Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Hideto Adachi

Isao Kidoguchi

Kiyoshi Ohnaka

Akira Takamori

Satoshi Kamiyama

Toshiya Fukuhisa

Masaya Mannoh

Takeshi Uenoyama

Yasuhito Kumabuchi

Akihiko Ishibashi

Masaya Mannou

Minoru Kubo

Yuzaburo Ban

Masakatsu Suzuki

Toyoji Chino

Toshikazu Onishi

Kouji Makita

Suguru Nakao

Hiroto Inoue

Osamu Imafuji

Yukihiro Iwata

Toshiya Kawata

Takayuki Kashima

Korekazu Mochida, Legal Representative

Kyoko Mochida, Legal Representative

Masatoshi Tamura

Kenji Yoshikawa

Koji Makita

Hiroshi Asaka

Keiji Yamane

The semiconductor laser of the present invention includes a first conductivity-type cladding layer, a second conductivity-type cladding layer having at least one ridge structure extending in the direction of a resonator, an active layer disposed between the two cladding layers and a current blocking layer provided so as to cover at least a side face of the ridge structure. The current blocking layer includes a hydrogenated first dielectric film. In the structure having the current blocking layer formed of a dielectric, a light confining efficiency is enhanced, a threshold value of laser oscillation decreases, and current properties during the oscillation at a high temperature and with a high power are improved.

Semiconductor laser and method for manufacturing the same

The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.

Semiconductor light emitting element and method for fabricating the same

A method of mounting a semiconductor laser component capable of preventing deterioration of laser characteristics and destruction of the semiconductor laser component due to a rise in temperature and a residual stress of the semiconductor laser component. The semiconductor laser component is mounted on a submount by heating and pressure-bonding, and is heated again up to a temperature more than a melting point of a bonding member at the released pressure to release the residual stress.

Semiconductor laser device and a method of mounting a semiconductor laser component on a submount

The present invention aims to provide a semiconductor laser device which has a structure that is easy to manufacture, a satisfactory temperature characteristic as well as high-speed response characteristic. The device includes the following: an n-type GaAs substrate; an n-type AlGaInP cladding layerformed on the n-type GaAs substrate; a non-doped quantum well active layer; a p-type AlGaInP first cladding layer; a p-type GaInP etching stop layer; a p-type AlGaInP second cladding layer; a p-type GaInP cap layer; a p-type GaAs contact layer; and an n-type AlInP block layer. The device has a ridge portion and convex portions formed on both sides of the ridge portion, and the p-type GaAs contact layeris formed on the ridge portion only.

Semiconductor laser device and method of manufacturing the same

A semiconductor laser device is provided that includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer provided on the semiconductor substrate and an active layer provided on the cladding layer. The active layer has a super-lattice structure including a disordered region in a vicinity of a cavity end face. A first cladding layer of a second conductivity type is provided on the active layer, an etching stop layer of the second conductivity type is provided on the first cladding layer and a second cladding layer of the second conductivity type is provided on the etching stop layer. The second cladding layer forms a ridge structure that extends along a cavity length direction. An impurity concentration in the etching stop layer in the vicinity of the cavity end face is equal to or smaller than about 2&#xd7;10cm.

Semiconductor device and method for producing the same

A semiconductor laser has a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer formed on a first conduction-type semiconductor substrate. The second conduction-type cladding layer has a mesa-type stripe-shaped recessed portion in at least four spots, so as to form a central ridge portion, which constitutes a ridge-type current confinement portion, and two or more lateral ridge portions, which are positioned on both sides of the central ridge portion, have a height larger than to that of the central ridge portion, and include the second conduction-type cladding layer. An insulation film with a lower refractive index than the second conduction-type cladding layer is formed in a pair of stripes disposed respectively in the regions from the side surface of the second conduction-type cladding layer on both side surfaces of the central ridge portion toward the outside. The insulation film is not formed on the central ridge portion.

A semiconductor laser device including: a semiconductor substrate of a first conductivity type; a cladding layer of the first conductivity type provided on the semiconductor substrate; an active layer provided on the cladding layer of the first conductivity type, the active layer having a super-lattice structure including a disordered region in a vicinity of at least one cavity end face; a first cladding layer of a second conductivity type provided on the active layer; an etching stop layer of the second conductivity type provided on the first cladding layer; and a second cladding layer of the second conductivity type provided on the etching stop layer, the second cladding layer forming a ridge structure, the ridge structure extending along a cavity length direction and having a predetermined width. A concentration of an impurity in the etching stop layer in the vicinity of the at least one cavity end face is greater than a concentration of the impurity in the interior of a cavity and equal to or smaller than about 2&times;10 cm .

A method for producing a semiconductor element comprises the steps of: forming a plurality of grooves on a first surface of a semiconductor multi-layer structure along a first direction: forming a plurality of multi-element bars by cleaving the semiconductor multi-layer structure along a second direction; placing at least one of the plurality of multi-element bars on a support stage; and cleaving the at least one of the plurality of multi-element bars along the plurality of grooves by moving a pressure member in a longitudinal direction of the at least one of the plurality of multi-element bars while a constant load is applied by the pressure member to a second surface of the at least one of the plurality of multi-element bars, the second surface being opposite a third surface corresponding to the first surface of the at least one of the plurality of multi-element bars.

Method and apparatus for producing semiconductor element

An n-type GaAs buffer layer an n-type AlGaInP cladding layer a multiple quantum well active layer made of AlGaInP and GaInP, a first p-type AlGaInP cladding layer an optical guide layer a second p-type cladding layer a p-type GaInP saturable absorption layer and a third p-type AlGaInP cladding layer are sequentially formed on an n-type GaAs substrate In this structure, the volume of the saturable absorption layer is reduced, and the optical guide layer is provided. As the volume of the saturable absorption layer becomes smaller, the more easily the carrier density can be increased, the more easily the saturated state can be attained, and the more remarkable the saturable absorption effect becomes. Thus, a semiconductor laser having stable self-oscillation characteristics and, as a result, having a low relative noise intensity is realized.

Semiconductor laser and optical disk device using the laser

A semiconductor laser device, including a substrate; a ridge stripe formed on the substrate and including an active layer, an n-cladding layer and p-cladding layer, the n-cladding layer and the p-cladding layer interposing the active layer; in which the ridge stripe has a laser unit which lases. In one embodiment the ridge stripe has a tip portion having a tapered shape, and an angle formed inside the ridge stripe by a bottom surface of the ridge stripe and a side surface of the ridge stripe is in the range of about 60&deg; and about 90&deg;. In one embodiment, the laser device includes a misoriented substrate and the ridge stripe has current blocking layers formed on both sides thereof.

Semiconductor laser device with ridge structure

An n-type GaAs buffer layer,an n-type AlGaInP cladding layer,a multiple quantum well active layer,made of AlGaInP and GaInP, a first p-type AlGaInP cladding layer,an optical guide layer,a second p-type cladding layer,a p-type GaInP saturable absorption layer,and a third p-type AlGaInP cladding layer,are sequentially formed on an n-type GaAs substrate,In this structure, the volume of the saturable absorption layer is reduced, and the optical guide layer is provided. As the volume of the saturable absorption layer becomes smaller, the more easily the carrier density can be increased, the more easily the saturated state can be attained, and the more remarkable the saturable absorption effect becomes. Thus, a semiconductor laser having stable self-oscillation characteristics and, as a result, having a low relative noise intensity is realized.

In a semiconductor laser including an active layer and a buried layer for absorbing laser light emitted from the active layer, an oscillation wavelength of the laser light is in a 650 nm band, an oscillation mode is a single transverse mode, and a peak of a light intensity distribution of the laser light is placed on the side opposite to the buried layer with respect to the center of the active layer.

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Okayama, Japan

Hideto Adachi