Tosoh Corporation

Other

National Institute for Materials Science

Hideto Kuramochi

Ryo Akiike

Hitoshi Iigusa

Yoshitaka Kubota

Masami Mesuda

Tetsuo Shibutami

Yuya Tsuchida

Mutsumi Asano

Kimiaki Tamano

Kenji Omi

Satoshi Kondo

Kenichi Itoh

Masayuki Kudo

Yoshinori Harada

Hiroshi Yamamura

Toshiyuki Mori

Hiroyuki Hara

Keitaro Matsumaru

Shinichi Hara

Masanori Ichida

Toyohiro Chikyow

Kentaro Utsumi

Takahiro Nagata

Satoshi Kondoh

Shuji Takato

Shuji Takatoh

Hiroyuki Yokomizo

Yoichiro Koda

Yoshihiro Ueoka

Yuya Suemoto

Liwen Sang

The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them. A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.

Gallium nitride-based sintered body and method for manufacturing same

High-purity gallium nitride particles having a low oxygen content suitable for a raw material or a sintered body is provided. Gallium nitride particles characterized in that the oxygen content is 0.5 at % or less and the total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is less than 10 wtppm are used.

Gallium nitride particles and method for producing same

The present invention provides: a multilayer film structure which has high crystallinity and planarity; and a method for producing this multilayer film structure. This multilayer film structure is provided with: an Si (111) substrate; a first thin film that is arranged on the Si (111) substrate, while being formed of a nitride material and/or aluminum; and a second thin film that is arranged on the first thin film, while being formed of a nitride material. An amorphous layer having a thickness of 0 nm or more but less than 1.0 nm are present on the Si (111) substrate; and the full width at half maximum (FWHM) of a rocking curve of the (0002) plane at the surface of this multilayer film structure is 1.50° or less.

Multilayer film structure and method for producing same

It is difficult for a Cr—Si-based sintered body composed of chromium silicide (CrSi) and silicon (Si) to have high strength. Provided is a Cr—Si-based sintered body including Cr (chromium) and silicon (Si), in which the crystal structure attributed by X-ray diffraction is composed of chromium silicide (CrSi) and silicon (Si), a CrSiphase is present at 60 wt % or more in a bulk, a density of the sintered body is 95% or more, and an average grain size of the CrSiphase is 60 μm or less.

Cr—Si sintered body

Provided is a silicide-based alloy material with which environmental load can be reduced and high thermoelectric conversion performance can be obtained. Provided is a silicide-based alloy material including silicon and ruthenium as main components, in which when the contents of silicon and ruthenium are denoted by Si and Ru, respectively, the atomic ratio of the devices constituting the alloy material satisfies the following:45 atm %&#x2264;Si/(Ru+Si)&#x2264;70 atm %30 atm %&#x2264;Ru/(Ru+Si)&#x2264;55 atm %.

Silicide alloy material and thermoelectric conversion device in which same is used

A sputtering target for a gallium nitride thin film, which has a low oxygen content, a high density and a low resistivity. A gallium nitride powder having powder physical properties of a low oxygen content and a high bulk density is used and hot pressing is conducted at high temperature in high vacuum to prepare a gallium nitride sintered body having a low oxygen content, a high density and a low resistivity.

Gallium nitride-based sintered compact and method for manufacturing same

An oxide sintered body containing indium, hafnium, tantalum, and oxygen as constituent elements, in which when indium, hafnium, and tantalum are designated as In, Hf, and Ta, respectively, the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.002 to 0.030, and the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.0002 to 0.013.

Oxide sintered body and transparent conductive oxide film

The present invention provides a complex oxide sintered bodywherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered bodyand a transparent conductive oxide film obtained by sputtering the sputtering target.

Complex oxide sintered body, sputtering target, transparent conductive oxide film, and method for producing same

The invention provides an oxide sintered compactcomposed of a crystal phase which consists of a bixbite-type oxide phase and a perovskite-type oxide phase, or a bixbite-type oxide phase, the crystal phase having indium, tin, strontium and oxygen as the constituent elements, and the indium, the tin and the strontium contents satisfying formulas (1) and (2) in terms of atomic ratio, as well as a sputtering target. There are further provided an oxide transparent conductive film formed using the sputtering target, and a solar cell.Sn/(In+Sn+Sr)=0.01-0.11&#x2003;&#x2003;(1)Sr/(In+Sn+Sr)=0.0005-0.004&#x2003;&#x2003;(2)[In formulas (1) and (2), In, Sn and Sr represent indium, tin and strontium contents (atomic percent), respectively.]

Sintered oxide material, method for manufacturing same, sputtering target, oxide transparent electrically conductive film, method for manufacturing same, and solar cell

There is provided a zinc oxide sintered compact with a zirconium content of 10 to 1000 ppm, and a sputtering target containing the zinc oxide sintered compact. There is also provided a zinc oxide thin-film having a zirconium content of 10 to 2000 ppm and a resistivity of 10 &#x3a9;&#xb7;cm or greater.

Zinc oxide sintered compact, sputtering target, and zinc oxide thin film

To provide a composite oxide sintered body from which an oxide transparent conductive film having lower light absorption properties in a wide wavelength region and having a low resistance can be obtained, and an oxide transparent conductive film. A composite oxide sintered body containing indium, zirconium, hafnium and oxygen, wherein the atomic ratio of the elements constituting the sintered body satisfies the following formulae, where In, Zr and Hf are respectively contents of indium, zirconium and hafnium:Zr/(In+Zr+Hf)=0.05 to 4.5 at %Hf/(In+Zr+Hf)=0.0002 to 0.15 at %.

Composite oxide sintered body and oxide transparent conductive film

A sintered composite oxidecomposed mainly of zinc, aluminum, titanium and oxygen, the atomic ratio of the elements satisfying the following equations (1) to (3), the sintered composite oxidecomprising particles having a hexagonal wurtzite structure containing zinc oxide as the major component and having a mean particle size of no greater than 20 &#x3bc;m, and particles having a ZnTiO-like structure and/or ZnTiO-like structure containing aluminum and titanium and having a mean particle size of no greater than 5 &#x3bc;m, and containing no particles with a spinel oxide structure of zinc aluminate with zinc and aluminum in solid solution, and a manufacturing method for the same.(Al+Ti)/(Zn+Al+Ti)=0.004-0.055&#x2003;&#x2003;(1)Al/(Zn+Al+Ti)=0.002-0.025&#x2003;&#x2003;(2)Ti/(Zn+Al+Ti)=0.002-0.048&#x2003;&#x2003;(3)[In the equations, Al, Ti and Zn represent the contents (atomic percents) of aluminum, titanium and zinc, respectively.]

Sintered composite oxide, manufacturing method therefor, sputtering target, transparent conductive oxide film, and manufacturing method therefor

A transparent conductive zinc oxide based film according to the present invention contains Ti, Al and Zn in such a proportion that satisfies the following formulae (1), (2) and (3) in terms of atomic ratio, and has a plurality of surface textures different in size on a surface, wherein a center-line average surface roughness Ra of the surface of the transparent conductive film is 30 nm to 200 nm, and an average value of widths of the surface textures is 100 nm to 10 &#x3bc;m.0.001&#x2266;Ti/(Zn+Al+Ti)&#x2266;0.079.&#x2003;&#x2003;(1)0.001&#x2266;Al/(Zn+Al+Ti)&#x2266;0.079&#x2003;&#x2003;(2)0.010&#x2266;(Ti+Al)/(Zn+Al+Ti)&#x2266;0.080&#x2003;&#x2003;(3)

Transparent conductive zinc oxide film, process for production thereof, and use thereof

A sintered complex oxide comprising metal oxide particles (a) having a hexagonal lamellar structure and containing zinc oxide and indium, and metal oxide particles (b) having a spinel structure and containing a metal element M (where M is aluminum and/or gallium), wherein the mean value of the long diameter of the metal oxide particles (a) is no greater than 10 &#x3bc;m, and at least 20% of the metal oxide particles (a) have an aspect ratio (long diameter/short diameter) of 2 or greater, based on the number of particles.

Growing community of inventors

Ayase, Japan

Hideto Kuramochi