Canon Kabushiki Kaisha

Conon Kabushiki Kaisha

Hideshi Kuwabara

Nobutaka Ukigaya

Tetsuo Asaba

Kenji Makino

Hiroshi Yuzurihara

Yuzo Kataoka

Yutaka Yuge

Mineo Shimotsusa

Kei Fujita

Yutaka Akino

Seiji Kamei

Yasuhiro Sekine

Shigeru Nishimura

Yasushi Kawasumi

Hidekazu Takahashi

Akira Okita

Mahito Shinohara

Shigeyuki Matsumoto

Takayuki Kimura

Tomohisa Kinugasa

Junichi Hoshi

Hidenori Watanabe

Tasuku Kaneda

Shinji Kodaira

Yuzo Kayaoka

A photoelectric conversion apparatus includes an element isolating portion that is disposed on a side of a front surface of a semiconductor layer and constituted by an insulator, and a pixel isolating portion. The pixel isolating portion includes a part that overlaps an isolating region in a normal direction. The semiconductor layer is continuous across semiconductor regions in an intermediate plane. The part is located between a semiconductor region and another semiconductor region.

Photoelectric conversion apparatus and camera

A photoelectric conversion apparatus that includes a pixel region having photoelectric conversion elements includes a semiconductor layer having first and second surfaces, and the photoelectric conversion elements are disposed between the first and second surfaces. With a virtual plane extending along the second surface between the first and second surfaces being a third plane, the pixel region includes an element isolating portion constituted by an insulator disposed closer to the first surface than the third plane, and first and second isolating portions constituted by grooves provided in the semiconductor layer to pass through the third plane. The first isolating portion overlaps the element isolating portion in a normal direction to the third plane. An end of the second isolating portion on a side on the first surface is closer to the second surface than an end of the first isolating portion on a side on the first surface is.

Photoelectric conversion apparatus, camera, and moving body

A semiconductor apparatus comprises a first semiconductor region including a first surface and a second surface, in which a semiconductor of a first conductivity type is arranged, a second semiconductor region of the first conductivity type, which is arranged between the first surface and the second surface, a third semiconductor region of a second conductivity type, which is arranged in a region between the second semiconductor region and the second surface and on a side portion of the second semiconductor region, a fourth semiconductor region of the first conductivity type, which is arranged between the first surface and the second surface; and a fifth semiconductor region of the second conductivity type, which is arranged in a region between the fourth semiconductor region and the second surface and on a side portion of the fourth semiconductor region.

Semiconductor apparatus and manufacturing method

A method for manufacturing a photoelectric conversion device comprising the steps of fixing a first substrate including a semiconductor layer provided with a photoelectric conversion element, to a second substrate, thinning the first substrate fixed to the second substrate, from the opposite side of the first substrate from the second substrate, fixing the first substrate to a third substrate provided with a semiconductor element such that the third substrate is located on the opposite side of the first substrate from the second substrate, and removing the second substrate after the step of fixing the first substrate to the third substrate.

Method for manufacturing photoelectric conversion device

A photoelectric conversion device, comprising a photoelectric conversion portion, provided in a semiconductor substrate, including a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type provided adjacent to the first semiconductor region, a third semiconductor region of the first conductivity type provided at a position away from the second semiconductor region, and a gate electrode provided between the second semiconductor region and the third semiconductor region, wherein the second semiconductor region is provided at a position away from the gate electrode, and the semiconductor substrate includes a region of a second conductivity type within a region extending from an edge of the second semiconductor region to below the gate electrode.

Photoelectric conversion device, method of manufacturing the same, and camera

A photoelectric conversion device including a photoelectric conversion element including a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type provided in contact with the first semiconductor region, a third semiconductor region of the first conductivity type provided apart from the second semiconductor region, a fourth semiconductor region of a second conductivity type provided between the second and the third semiconductor region, and a fifth semiconductor region of the first conductivity type provided apart from the third semiconductor region, wherein an impurity concentration of the third semiconductor region is lower than that of the fifth semiconductor region, and a depth of a lower-edge of the third semiconductor region from a surface of the semiconductor substrate is larger than that of a lower-edge of the fifth semiconductor region.

Photoelectric conversion device and imaging system

A photoelectric conversion apparatus includes a first line sensor unit in which a plurality of pixels are arranged in a first direction, a second line sensor unit in which a plurality of pixels are arranged in a second direction, and a third line sensor unit in which a plurality of pixels are arranged in a third direction. Each of the pixels includes a photoelectric conversion portion and a transistor. The second direction is perpendicular to the first direction and the third direction is not perpendicular to the first and the second directions. A channel of the transistor is provided in the first direction or the second direction.

Photoelectric conversion apparatus, focus detection apparatus, and image pickup system

In a photoelectric conversion device having a buried layer in a part of an anode and a cathode of a photodiode, such as a CCD having a sensor structure and a CMOS sensor, well of the same conduction type as the conduction type of the buried layer can be disposed in a peripheral circuit and the potential of each well is independently controlled. In a photoelectric conversion device which is constructed in such a manner that on the whole area of a substrate of a specific conduction type there are disposed a buried layer of a conduction type opposite to the conduction type of the substrate and an epitaxial layer of the same conduction type as the conduction type of the substrate and that well of a conduction type opposite to the conduction type of the substrate are present in a part of the epitaxial layer, buried layer for well isolation of the same conduction type as the conduction type of the substrate which have a higher concentration than the epitaxial layer is disposed between the lower part of the well and the buried layer.

Semiconductor device, photoelectric conversion device and method of manufacturing same

An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.

Method of treating active material

An ink jet head provided with discharging orifices for discharging ink, which includes a substrate having a supporting member having at least a surface having substantially insulating properties and a plurality of diodes provided on the supporting member, the diodes each comprising a polycrystalline silicon layer and at least one metal silicide layer, wherein the polycrystalline silicon layer has a p-n junction surface therein.

Growing community of inventors

Yamato, Japan

Hideshi Kuwabara