Kabushiki Kaisha Toshiba

Sony Corporation

Other

Hideshi Miyajima

Rempei Nakata

Nobuo Hayasaka

Miyoko Shimada

Nobuhide Yamada

Keiji Fujita

Hideaki Masuda

Hideki Shibata

Yoshiaki Shimooka

Kyoichi Suguro

Haruo Okano

Mie Matsuo

Kazuhiro Tomioka

Jun-ichi Wada

Akihiro Kojima

Masahiko Hasunuma

Kei Watanabe

Kiyotaka Tabuchi

Naruhiko Kaji

Hideto Matsuyama

Motonobu Kawai

Katsuya Okumura

Ryota Katsumata

Naoki Yasuda

Hisashi Kaneko

Kazuyuki Higashi

Eiji Hayashi

Noriaki Matsunaga

Toshiaki Hasegawa

Yasushi Nakasaki

Kinji Yamada

Iwao Higashikawa

Atsushi Shiota

Akio Ui

Nobuyuki Kurashima

Takahiko Kurosawa

Tadashi Matsuno

Yukio Nishiyama

Tsutomu Shimayama

Toshiaki Idaka

Tamao Takase

Youngsoon Seo

Masaki Hotta

Disclosed is a method of manufacturing a semiconductor device which includes: providing an insulating film formed above a semiconductor substrate with a processed portion; supplying a surface of the processed portion of the insulating film with a primary reactant from a reaction of a raw material including at least a Si-containing compound; and subjecting the primary reactant to dehydration condensation to form a silicon oxide film on the surface of the processed portion.

Method of manufacturing semiconductor device

According to one aspect of the present invention, there is provided a composition for film formation, comprising a compound represented by general formula (I) or a hydrolyzed-dehydrocondensation product thereof:XRSiRSiRX&#x2003;&#x2003;(I)wherein Rand Rrepresent a hydrogen atom or a monovalent substituent; Rrepresents a divalent group having an alicyclic structure with four carbon atoms or a derivative of the divalent group; Xand Xrepresent a hydrolysable group; and m and n are an integer of from 0 to 2.

Composition for film formation, insulating film, semiconductor device, and process for producing the semiconductor device

A method of producing a semiconductor device having a plurality of wiring layers forms a first interlayer-insulating film, forms a plurality of grooves for wiring in the first interlayer-insulating film, fills metallic films in the grooves to form wirings, etches the first interlayer-insulating film with the wirings as a mask and removes the interlayer-insulating film between the wirings to provide grooves to be filled, and fills a second interlayer-insulating film made of a material of low dielectric constant in the grooves to be filled.

Semiconductor device having multiple wiring layers and method of producing the same

A method for fabricating a semiconductor device, includes forming a porous dielectric film above a substrate using a porous insulating material, forming an opening in the porous dielectric film, repairing film quality of the porous dielectric film on a surface of the opening by feeding a predetermined gas replacing a Si&#x2014;OH group to the opening, and performing pore sealing of the surface of the opening using the same predetermined gas as that used for film quality repairs after repairing the film quality.

Method for fabricating semiconductor device

A method for fabricating a semiconductor device includes forming a dielectric film containing a porogen material above a substrate; removing a portion of the porogen material contained in the dielectric film so as to make a concentration of the porogen material higher in a part on a lower side of the dielectric film than in another part on a higher side of the dielectric film; forming an opening halfway in the dielectric film from which a portion of the porogen material has been removed to leave the dielectric film below a bottom of the opening; removing or polymerizing a remainder of the porogen material contained in the dielectric film; and etching the bottom of the opening after removing or polymerizing the remainder of the porogen material.

Method for fabricating a semiconductor device

A manufacturing method of a semiconductor device, includes forming a porous organo-siloxane film containing a porogen component having carbon as a main component above a semiconductor substrate, forming an upper-side insulating film having at least one of film density and film composition different from that of the porous organo-siloxane film on the porous organo-siloxane film, and applying at least one of an electron beam and an ultraviolet ray to the porous organo-siloxane film and upper-side insulating film to cause polymerization reaction of the porogen component in the porous organo-siloxane film.

Manufacturing method of semiconductor device

The formation of an interlayer insulating film above a substrate, the formation of an insulating film of an organic material on the interlayer insulating film thereafter, and the irradiation of the insulating film of an organic material and the interlayer insulating film with electron beams, thereby curing at least the insulating film of an organic material, are proposed.

A method of manufacturing a semiconductor device bakes a first semiconductor substrate on which a sacrifice film is formed in a reaction chamber to preliminarily coat an inner wall of the reaction chamber with a component of a gas generated by the sacrifice film, and bakes a second semiconductor substrate on which a predetermined film including the same component as that of the sacrifice film is formed in the preliminarily coated reaction chamber, while irradiating electron beams on the predetermined film to change quality of the predetermined film.

Disclosed is a method for manufacturing a semiconductor device, comprising forming a low dielectric constant insulating film having a porous structure above a semiconductor substrate, forming a recess in the low dielectric constant insulating film, providing a burying insulating film above the low dielectric constant insulating film having the recess and in the recess, removing a the burying insulating film provided in the recess, thereby opening the recess, and burying conductive material in the recess, forming a conductive portion.

According to an aspect of the invention, there is provided a method for fabricating a semiconductor device. The method may include forming at least one interconnection layer having a low dielectric constant insulating film and an interconnection buried in the low dielectric constant insulating film, forming a trench or a hole extending in the interconnection layer, performing heat treatment for the interconnection layer having the trench or the hole, and burying a material in the trench or the hole.

A semiconductor device, wherein an increase of a capacity between wiring layers is suppressed, reliability of wiring and property of withstand voltage of a diffusion prevention insulation film can be improved and the wiring resistance can be maintained low, is provided by comprising an interlayer insulation film formed on a substrate, a wiring formed on a trench pattern formed on the interlayer insulation film, and a diffusion prevention insulation film formed on an upper surfaces of the interlayer insulation film including the wiring and preventing diffusion of metal from the wiring; wherein the diffusion prevention insulation film has a middle layer between a lowermost layer and an uppermost layer, wherein the lowermost layer is formed so as to contact the upper surfaces of the interlayer insulation layer including the wiring, the uppermost layer constitutes an uppermost portion of the diffusion prevention insulation film, and the middle layer has a lower relative dielectric constant than those of the lowermost layer and the uppermost layer.

Semiconductor device

A semiconductor device manufacturing method comprises forming a first insulating film including silicon, carbon, nitrogen, and hydrogen above a substrate in a first chamber, carrying the substrate into a second chamber other than the first chamber, and discharging a rare gas in the second chamber, and forming a second insulating film including silicon, carbon, oxygen, and hydrogen above the first insulating film after the discharging the rare gas.

Disclosed is a semiconductor device comprising a semiconductor substrate, a porous insulating film formed above the semiconductor substrate, the porous insulating film having a relative dielectric constant of 2.5 or less and including a first insulating material, at least a portion of pores in the porous insulating film having on the inner wall thereof a layer of a second insulating material which differs in nature from the first insulating material, and a plug and/or a wiring layer buried in the porous insulating film.

Semiconductor device fabrication method

Growing community of inventors

Yokohama, Japan

Hideshi Miyajima