Taiyo Yuden Co., Ltd.

Hidetaro Nakazawa

Takashi Matsuda

Jun Tsutsumi

Kentaro Nakamura

Masafumi Iwaki

Shogo Inoue

Tabito Tanaka

Yoshio Satoh

Yoshio Sato

An electronic component includes: a first substrate; a second substrate that includes a functional element formed on a lower surface of the second substrate, the second substrate being mounted on the first substrate so that the functional element faces an upper surface of the first substrate across an air gap; and an insulating film that is located on the upper surface of the first substrate, overlaps with at least a part of the functional element in plan view, faces the functional element across the air gap, and has a film thickness that is more than half of a distance between a lower surface of the functional element and the upper surface of the first substrate.

Electronic component with two substrates enclosing functional element and insulating film therein

A multiplexer includes: a first filter including a series resonator connected in series and a parallel resonator connected in parallel between a common terminal and a first terminal, each of the series resonator and the parallel resonator including an IDT located on a piezoelectric substrate, first and second regions being alternately located in an extension direction of electrode fingers, which excite an acoustic wave, within an overlap region of the IDT in which the electrode fingers overlap, a width of at least one of the electrode fingers in the second region being greater than that in the first region, one or some resonators of the parallel resonator and the series resonator having a larger number of the second regions than a remaining resonator; and a second filter connected between the common terminal and a second terminal and having a passband higher than a passband of the first filter.

Multiplexer

An acoustic wave resonator includes: a piezoelectric substrate; and an IDT that is located on the piezoelectric substrate and includes first regions and second regions alternately arranged in an extension direction of electrode fingers, which excite an acoustic wave, in an overlap region in which the electrode fingers overlap, at least one electrode finger of the electrode fingers in the second regions having a different width from the at least one electrode finger in the first regions, a width of an outer second region of the second regions in the extension direction differs from a width of an inner second region of the second regions.

Acoustic wave resonator, filter, and multiplexer

An acoustic wave resonator includes: a piezoelectric substrate; and an IDT located on the piezoelectric substrate and including a pair of comb-shaped electrodes facing each other, each of the pair of comb-shaped electrodes including a grating electrode exciting an acoustic wave and a bus bar to which the grating electrode is connected, wherein an anisotropy coefficient in a cross region where the grating electrodes of the pair of comb-shaped electrodes cross each other is positive; an anisotropy coefficient in a gap region located between a tip of the grating electrode of one of the pair of comb-shaped electrodes and the bus bar of the other is less than the anisotropy coefficient in the cross region, and an acoustic velocity of an acoustic wave propagating through the gap region is equal to or less than an acoustic velocity of an acoustic wave propagating through the cross region at an antiresonant frequency.

Acoustic wave resonator, filter, and duplexer

An acoustic wave device includes: a Y-cut X-propagation lithium tantalate substrate having a cut angle of 20&#xb0; or more and 48&#xb0; or less; and a grating electrode that is composed of one or more metal films laminated on the substrate, and excites an acoustic wave, wherein when a density of each metal film in the one or more metal films is represented by &#x3c1;i, a Poisson's ratio of each metal film is represented by Pi, a film thickness of each metal film is represented by hi, a density of Cu is represented by &#x3c1;, a Poisson's ratio of Cu is represented by Pand a pitch is represented by &#x3bb;, a total value of '(hi/&#x3bb;)&#xd7;(&#x3c1;i/&#x3c1;)&#xd7;(Pi/P)' for each metal film with respect to the one or more metal films is more than 0.08.

Acoustic wave device

A surface acoustic wave device includes: comb-shaped electrodes each including electrode fingers and dummy electrode fingers; and additional films located to cover gaps between tips of the electrode fingers of one of the comb-shaped electrodes and tips of the dummy electrode fingers of the other, wherein each of the additional films overlap with at least one of the electrode fingers and the dummy electrode fingers located lateral to the corresponding gap in a first direction in which the electrode fingers extend or in a second direction intersecting with the first direction, and a distance G of the gap is 0&#x3c;G&#x2264;1.0&#x3bb; and a film thickness h of the additional films is 0&#x3c;h/&#x3bb;&#x2264;(0.146G+0.694076)&#xd7;&#x3c1;2/&#x3c1;1 where &#x3bb; is a wavelength of an acoustic wave, &#x3c1;1 is a density of a material of the additional films, and &#x3c1;2 is a density of aluminum oxide.

Surface acoustic wave device and filter

A surface acoustic wave device includes: comb electrodes that are provided on a piezoelectric substrate, respectively has a plurality of electrode fingers, a plurality of dummy electrode fingers and a bus bar, edges of the electrode fingers of one of the comb electrodes facing the dummy electrode fingers of the other; and an added film that is provided at least under the bus bar of the comb electrodes and under the electrode fingers and the dummy electrode fingers in a first region and is not provided in a crossing region where the electrode fingers of the one of the comb electrodes and the electrode fingers of the other cross each other, the first region being a region between front edges of the dummy electrodes and edges of the dummy electrodes connected to the bus bar and extending in an alignment direction of the electrode fingers.

A surface acoustic wave device includes: a pair of comb-type electrodes that are provided on a piezoelectric substrate and include electrode fingers and dummy electrode fingers, the electrode fingers of one of the pair of comb-type electrodes facing the dummy electrode fingers of the other comb-type electrode; and additional films that are provided to cover gaps between tip ends of the electrode fingers and tip ends of the dummy electrode fingers and to overlap with at least one of first through third groups in which the first and second groups respectively include the electrode fingers and the dummy electrode fingers located at opposite sides of the gaps in a first direction in which the electrode fingers extend, and the third group includes the electrode fingers located at sides of the gaps in a second direction that crosses the first direction.

Surface acoustic wave device and filter with additional covering films

A surface acoustic wave device includes: a pair of comb-like electrodes formed on a piezoelectric substrate, each of which includes electrode fingers, dummy electrode fingers and a bus bar to which the electrode fingers and the dummy electrode fingers are connected, the electrode fingers and the dummy electrode fingers of one of the pair of comb-like electrodes facing the dummy electrode fingers and the electrode fingers of the other com-like electrode, respectively; and additional films extending in the form of a strip in a first direction in which the electrode fingers are arranged side by side, each of the additional films covering at least parts of gaps defined by ends of the electrode fingers of one of the pair of comb-like electrodes and ends of the dummy electrode fingers of the other comb-like electrode.

A resonator includes: a first comb-shaped electrode including a first bus bar, first electrode fingers coupled to the first bus bar and extending in an extension direction, and first dummy electrode fingers coupled to the first bus bar; and a second comb-shaped electrode including a second bus bar, second electrode fingers coupled to the second bus bar, extending in the extension direction, and facing the first dummy electrode fingers through first gaps, and second dummy electrode fingers coupled to the second bus bar and facing the first electrode fingers through second gaps, wherein 0.5&#x3bb;&#x2266;&#x394;D where &#x394;D represents a distance in the extension direction between at least two gaps that are at least adjoining two of the first gaps or/and at least adjoining two of the second gaps, and &#x3bb; represents pitches of the first electrode finger and the second electrode finger.

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Tokyo, Japan

Hidetaro Nakazawa