Kabushiki Kaisha Toshiba

Mitsubishi Heavy Industries Limited

Hidetaka Hattori

Masakazu Yamaguchi

Noriya Hayashi

Hideki Horizono

Akio Nakagawa

Tomoko Matsudai

Tadashi Yazaki

Seiji Kobayashi

Takaaki Sato

Yuji Maruyama

Junko Watanabe

Naoaki Fujiwara

Masayuki Kanemasu

Mitsuyoshi Uematsu

Shigeyuki Matsubara

Akihisa Watanabe

Takahito Shimomukai

Susumu Ryuuou

Kunihiko Shinoda

Hirotoshi Hujigaki

A joint member is formed of a composite including reinforcement fibers and resin. The joint member is configured to be joined with another joint member to form a joint structure capable of enduring a tensile load in a load direction in which the joint member and the other joint member are separated from each other at a joined portion of the joint structure in a longitudinal direction of the joint member. The joint member includes a main body part and a joint part connected with the main body part at an end part of the main body part in the longitudinal direction of the joint member. The joint part has an orientation pattern having anisotropy such that fiber directions of the reinforcement fibers included in the joint part include a fiber direction different from the longitudinal direction of the joint member.

Joint member of composite and joint structure

A repair device is a device configured to repair a plate-shaped composite material formed by laminating fiber-reinforced resin sheets. The repair device includes a main body portion that covers a portion to be repaired that is formed in an end surface configured to connect plate surfaces of the composite material so as to be recessed from the end surface such that a closed space is formed between the end surface and the main body portion, a securing portion configured to secure the main body portion to the composite material, and a resin supply portion configured to inject a resin into the closed space with a pressure. The main body portion is formed of a member with rigidity that is not deformed due to the pressure from the resin supply portion.

Repair device and composite material repair method

In an artificial defect materialof an FRP structure, a heat-resistant high-linear-expansion materialarranged between the layers thermally expands in case of high-temperature shaping of the FRP structure, so that a predetermined shape is shaped between a plurality of layers of the fiber reinforcing base materialand the materialthermally shrinks at the room temperature after the shaping, so that a space is formed due to the shrinkage difference from the fiber reinforcing base materials. The materialhas a linear expansion coefficient larger than that of the FRP structure by a predetermined value or more, and has the shape keeping property and the heat resistance to endure the shaping temperature.

Artificial defect material and manufacturing method of FRP structure

A method of producing a composite material includes preparing at least one molded product raw material by primary curing; preparing an assembled body by assembling the primarily cured molded product raw material with another molded product raw material; and integrally forming the molded product raw materials by heating the assembled body to a temperature equivalent to or higher than a glass transition point of the primarily cured molded product raw material to cause a phase of the at least one molded product raw material to transition to a rubberized state, by allowing an adhesive adjacent to the molded product raw material or the other molded product raw material adjacent to the molded product raw material to coexist with the molded product raw material in the rubberized state, and by secondarily curing the primarily cured at least one molded product raw material.

Method of producing composite material

A fabrication method and a fabrication device capable of fabricating medium-scale mass production parts. The method of fabricating a composite material hollow part includes: holding a tool on a frame using a holding section that maintains a gap between the tool and the frame, placing a prepreg on the tool, covering the tool and the prepreg using a highly stretchable sheet, securing the highly stretchable sheet and the frame with a securing jig so that tension is applied to the highly stretchable sheet from the top portion of the prepreg where the highly stretchable sheet contacts the prepreg at the highly stretchable sheet and the outer periphery of both the tool and the prepreg to the edges of the highly stretchable sheet, thereby forming an enclosed space that houses the tool and the prepreg, and subsequently evacuating the inside of the enclosed space to wrap the prepreg around the tool.

Fabrication method and fabrication device for composite material hollow part

A method for manufacturing a resin-based composite material includes: a stage in which prepregs are stacked on a jig; a stage in which the stacked prepregs and the jig are covered and pressurized heat treatment is applied thereto to form a first semi-molded article and a second semi-molded article; a stage in which board thicknesses of the first semi-molded article and the second semi-molded article are measured, a stage in which the number of additional plies is determined based on the measured board thicknesses, a desired board thickness of the resin-based composite material, and physical properties of the additional plies; and a stage in which a layered product is formed by stacking the predetermined number of additional plies between the first semi-molded article and the second semi-molded article, the layered product and the jig are covered with a bagging material, and pressurized heat treatment is applied thereto.

Method for manufacturing resin-based composite material

A nondestructive inspection apparatus according to the present invention has a transmission-side probe configured to emit a first ultrasonic wave toward a test-target fluid, a plate through which a Lamb wave generated by the first ultrasonic wave is propagated when the first ultrasonic wave is propagated, and a reception-side probe configured to measure intensity of a second ultrasonic wave which is emitted from the plate and propagates through the test-target fluid. At this time, the nondestructive inspection apparatus can inspect the test-target fluid without bringing the transmission-side probe configured to emit the first ultrasonic wave and the reception-side probe configured to measure the second ultrasonic wave into contact with the test-target fluid.

Apparatus and method for nondestructive inspection

A p type base layer is formed in one surface region of an n type base layer. An n type emitter layer is formed in a surface region of the p type base layer. An emitter electrode is formed on the n type emitter layer and the p type base layer. A trench is formed in the n type emitter layer such that extends through the p type base layer to the n type base layer. A trench gate electrode is formed in the trench. The n type base layer has such a concentration gradient continuously changing in a thickness direction thereof that its portion in contact with the p type base layer has a lower concentration than its portion in contact with the p type collector layer, with the p type collector layer having a thickness of 1 &#x3bc;m or less.

Semiconductor power device

In a p-type base layer of a trench IGBT comprising a p-type collector layer, an n-type base layer formed on the p-type collector layer, the p-type base layer formed on the n-type base layer, and an n-type emitter layer formed on the surface of the p-type base layer, the point of the highest impurity concentration is located closer to the n-type base layer than the junction with the emitter layer. In other words, the pinch-off of the channel is generated in the position closer to the n-type base layer than to the junction between the p-type base layer and the n-type emitter layer.

Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same

A semiconductor element including a first base layer of a first conductivity type; a second base layer of a second conductivity type formed selectively in one surface region of the first base layer; an emitter layer or a source layer of the first conductivity type formed selectively in a surface region of the second base layer; and a gate electrode formed on that portion of the second base layer which is positioned between the emitter layer or source layer and the first base layer with a gate insulating film interposed between the gate electrode and the second base layer. A channel region is formed in contact with the gate insulating film to permit a carrier to migrate between the emitter layer or source layer and the first base layer. The channel region has an impurity concentration profile such that the impurity concentration is substantially constant along the gate insulating film and in the direction in which the emitter layer or source layer, the second base layer and the first base layer are formed.

A power semiconductor device includes a base layer of first conductivity. A base layer of second conductivity is selectively formed on one surface of the base layer of first conductivity. An emitter layer or source layer of first conductivity is selectively formed on the surface of the base layer of second conductivity. A collector layer or drain layer is selectively formed on the other surface of the base layer of first conductivity or selectively formed on the one surface thereof. A gate electrode is formed on first and second gate insulating films which are formed on part of the base layer of second conductivity which lies between the emitter layer or source layer of first conductivity and the base layer of first conductivity. The capacitance of a capacitor formed of the second gate insulating film is different from that of a capacitor formed of the first gate insulating film.

Power semiconductor device and manufacturing method thereof

A negative buffer layer and a positive collector layer are formed on a side of one surface of a semiconductor substrate. The positive collector layer is set to have a low dose amount and set shallow so that a low injection efficiency emitter structure is realized. Break down voltage of a power device is controlled by a thickness of a drift layer. A positive base layer, a negative emitter layer and a positive base contact layer are formed on a side of the other surface of the semiconductor substrate. A negative low resistant layer reduces a junction FET effect. An emitter electrode comes into contact with the negative emitter layer and the positive base contact layer. A collector electrode comes into contact with the positive collector layer. A gate electrode is formed on a gate insulating film above a channel region on a surface portion of the positive base layer.

Punch through type power device

Semiconductor device and method of manufacturing the same

A p type base layer is formed in one surface region of an n type base layer. An n type emitter layer is formed in a surface region of the p type base layer. An emitter electrode is formed on the n type emitter layer and the p type base layer. A trench is formed in the n type emitter layer such that extends through the p type base layer to the n type base layer. A trench gate electrode is formed in the trench. The n type base layer has such a concentration gradient continuously changing in a thickness direction thereof that its portion in contact with the p type base layer has a lower concentration than its portion in contact with the p type collector layer, with the p type collector layer having a thickness of 1 &mgr;m or less.

Growing community of inventors

Yokohama, Japan

Hidetaka Hattori