Sanyo Electric Co., Ltd.

Renesas Technology Corp.

Hidetaka Nishimura

Takahiko Ogo

Yasunori Inoue

Hideki Mizuhara

Shigeru Kobayashi

Naoteru Matsubara

Yasushi Ohyama

Hiroyuki Akimori

A solid state imaging device and a method for manufacturing the same that prevents the reproduction characteristic of an optical image from being affected by diagonal light on a semiconductor substrate surface. A CCD image sensor includes a semiconductor substrate, light receiving pixels formed on the semiconductor substrate, and a color filter arranged above the light receiving pixels and including filters transmitting light having different wavelengths. Dummy wires, which shield light that passes through the color filter and which are electrically isolated from clock wires, are arranged at locations corresponding to boundaries of regions, each defining one of the light receiving pixels.

Solid state imaging device and method for manufacturing solid state imaging device

A mass-production transfer support system has a mass-production transfer source managing computer for managing information generated in a trial-production process of a semiconductor device and a mass-production transfer destination managing computer for managing a mass-production process of the semiconductor device. The mass-production transfer source managing computer comprises: quality/recipe information input accepting means; quality/recipe information sending means; apparatus-difference correction information input accepting means for accepting an input of apparatus-difference correction information for correcting a difference in the quality of the semiconductor device associated with an apparatus-difference between semiconductor manufacturing apparatuses; apparatus-difference correction information storing means; and apparatus-difference correction information providing means for storing the apparatus-difference correction information in a database accessible by the mass-production transfer destination managing computer.

Mass-production transfer support system and semiconductor manufacturing system

A method of fabricating a semiconductor device capable of attaining an excellent embedding characteristic also when an opening has a small diameter is obtained. According to this method of fabricating a semiconductor device, an interlayer dielectric film having an opening is formed. A first conductive member is formed in the opening by sputtering. In advance of formation of the first conductive member, first heat treatment is performed at a temperature capable of reducing the quantity of moisture and hydroxyl groups in the interlayer dielectric film. Thus, the interlayer dielectric film has a small quantity of moisture and hydroxyl groups when the first conductive member is embedded in the opening, whereby the embedding characteristic of the first conductive member is improved. Consequently, electric characteristics of a contact part can be improved also when the opening has a small diameter.

Method of fabricating semiconductor device

Growing community of inventors

Gifu, Japan

Hidetaka Nishimura