Fujitsu Corporation

Hidetake Suzuki

Masanori Ishii

Yoji Suzuki

Yuuichi Hasegawa

Fuminori Sakai

Yoshiro Nakayama

A method for fabricating a semiconductor device includes the steps of forming a plurality of semiconductor chips on a semiconductor substrate, forming a connection part such that the connection part connects the semiconductor chips with other across an dicing line, bonding the semiconductor substrate upon a support substrate, removing the dicing region while maintaining the semiconductor chips in a state such that the semiconductor chips are bonded upon the support substrate, detaching the plurality of semiconductor chips from the support substrate while maintaining an alignment between the semiconductor chips, and separating the semiconductor chips from each other by eliminating the connection part.

Semiconductor device having a fragment of a connection part provided on at least one lateral edge for mechanically connecting to adjacent semiconductor chips

A method for fabricating a semiconductor device including the steps of forming a plurality of semiconductor chips on a semiconductor substrate, forming a connection part such that the connection part connects the semiconductor chips with each other across a dicing line, bonding the semiconductor substrate upon a support substrate, removing the dicing region while maintaining the semiconductor chips in a state such that the semiconductor chips are bonded upon the support substrate, detaching the plurality of semiconductor chips from the support substrate while maintaining an alignment between the semiconductor chips, and separating the semiconductor chips from each other by eliminating the connection part.

Semiconductor device and method of making

A phase inverter includes first, second, third and fourth terminals, a first coupling circuit coupled between the first and second terminals, a second coupling circuit coupled between the second and third terminals, a third coupling circuit coupled between the third and fourth terminals, and a fourth coupling circuit coupled between the first and fourth terminals. The first to fourth terminals and the first to fourth coupling circuits are arranged into a ring. The first coupling circuit is of a type different from a type of the fourth coupling circuit. The second and third coupling circuits are identical in type. Two output signals having a phase difference of 180.degree. are drawn from the second and fourth terminal when an input terminal is applied to the first terminal, and an output signal is drawn from the first terminal when two input signals having a phase difference of 180.degree. are applied to the second and fourth terminals. A push-pull amplifier using two phase inverter each having the above-mentioned configuration is also provided.

Phase inverter and push-pull amplifier using the same

A method of producing a compound semiconductor device comprises the steps of: forming a recess portion on a compound semiconductor substrate; forming an ion penetrating mask on the recess portion in such a manner that the surfaces of the compound semiconductor substrate and the ion penetrating mask are level; forming an active layer having a substantially uniform depth is the compound semiconductor by implanting impurity ions into the entire exposed surface and, removing the ion penetrating mask and forming a gate electrode at the recess portion.

Method of producing recessed gate of MESFET in compound semiconductor

A compact connection structure between two electrodes made of two types of metals, i.e., metals which respectively make Schottky and ohmic contact with a semiconductor, is provided by using a high melting point metal or silicide thereof which makes Schottky contact with the semiconductor as one electrode metal. The two types of electrodes can be brought into direct contact with each other, enabling elimination of through hole connections between them and therefore increased semiconductor device density.

Growing community of inventors

Tokyo, Japan

Hidetake Suzuki