Hitachi Chemical Company, Ltd.

Hitachi, Ltd.

Hidetaka Sato

Hiroshi Suzuki

Daisuke Makino

Shun-ichiro Uchimura

Tohru Kikuchi

Shunichiro Uchimura

Hiroshi Nishizawa

Kenji Suzuki

Yoshiyuki Mukoyama

Isao Uchigasaki

Takayuki Saito

Shigeru Hayashida

Iwao Maekawa

Masato Taya

Mitsumasa Kojima

Toshiyuki Fujita

Chiaki Yamagishi

Shigeo Nara

Nori Sasaki

Noboru Monma

Hiroyoshi Sekine

Tutomu Sarudate

Polyimides satisfying the requirements (a), (b) and (c) among the requirements described below, polyimides satisfying the requirements (b), (c) and (d), and polyimides satisfying the requirements (a), (b), (c) and (d) are excellent in transparency, isotropy and resistance to cracking (no crack is formed in the formation of a multilayer film, so that the multilayer formation is easy, namely, the polyimides are good in processability) and can give optical parts excellent in optical characteristics:

Polyimides and optical parts obtained by using the same

A multilayer wiring structure produced by using a special poly(amic acid) ester oligomer for making an interlayer insulating film has an almost flattened surface without suffering from level differences of underlying wiring patterns.

Process for producing multilayer wiring structure

An integrated circuit device wherein layer insulation is attained by at least one of (i) an insulator layer interposed between two adjacent conductor layers, and (ii) a surface protecting layer fixedly covering the surface of the semiconductor chip, each of the insulator layer and the surface protecting layer being made of a heat-resistant resin obtainable by heating a heat-resistant resin paste. Said paste consists essentially of a first organic liquid, a second organic liquid, a heat-resistant resin (B) which is soluble in an organic liquid mixture consisting of the first organic liquid and the second organic liquid, and fine particles of a heat-resistant resin (C) which is soluble in the first organic liquid but insoluble in the second organic liquid. The first organic liquid, the second organic liquid and the heat-resistant resin (B) are brought into a solution in which the fine particles of a heat-resistant resin (C) are dispersed.

Integrated circuit device produced with a resin layer produced from a

Insulating resin composition for a semiconductor device having a multilevel interconnection layers formed by the resin and having a superior planarizing capability relative to a lower interconnection layer is provided, which resin being a cured product of a polyamic acid ester oligomer obtained by reacting an aromatic diamine and/or a diaminosiloxane with an aromatic tetracarboxylic acid ester obtained by reacting an aromatic tetracarboxylic acid dianhydride with an alcohol or alcohol derivative.

Insulating resin composition and semiconductor device using the same

A heat-resistant resin paste consisting essentially of a first organic liquid (A.sub.1), a second organic liquid (A.sub.2), a heat-resistant resin (B) which is soluble in an organic liquid mixture consisting essentially of the first organic liquid (A.sub.1) and the second organic liquid (A.sub.2), and fine particles of a heat-resistant resin (C) which are soluble in the first organic liquid (A.sub.1), but insoluble in the second organic liquid (A.sub.2). The first organic liquid (A.sub.1), the second organic liquid (A.sub.2), and the heat-resistant resin (B) are brought into a solution in which the fine particles of a heat-resistant resin (C) are dispersed. The heat-resistant resin paste may be suitably used for screen process printing to provide integrated circuit devices with insulator layers or surface protecting layers. The heat-resistant resin paste is suitable for forming insulator layers or surface protecting layers in integrated circuit devices by employing screen process printing.

Heat-resistant resin paste and integrated circuit device produced by

A polyimide obtained from a polyamide-acid or polyamide-acid ester prepared by reacting dicyclohexyl-3,4,3', 4'-tetracarboxylic acid or dinanhydride with a diamine is excellent in transparency, heat resistance and mechanical properties, said polyimide being able to be obtained at a lower temperature, and particularly suitable for an orientation film used in a liquid crystal display device.

Dicyclohexyl-3,4,3',4'-tetracarboxylic acid or dianhydride thereof and

A polyimide precursor resin composition comprising (a) a poly(amic acid) containing siloxane linkages, (b) an aminosilane, and (c) a solvent for both the components (a) and (b), can form a polyimide film excellent in adhesiveness and heat resistance and is suitable for producing a semiconductor device having high reliability.

Polyimide precursor resin composition and semiconductor device using the

There are disclosed a composition for protective coating material, preferably for a protective coating material of a semiconductor device which is constituted of principal elements of a semiconductor memory element, an encapsulating layer containing an inorganic material for encapsulating said element and a layer of a cured protective coating material arranged between said memory element and said encapsulating layer, which is composed of a polyamide acid obtained by the reaction of a diaminosiloxane, an organic diamine containing no silicon and an organic tetrabasic acid dianhydride, and a semiconductor device having a layer of a cured protective coating material composed of a polyimide-silicone copolymer obtained by dehydrating ring closure of the above-mentioned polyamide acid.

Composition for protective coating material

A composition of materials comprising a polyamide acid-silicone intermediate obtained by reacting (a) a diaminoamide compound of the formula: ##STR1## wherein Ar and Y are as defined in the specification, (b) a diaminosiloxane, (c) a diamine, and (d) an aromatic tetracarboxylic acid dianhydride can form a protective film used in a semiconductor device excellent in adhesive properties, heat resistance and preventing soft errors due to .alpha.-rays.

Compositions of materials for forming protective film in semiconductor

A polyimide-isoindroquinazolinedione-silicone copolymer resin produced by reacting (a) a diaminoamide, (b) a diaminosiloxane, (c) a diamine, and (d) a tetracarboxylic acid dianhydride to give a polyamide acid-silicone intermediate, which is then subjected to dehydration and ring closure, is excellent particularly in adhesiveness, moisture resistance, wear resistance and heat resistance. The polyamide acid-silicone intermediate is stable in the form of a varnish and usuable commercially as a raw material for the polyimide-isoindroquinazolinedione-silicone copolymer resin.

Intermediate, copolymer resin and production thereof

A resin composition comprising (A) 25 to 45 parts by weight of an unsaturated polyester having special structure, (B) 40 to 60 parts by weight of polymerizable monomer such as styrene, and (C) 4.5 to 15 parts by weight of a polystyrene, has low shrink properties and excellent electrical properties when molded, particularly by casting.

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Hitachi, Japan

Hidetaka Sato