Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Kabushiki Kaisha Tokuda Seisakusho

Tokuda Seisakusho, Ltd.

Hidetaka Jyo

Reiji Nishikawa

Noboru Suzuki

Munenori Iwami

Shigeki Hazano

Yoshinori Ito

Shozo Satoyama

Reiichiro Sensui

Masahiro Shibagaki

An apparatus for producing semiconductor devices in which a plurality of treatment chambers such as a load chamber, an etching chamber, a sputtering chamber, an ion implantation chamber, a CVD chamber, an unload chamber, a transfer chamber, a heat-treatment chamber, a rinsing chamber and the like, are connected in series preferably in the form of U for effecting various treatments of semiconductor wafers. Wafer conveyor and transfer means are provided to move a wafer through the treatment chambers in which the wafer is normally sequentially processed and these conveyor and transfer means are reversible so that a wafer which has been moved into a predetermined treatment chamber can be returned to the inlet of the apparatus, whereby the quantity of dust attached to the wafer in each treatment chamber can be easily and positively detected. In the heat-treatment chamber, the hot air is discharged against the upper surface of the wafer on the belt conveyor while a vertically movable heating plate is brought into contact with the undersurface of the wafer so that the uniform heat-treatment can be accomplished within a short period of time. Furthermore, the inner surfaces of the etching chamber or the like are lined with detachable linings made of, for instance, aluminum so that maintenance is facilitated.

Apparatus for producing semiconductor devices

There is disclosed a magnetron sputtering apparatus including a sputtering chamber, a substrate and target disposed within the sputtering chamber to form a desired space therebetween, device for applying a voltage between the substrate and target, and device for producing a magnetic field; and the apparatus comprises the magnetic field-producing device adapted to excite a magnetic field so that the direction of the magnetic field may be inverted on the magnetic symmetry axis within the space. The magnetron sputtering apparatus of the present invention can form metal films having no crack without heating of the substrate and also form a magnetic recording film layer having an increased coercive force perpendicular to the surface of the film.

Magnetron sputtering apparatus

Growing community of inventors

Sagamihara, Japan

Hidetaka Jyo