Matsushita Electronics Corporation

Hidetaka Hashimoto

Kaname Motoyoshi

Katsushi Tara

Susumu Koike

Toshiharu Tambo

Shotaro Umebachi

This invention relates to a method of manufacturing an Arsenic-including compound semiconductor device comprising the steps of forming an ion implantation layer in a specified region of an As compound semiconductor wafer, forming an As layer on the surface of the wafer, and annealing the water. In this manner, As evaporation in the ion implantation layer by annealing heat may be prevented. Accordingly, sufficient substitution of the implanted ions and the ions other than As ions composing the As compound may be achieved, thereby preventing lowering of the electrical activation of the As compound semiconductor device. In addition, the electrical activation becomes uniform over the whole area of the water.

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Kyoto, Japan

Hidetaka Hashimoto