Freescale Semiconductor,inc.

Motorola Corporation

Hidetaka Fukazawa

Konosuke Taki

Satoshi Sekine

Qadeer Ahmad Khan

Tushar S Nandurkar

Shintaroh Murakami

Akihiro Takahashi

Akihiro Zemba

Takeo Anazawa

Kotaro Okada

A method for measuring an on resistance in an H-bridge including first and second transistors connected to a first output terminal, third and fourth transistors connected to a second output terminal, and a measurement switch connected to the first and second output terminals. The first and third transistors are connected to a first power supply terminal. The second and fourth transistors are connected to a second power supply terminal. The method includes supplying the first transistor with measurement current during a first period, measuring a first voltage at the first power supply terminal via the third transistor using the second output terminal during the first period, measuring a second voltage at the first output terminal via the measurement switch using the second output terminal during the first period, and determining the on resistance of the first transistor based on the measurement current, first voltage, and second voltage.

Method for testing H-bridge

An authentication system for reducing the power consumed during an authentication process and shortening the authentication time includes an electrode plate. The electrode plate has a unique shape that defines an authentication key. An electric field sensor detects capacitance corresponding to the shape of the electrode plate to generate a detection signal. A signal monitor compares the detection signal of the electric field sensor with a preset signal and generates a determination signal indicating the comparison result.

Authentication system including electric field sensor

A trimming circuit, an electronic circuit, and a trimming control system for reducing the risk of failures when perform trimming and for ensuring that a desired device is readily manufactured. A selector, a resistor, and a fuse are connected in series between a power supply and ground. A probe pad for performing probe trimming is connected immediately above the fuse. The selector includes two back-to-back connected n-type MOS transistors. Each n-type MOS transistor has a gate terminal connected to a selector control circuit. A trim sense circuit is arranged at a power supply side of the fuse. The trim sense circuit detects fuse breakage and changes the operation of an element associated with each trimming circuit TC based on the detection.

Trimming circuit, electronic circuit, and trimming control system

An H-bridge drive circuit for reducing switching noises while preventing shoot-through current from flowing in the H-bridge circuit. The H-bridge drive circuit includes an H-bridge circuit for driving a load with a first power supply and a lower voltage second power supply. The H-bridge circuit includes first to fourth transistors. The first and third transistors are connected to the first power supply. The second transistor is connected between the first transistor and the second power supply, and the fourth transistor is connected between the third transistor and the second power supply. The load is connected to a node between the first and the second transistors and a node between the third and the fourth transistors. A control circuit switches the activation and inactivation of the first to fourth transistors so as to maintain at least either one of the second and fourth transistor in an activated state.

Method and circuit for driving H-bridge that reduces switching noise

A charge pump circuit for a high side drive circuit and a driver driving voltage circuit that stably output a voltage when input voltage is low. The charge pump circuit includes first and second transistors, first and second capacitors, and first to third diodes. The first capacitor has a high voltage side, connected to a load driving power supply voltage via the first diode, and a low voltage side, connected to the load driving power supply voltage via the first transistor or grounded via the second transistor driven in synchronization with the first transistor. The high voltage side is supplied, via the third diode, with a low side drive voltage that is as an output voltage of a low side charge pump, and functions to output high side drive voltage to a high side pre-driver circuit via the second diode.

Charge pump circuit for high side drive circuit and driver driving voltage circuit

A discharge device and DC power supply system for preventing erroneous operation of a series regulator. The discharge circuit includes a voltage comparison circuit for comparing input power supply voltage and output power supply voltage of the series regulator. The voltage comparison circuit includes first and second transistors. The collector terminal of the second transistor is connected to the drain terminal of a fourth transistor and to the gate terminal of a fifth transistor. The fifth transistor has a drain terminal, which is connected to the output terminal of the series regulator, and a source terminal, which is grounded. Third and fourth transistors operate when the input power supply voltage is greater than the activation voltage. The drain terminal of the fourth transistor is grounded via a resistor, and the voltage of the fourth transistor is supplied to the gate terminal of the fifth transistor.

Discharge device and DC power supply system

A predriver circuit that is capable of reducing the size of a drive transistor while preventing a drive transistor's gate from being destroyed, thereby reducing power consumption. The predriver circuit includes a current mirror circuit, which has a pair of transistors that are connected to a predriver power supply voltage; a level shifter circuit, which is connected to a first transistor via a self-bias circuit; and a discharge transistor, which is connected to a second transistor. A terminal connecting the second transistor to the discharge transistor is connected to a top gate of a high-side MOS transistor for a half-bridge connected drive circuit.

Predriver circuit

An output driver that allows for static protection during generation of static discharge. The output driver includes a static protection circuit located between a predrive stage and a power drive stage.

Output driver for use in semiconductor integrated circuit

Propagation delay times of an input signal from an input terminal to respective gates are equalized and accelerated with a power MOS transistor that includes a plurality of transistor blocks. The transistor blocks are formed by sources being connected to each other by a first electric conductive layer (8.sub.2, 8.sub.4, 8.sub.6 and 10), drains being connected to each other by a second electric conductive layer (8.sub.1, 8.sub.3, 8.sub.5 and 9), and gates (6) consisting of a continuous semiconductor layer. The transistor has a third electric conductive layer (11) being connected to a gate terminal Gin and laminated on the gates. The third electric conductive layer laminated on the gates functions to equalize and accelerate propagation delay times of an input signal from an input terminal to the respective gates. By extending that conductive layer to near the center of a principal plane of the gate, the delay time of a gate input signal to the transistor block located at the center of the semiconductor chip can be reduced substantially.

Power MOS transistor

A static protection circuit for a semiconductor integrated circuit device which provides static protection for an integrated circuit driven on multiple different power supply voltages is provided. The static protection circuit comprises a transistor having its two controlled terminals connected to each of the power supply lines and a GND line, respectively, and its control line connected to one of said controlled terminals; and a transistor having its controlled terminals connected to each of said power supply lines and its control terminal to which a nonconductive voltage is applied.

Growing community of inventors

Miyagi, Japan

Hidetaka Fukazawa