scanning line thereof, and led out to one side portion of a transparent insulating substrate. Conductive terminals respectively united with the extraction wiring are formed in tip end portions thereof, and a plurality of contact holes connected to the conductive terminals are formed on the conductive terminals so that a diver IC is mounted thereon by using conductive resin. Each of the extraction wirings is provided with a semiconductor film pattern in the vicinity of the contact hole for blocking the moisture in the conductive resin to reach the extraction wirings through an interlayer insulating film.

Active matrix substrate and method of manufacturing the same

Disclosed is a photoresist film which is formed in a manner of covering at least a source electrode, a source line, a pixel electrode, a drain electrode, a drain line, a semiconductor film and a protective film, and further covering a gate insulting film in their vicinities. Moreover, wet and dry etchings are sequentially performed by using the photoresist film as a mask. Due to this etching, a residual pattern existing on the gate insulating film is etched.

Method of manufacturing a liquid crystal display device

Liquid crystal display with superposed contact holes and method of manufacturing the same

A voltage of a front channel (gate side wiring) of a thin film transistor is made equal to a voltage of a back channel (liquid crystal alignment side) thereof by electrically connecting a gate electrode and a back channel electrode through a gate contact hole to a semiconductor layer constituting the thin film transistor. The thin film transistor is fabricated through four patterning steps by simultaneously etching the semiconductor layer and a transparent electrode by using a photo resist on the front channel.

Thin film transistor and fabrication method of the same

Growing community of inventors

Izumi, Japan

Hideto Motoshima